Low-temperature silicon-to-silicon anodic bonding with intermediate low melting point glan

Masayoshi Esashi, Akira Nakano, Shuichi Shoji, Hiroyuki Hebiguchi

Research output: Contribution to journalArticle

55 Citations (Scopus)

Abstract

Room-temperature silicon-to-silicon bonding has been performed. It is an electrostatic bonding using sputtered low melting point glass as an intermediate layer. Wafers can be bonded at room temperature with an applied voltage of about 50 V. This technique is useful for the fabrication of intelligent sensors and microelectromechanical systems.

Original languageEnglish
Pages (from-to)931-934
Number of pages4
JournalSensors and Actuators: A. Physical
Volume23
Issue number1-3
DOIs
Publication statusPublished - 1990
Externally publishedYes

Fingerprint

Silicon
melting points
Melting point
electrostatic bonding
silicon
room temperature
microelectromechanical systems
MEMS
Electrostatics
wafers
Fabrication
Glass
Temperature
fabrication
glass
sensors
Sensors
Electric potential
electric potential

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Mechanical Engineering
  • Instrumentation

Cite this

Low-temperature silicon-to-silicon anodic bonding with intermediate low melting point glan. / Esashi, Masayoshi; Nakano, Akira; Shoji, Shuichi; Hebiguchi, Hiroyuki.

In: Sensors and Actuators: A. Physical, Vol. 23, No. 1-3, 1990, p. 931-934.

Research output: Contribution to journalArticle

Esashi, Masayoshi ; Nakano, Akira ; Shoji, Shuichi ; Hebiguchi, Hiroyuki. / Low-temperature silicon-to-silicon anodic bonding with intermediate low melting point glan. In: Sensors and Actuators: A. Physical. 1990 ; Vol. 23, No. 1-3. pp. 931-934.
@article{04a25af5a118450ba78b97e215ded857,
title = "Low-temperature silicon-to-silicon anodic bonding with intermediate low melting point glan",
abstract = "Room-temperature silicon-to-silicon bonding has been performed. It is an electrostatic bonding using sputtered low melting point glass as an intermediate layer. Wafers can be bonded at room temperature with an applied voltage of about 50 V. This technique is useful for the fabrication of intelligent sensors and microelectromechanical systems.",
author = "Masayoshi Esashi and Akira Nakano and Shuichi Shoji and Hiroyuki Hebiguchi",
year = "1990",
doi = "10.1016/0924-4247(90)87062-N",
language = "English",
volume = "23",
pages = "931--934",
journal = "Sensors and Actuators, A: Physical",
issn = "0924-4247",
publisher = "Elsevier",
number = "1-3",

}

TY - JOUR

T1 - Low-temperature silicon-to-silicon anodic bonding with intermediate low melting point glan

AU - Esashi, Masayoshi

AU - Nakano, Akira

AU - Shoji, Shuichi

AU - Hebiguchi, Hiroyuki

PY - 1990

Y1 - 1990

N2 - Room-temperature silicon-to-silicon bonding has been performed. It is an electrostatic bonding using sputtered low melting point glass as an intermediate layer. Wafers can be bonded at room temperature with an applied voltage of about 50 V. This technique is useful for the fabrication of intelligent sensors and microelectromechanical systems.

AB - Room-temperature silicon-to-silicon bonding has been performed. It is an electrostatic bonding using sputtered low melting point glass as an intermediate layer. Wafers can be bonded at room temperature with an applied voltage of about 50 V. This technique is useful for the fabrication of intelligent sensors and microelectromechanical systems.

UR - http://www.scopus.com/inward/record.url?scp=0025414977&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0025414977&partnerID=8YFLogxK

U2 - 10.1016/0924-4247(90)87062-N

DO - 10.1016/0924-4247(90)87062-N

M3 - Article

AN - SCOPUS:0025414977

VL - 23

SP - 931

EP - 934

JO - Sensors and Actuators, A: Physical

JF - Sensors and Actuators, A: Physical

SN - 0924-4247

IS - 1-3

ER -