Low-temperature oxidation of silicon using UV-light-excited ozone

Aki Tosaka, Tetsuya Nishiguchi, Hidehiko Nonaka, Shingo Ichimura

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

An ultra low-temperature (<300°C) silicon oxidation process in which KrF excimer laser light (λ = 248 nm) is irradiated in highly concentrated ozone has been developed. The growth rate of SiO2 film was 5.2nm/10 min at 300°C and 3.6 nm/10 min at 70°C. The leakage current densities of grown at 70°C SiO2 in an electric field of over 8 MV/cm match well the calculated curve based on the Fowler-Nordheim tunneling. The oxidation mechanisms for two growth modes are discussed.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume44
Issue number33-36
DOIs
Publication statusPublished - 2005 Aug 26
Externally publishedYes

Fingerprint

Ultraviolet radiation
Ozone
ozone
Silicon
Oxidation
oxidation
Excimer lasers
silicon
cryogenic temperature
Leakage currents
Field emission
excimer lasers
leakage
Current density
Electric fields
current density
Temperature
electric fields
curves

Keywords

  • Oxidation
  • Ozone
  • Silicon
  • UV light

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Low-temperature oxidation of silicon using UV-light-excited ozone. / Tosaka, Aki; Nishiguchi, Tetsuya; Nonaka, Hidehiko; Ichimura, Shingo.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 44, No. 33-36, 26.08.2005.

Research output: Contribution to journalArticle

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