Low-temperature operation of diamond surface-channel field-effect transistors

Minoru Tachiki, Hiroaki Ishizaka, Tokishige Banno, Toshikatsu Sakai, Kwang Soup Song, Hitoshi Umezawa, Hiroshi Kawarada

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    Cryogenic operation of the diamond surface-channel field-effect transistors (FETs) is investigated. Metal-insulator-semiconductor FETs (MISFETs) are fabricated using CaF 2 as a gate insulator. MISFETs operate successfully even at 4.4 K. At low temperature, field-effect enhances the drain current, even if the surface holes become almost frozen-out. Channel mobility increases as temperature decreases to 4.4 K, which indicates the reduced phonon scattering.

    Original languageEnglish
    Title of host publicationMaterials Research Society Symposium - Proceedings
    EditorsS Ashok, J Chevallier, N.M. Johnson, B.L. Sopori, H Okushi
    Pages139-143
    Number of pages5
    Volume719
    Publication statusPublished - 2002
    EventDefect and Impunity Engineered Semiconductors and Devices III - San Francisco, CA, United States
    Duration: 2002 Apr 12002 Apr 5

    Other

    OtherDefect and Impunity Engineered Semiconductors and Devices III
    CountryUnited States
    CitySan Francisco, CA
    Period02/4/102/4/5

    Fingerprint

    Low temperature operations
    Diamond
    Field effect transistors
    Diamonds
    MISFET devices
    Phonon scattering
    Drain current
    Cryogenics
    Temperature distribution
    Metals
    Semiconductor materials
    Temperature

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials

    Cite this

    Tachiki, M., Ishizaka, H., Banno, T., Sakai, T., Song, K. S., Umezawa, H., & Kawarada, H. (2002). Low-temperature operation of diamond surface-channel field-effect transistors. In S. Ashok, J. Chevallier, N. M. Johnson, B. L. Sopori, & H. Okushi (Eds.), Materials Research Society Symposium - Proceedings (Vol. 719, pp. 139-143)

    Low-temperature operation of diamond surface-channel field-effect transistors. / Tachiki, Minoru; Ishizaka, Hiroaki; Banno, Tokishige; Sakai, Toshikatsu; Song, Kwang Soup; Umezawa, Hitoshi; Kawarada, Hiroshi.

    Materials Research Society Symposium - Proceedings. ed. / S Ashok; J Chevallier; N.M. Johnson; B.L. Sopori; H Okushi. Vol. 719 2002. p. 139-143.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Tachiki, M, Ishizaka, H, Banno, T, Sakai, T, Song, KS, Umezawa, H & Kawarada, H 2002, Low-temperature operation of diamond surface-channel field-effect transistors. in S Ashok, J Chevallier, NM Johnson, BL Sopori & H Okushi (eds), Materials Research Society Symposium - Proceedings. vol. 719, pp. 139-143, Defect and Impunity Engineered Semiconductors and Devices III, San Francisco, CA, United States, 02/4/1.
    Tachiki M, Ishizaka H, Banno T, Sakai T, Song KS, Umezawa H et al. Low-temperature operation of diamond surface-channel field-effect transistors. In Ashok S, Chevallier J, Johnson NM, Sopori BL, Okushi H, editors, Materials Research Society Symposium - Proceedings. Vol. 719. 2002. p. 139-143
    Tachiki, Minoru ; Ishizaka, Hiroaki ; Banno, Tokishige ; Sakai, Toshikatsu ; Song, Kwang Soup ; Umezawa, Hitoshi ; Kawarada, Hiroshi. / Low-temperature operation of diamond surface-channel field-effect transistors. Materials Research Society Symposium - Proceedings. editor / S Ashok ; J Chevallier ; N.M. Johnson ; B.L. Sopori ; H Okushi. Vol. 719 2002. pp. 139-143
    @inproceedings{5103ecbbc93d461395d0da6a85210765,
    title = "Low-temperature operation of diamond surface-channel field-effect transistors",
    abstract = "Cryogenic operation of the diamond surface-channel field-effect transistors (FETs) is investigated. Metal-insulator-semiconductor FETs (MISFETs) are fabricated using CaF 2 as a gate insulator. MISFETs operate successfully even at 4.4 K. At low temperature, field-effect enhances the drain current, even if the surface holes become almost frozen-out. Channel mobility increases as temperature decreases to 4.4 K, which indicates the reduced phonon scattering.",
    author = "Minoru Tachiki and Hiroaki Ishizaka and Tokishige Banno and Toshikatsu Sakai and Song, {Kwang Soup} and Hitoshi Umezawa and Hiroshi Kawarada",
    year = "2002",
    language = "English",
    volume = "719",
    pages = "139--143",
    editor = "S Ashok and J Chevallier and N.M. Johnson and B.L. Sopori and H Okushi",
    booktitle = "Materials Research Society Symposium - Proceedings",

    }

    TY - GEN

    T1 - Low-temperature operation of diamond surface-channel field-effect transistors

    AU - Tachiki, Minoru

    AU - Ishizaka, Hiroaki

    AU - Banno, Tokishige

    AU - Sakai, Toshikatsu

    AU - Song, Kwang Soup

    AU - Umezawa, Hitoshi

    AU - Kawarada, Hiroshi

    PY - 2002

    Y1 - 2002

    N2 - Cryogenic operation of the diamond surface-channel field-effect transistors (FETs) is investigated. Metal-insulator-semiconductor FETs (MISFETs) are fabricated using CaF 2 as a gate insulator. MISFETs operate successfully even at 4.4 K. At low temperature, field-effect enhances the drain current, even if the surface holes become almost frozen-out. Channel mobility increases as temperature decreases to 4.4 K, which indicates the reduced phonon scattering.

    AB - Cryogenic operation of the diamond surface-channel field-effect transistors (FETs) is investigated. Metal-insulator-semiconductor FETs (MISFETs) are fabricated using CaF 2 as a gate insulator. MISFETs operate successfully even at 4.4 K. At low temperature, field-effect enhances the drain current, even if the surface holes become almost frozen-out. Channel mobility increases as temperature decreases to 4.4 K, which indicates the reduced phonon scattering.

    UR - http://www.scopus.com/inward/record.url?scp=0036450195&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=0036450195&partnerID=8YFLogxK

    M3 - Conference contribution

    AN - SCOPUS:0036450195

    VL - 719

    SP - 139

    EP - 143

    BT - Materials Research Society Symposium - Proceedings

    A2 - Ashok, S

    A2 - Chevallier, J

    A2 - Johnson, N.M.

    A2 - Sopori, B.L.

    A2 - Okushi, H

    ER -