Low-temperature operation of diamond surface-channel field-effect transistors

Minoru Tachiki, Hiroaki Ishizaka, Tokishige Banno, Toshikatsu Sakai, Kwang Soup Song, Hitoshi Umezawa, Hiroshi Kawarada

Research output: Contribution to journalConference article

Abstract

Cryogenic operation of the diamond surface-channel field-effect transistors (FETs) is investigated. Metal-insulator-semiconductor FETs (MISFETs) are fabricated using CaF2 as a gate insulator. MISFETs operate successfully even at 4.4 K. At low temperature, field-effect enhances the drain current, even if the surface holes become almost frozen-out. Channel mobility increases as temperature decreases to 4.4 K, which indicates the reduced phonon scattering.

Original languageEnglish
Pages (from-to)139-143
Number of pages5
JournalMaterials Research Society Symposium - Proceedings
Volume719
Publication statusPublished - 2002 Jan 1
EventDefect and Impunity Engineered Semiconductors and Devices III - San Francisco, CA, United States
Duration: 2002 Apr 12002 Apr 5

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Tachiki, M., Ishizaka, H., Banno, T., Sakai, T., Song, K. S., Umezawa, H., & Kawarada, H. (2002). Low-temperature operation of diamond surface-channel field-effect transistors. Materials Research Society Symposium - Proceedings, 719, 139-143.