Low temperature oxidation processing with high purity ozone

A. Kurokawa, Shingo Ichimura, H. J. Kang, D. W. Moon

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

To lower the temperature of oxide-passivation processing the high-purity ozone (more than 98 mole%) was used instead of usual thermal oxidation. Initial oxide formation on a Si(111) surface with high-purity ozone is investigated by X-ray photoelectron spectroscopy (XPS). From the comparison of the suboxides formed with ozone and oxygen exposures, it is clear that ozone forms less suboxide than oxygen. The oxidation with ozone also proceeds on the hydrogen passivated surface which oxygen molecules do not oxidize.

Original languageEnglish
Pages (from-to)269-274
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume429
Publication statusPublished - 1996 Dec 1
Externally publishedYes
EventProceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA
Duration: 1996 Apr 81996 Apr 12

Fingerprint

Ozone
ozone
purity
Oxidation
oxidation
Processing
Oxygen
Oxides
oxygen
Temperature
oxides
Passivation
passivity
Hydrogen
X ray photoelectron spectroscopy
photoelectron spectroscopy
Molecules
hydrogen
molecules
x rays

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Low temperature oxidation processing with high purity ozone. / Kurokawa, A.; Ichimura, Shingo; Kang, H. J.; Moon, D. W.

In: Materials Research Society Symposium - Proceedings, Vol. 429, 01.12.1996, p. 269-274.

Research output: Contribution to journalConference article

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