Low-temperature processable organic-inorganic hybrid gate dielectrics for solution-based organic field-effect transistors

Takashi Nagase; Takashi Hamada; Kenji Tomatsu; Saori Yamazaki; Takashi Kobayashi; Shuichi Murakami; Kimihiro Matsukawa; Hiroyoshi Naito

doi:10.1002/adma.201001871

Low-temperature processable organic-inorganic hybrid gate dielectrics for solution-based organic field-effect transistors

Takashi Nagase^*, Takashi Hamada, Kenji Tomatsu, Saori Yamazaki, Takashi Kobayashi, Shuichi Murakami, Kimihiro Matsukawa, Hiroyoshi Naito

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

41 Citations (Scopus)

Abstract

Organic-inorganic hybrid poly(methyl silsesquioxane) with a low curing temperature of 150 °C synthesized by a sol-gel method is employed as a gate dielectric for solution-based organic field-effect transistors. The device exhibits mobility enhancement, compared with those with SiO₂ dielectrics, and hysteresis-free, high stable operation, which is attributed to extremely low concentration of silanol groups of the poly(methyl silsesquioxane) dielectric.

Original language	English
Pages (from-to)	4706-4710
Number of pages	5
Journal	Advanced Materials
Volume	22
Issue number	42
DOIs	https://doi.org/10.1002/adma.201001871
Publication status	Published - 2010 Nov 9
Externally published	Yes

Keywords

Organic Field-Effect Transistors
Organic-Inorganic Hybrid Dielectrics
Poly(methyl silsesquioxane)
Polymer Transistors
Printable Gate Dielectrics

ASJC Scopus subject areas

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

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abstract = "Organic-inorganic hybrid poly(methyl silsesquioxane) with a low curing temperature of 150 °C synthesized by a sol-gel method is employed as a gate dielectric for solution-based organic field-effect transistors. The device exhibits mobility enhancement, compared with those with SiO2 dielectrics, and hysteresis-free, high stable operation, which is attributed to extremely low concentration of silanol groups of the poly(methyl silsesquioxane) dielectric.",

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T1 - Low-temperature processable organic-inorganic hybrid gate dielectrics for solution-based organic field-effect transistors

AU - Nagase, Takashi

AU - Hamada, Takashi

AU - Tomatsu, Kenji

AU - Yamazaki, Saori

AU - Kobayashi, Takashi

AU - Murakami, Shuichi

AU - Matsukawa, Kimihiro

AU - Naito, Hiroyoshi

PY - 2010/11/9

Y1 - 2010/11/9

N2 - Organic-inorganic hybrid poly(methyl silsesquioxane) with a low curing temperature of 150 °C synthesized by a sol-gel method is employed as a gate dielectric for solution-based organic field-effect transistors. The device exhibits mobility enhancement, compared with those with SiO2 dielectrics, and hysteresis-free, high stable operation, which is attributed to extremely low concentration of silanol groups of the poly(methyl silsesquioxane) dielectric.

AB - Organic-inorganic hybrid poly(methyl silsesquioxane) with a low curing temperature of 150 °C synthesized by a sol-gel method is employed as a gate dielectric for solution-based organic field-effect transistors. The device exhibits mobility enhancement, compared with those with SiO2 dielectrics, and hysteresis-free, high stable operation, which is attributed to extremely low concentration of silanol groups of the poly(methyl silsesquioxane) dielectric.

KW - Organic Field-Effect Transistors

KW - Organic-Inorganic Hybrid Dielectrics

KW - Poly(methyl silsesquioxane)

KW - Polymer Transistors

KW - Printable Gate Dielectrics

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Low-temperature processable organic-inorganic hybrid gate dielectrics for solution-based organic field-effect transistors

Abstract

Keywords

ASJC Scopus subject areas

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