Low-temperature growth of MgB2 thin films with Tc above 38 K

Kenji Ueda, Toshiki Makimoto

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

MgB2 thin films with the Tc above 38 K have been fabricated using molecular beam epitaxy (MBE) at the growth temperature below 300°C. The Tc of 38.2 K was obtained in 1.3-μm-thick MgB 2 films formed on SiC substrates with AlN buffer layers. The T c is comparable to those of MgB2 single crystals and the highest among MgB2 films fabricated below 500°C. Increase of the film thickness of MgB2 above 1 μm was the key point to obtain high-quality films at low growth temperature.

Original languageEnglish
Pages (from-to)5738-5741
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume45
Issue number7
DOIs
Publication statusPublished - 2006 Jul 7
Externally publishedYes

Fingerprint

Growth temperature
Thin films
thin films
Buffer layers
Molecular beam epitaxy
Film thickness
film thickness
molecular beam epitaxy
buffers
Single crystals
temperature
single crystals
Substrates

Keywords

  • Film thickness
  • Low temperature growth
  • MBE
  • MgB films
  • Nitride buffer

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

@article{cb92b9dd309042eb85da91c9648c5461,
title = "Low-temperature growth of MgB2 thin films with Tc above 38 K",
abstract = "MgB2 thin films with the Tc above 38 K have been fabricated using molecular beam epitaxy (MBE) at the growth temperature below 300°C. The Tc of 38.2 K was obtained in 1.3-μm-thick MgB 2 films formed on SiC substrates with AlN buffer layers. The T c is comparable to those of MgB2 single crystals and the highest among MgB2 films fabricated below 500°C. Increase of the film thickness of MgB2 above 1 μm was the key point to obtain high-quality films at low growth temperature.",
keywords = "Film thickness, Low temperature growth, MBE, MgB films, Nitride buffer",
author = "Kenji Ueda and Toshiki Makimoto",
year = "2006",
month = "7",
day = "7",
doi = "10.1143/JJAP.45.5738",
language = "English",
volume = "45",
pages = "5738--5741",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "7",

}

TY - JOUR

T1 - Low-temperature growth of MgB2 thin films with Tc above 38 K

AU - Ueda, Kenji

AU - Makimoto, Toshiki

PY - 2006/7/7

Y1 - 2006/7/7

N2 - MgB2 thin films with the Tc above 38 K have been fabricated using molecular beam epitaxy (MBE) at the growth temperature below 300°C. The Tc of 38.2 K was obtained in 1.3-μm-thick MgB 2 films formed on SiC substrates with AlN buffer layers. The T c is comparable to those of MgB2 single crystals and the highest among MgB2 films fabricated below 500°C. Increase of the film thickness of MgB2 above 1 μm was the key point to obtain high-quality films at low growth temperature.

AB - MgB2 thin films with the Tc above 38 K have been fabricated using molecular beam epitaxy (MBE) at the growth temperature below 300°C. The Tc of 38.2 K was obtained in 1.3-μm-thick MgB 2 films formed on SiC substrates with AlN buffer layers. The T c is comparable to those of MgB2 single crystals and the highest among MgB2 films fabricated below 500°C. Increase of the film thickness of MgB2 above 1 μm was the key point to obtain high-quality films at low growth temperature.

KW - Film thickness

KW - Low temperature growth

KW - MBE

KW - MgB films

KW - Nitride buffer

UR - http://www.scopus.com/inward/record.url?scp=33746811368&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33746811368&partnerID=8YFLogxK

U2 - 10.1143/JJAP.45.5738

DO - 10.1143/JJAP.45.5738

M3 - Article

VL - 45

SP - 5738

EP - 5741

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 7

ER -