Low-temperature silicon-to-silicon anodic bonding with intermediate low melting point glan

Masayoshi Esashi, Akira Nakano, Shuichi Shoji, Hiroyuki Hebiguchi

Research output: Contribution to journalArticle

57 Citations (Scopus)

Abstract

Room-temperature silicon-to-silicon bonding has been performed. It is an electrostatic bonding using sputtered low melting point glass as an intermediate layer. Wafers can be bonded at room temperature with an applied voltage of about 50 V. This technique is useful for the fabrication of intelligent sensors and microelectromechanical systems.

Original languageEnglish
Pages (from-to)931-934
Number of pages4
JournalSensors and Actuators: A. Physical
Volume23
Issue number1-3
DOIs
Publication statusPublished - 1990 Apr

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering

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