Low-temperature operation of diamond surface-channel field-effect transistors

Minoru Tachiki; Hiroaki Ishizaka; Tokishige Banno; Toshikatsu Sakai; Kwang Soup Song; Hitoshi Umezawa; Hiroshi Kawarada

Low-temperature operation of diamond surface-channel field-effect transistors

Minoru Tachiki^*, Hiroaki Ishizaka, Tokishige Banno, Toshikatsu Sakai, Kwang Soup Song, Hitoshi Umezawa, Hiroshi Kawarada

^*Corresponding author for this work

School of Fundamental Science and Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

Cryogenic operation of the diamond surface-channel field-effect transistors (FETs) is investigated. Metal-insulator-semiconductor FETs (MISFETs) are fabricated using CaF₂ as a gate insulator. MISFETs operate successfully even at 4.4 K. At low temperature, field-effect enhances the drain current, even if the surface holes become almost frozen-out. Channel mobility increases as temperature decreases to 4.4 K, which indicates the reduced phonon scattering.

Original language	English
Pages (from-to)	139-143
Number of pages	5
Journal	Materials Research Society Symposium - Proceedings
Volume	719
Publication status	Published - 2002 Jan 1
Event	Defect and Impunity Engineered Semiconductors and Devices III - San Francisco, CA, United States Duration: 2002 Apr 1 → 2002 Apr 5

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

@article{5103ecbbc93d461395d0da6a85210765,

title = "Low-temperature operation of diamond surface-channel field-effect transistors",

abstract = "Cryogenic operation of the diamond surface-channel field-effect transistors (FETs) is investigated. Metal-insulator-semiconductor FETs (MISFETs) are fabricated using CaF2 as a gate insulator. MISFETs operate successfully even at 4.4 K. At low temperature, field-effect enhances the drain current, even if the surface holes become almost frozen-out. Channel mobility increases as temperature decreases to 4.4 K, which indicates the reduced phonon scattering.",

author = "Minoru Tachiki and Hiroaki Ishizaka and Tokishige Banno and Toshikatsu Sakai and Song, {Kwang Soup} and Hitoshi Umezawa and Hiroshi Kawarada",

year = "2002",

month = jan,

day = "1",

language = "English",

volume = "719",

pages = "139--143",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Defect and Impunity Engineered Semiconductors and Devices III ; Conference date: 01-04-2002 Through 05-04-2002",

}

TY - JOUR

T1 - Low-temperature operation of diamond surface-channel field-effect transistors

AU - Tachiki, Minoru

AU - Ishizaka, Hiroaki

AU - Banno, Tokishige

AU - Sakai, Toshikatsu

AU - Song, Kwang Soup

AU - Umezawa, Hitoshi

AU - Kawarada, Hiroshi

PY - 2002/1/1

Y1 - 2002/1/1

N2 - Cryogenic operation of the diamond surface-channel field-effect transistors (FETs) is investigated. Metal-insulator-semiconductor FETs (MISFETs) are fabricated using CaF2 as a gate insulator. MISFETs operate successfully even at 4.4 K. At low temperature, field-effect enhances the drain current, even if the surface holes become almost frozen-out. Channel mobility increases as temperature decreases to 4.4 K, which indicates the reduced phonon scattering.

AB - Cryogenic operation of the diamond surface-channel field-effect transistors (FETs) is investigated. Metal-insulator-semiconductor FETs (MISFETs) are fabricated using CaF2 as a gate insulator. MISFETs operate successfully even at 4.4 K. At low temperature, field-effect enhances the drain current, even if the surface holes become almost frozen-out. Channel mobility increases as temperature decreases to 4.4 K, which indicates the reduced phonon scattering.

UR - http://www.scopus.com/inward/record.url?scp=0036450195&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036450195&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0036450195

SN - 0272-9172

VL - 719

SP - 139

EP - 143

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Defect and Impunity Engineered Semiconductors and Devices III

Y2 - 1 April 2002 through 5 April 2002

ER -

Low-temperature operation of diamond surface-channel field-effect transistors

Abstract

ASJC Scopus subject areas

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