Room-temperature silicon-to-silicon bonding has been performed. It is an electrostatic bonding using sputtered low melting point glass as an intermediate layer. Wafers can be bonded at room temperature with an applied voltage of about 50 V. This technique is useful for the fabrication of intelligent sensors and microelectromechanical systems.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Metals and Alloys
- Electrical and Electronic Engineering