Low-temperature operation of diamond surface-channel field-effect transistors

Minoru Tachiki, Hiroaki Ishizaka, Tokishige Banno, Toshikatsu Sakai, Kwang Soup Song, Hitoshi Umezawa, Hiroshi Kawarada

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    Cryogenic operation of the diamond surface-channel field-effect transistors (FETs) is investigated. Metal-insulator-semiconductor FETs (MISFETs) are fabricated using CaF 2 as a gate insulator. MISFETs operate successfully even at 4.4 K. At low temperature, field-effect enhances the drain current, even if the surface holes become almost frozen-out. Channel mobility increases as temperature decreases to 4.4 K, which indicates the reduced phonon scattering.

    Original languageEnglish
    Title of host publicationMaterials Research Society Symposium - Proceedings
    EditorsS Ashok, J Chevallier, N.M. Johnson, B.L. Sopori, H Okushi
    Pages139-143
    Number of pages5
    Volume719
    Publication statusPublished - 2002
    EventDefect and Impunity Engineered Semiconductors and Devices III - San Francisco, CA, United States
    Duration: 2002 Apr 12002 Apr 5

    Other

    OtherDefect and Impunity Engineered Semiconductors and Devices III
    CountryUnited States
    CitySan Francisco, CA
    Period02/4/102/4/5

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    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials

    Cite this

    Tachiki, M., Ishizaka, H., Banno, T., Sakai, T., Song, K. S., Umezawa, H., & Kawarada, H. (2002). Low-temperature operation of diamond surface-channel field-effect transistors. In S. Ashok, J. Chevallier, N. M. Johnson, B. L. Sopori, & H. Okushi (Eds.), Materials Research Society Symposium - Proceedings (Vol. 719, pp. 139-143)