Low-temperature silicon-to-silicon anodic bonding with intermediate low melting point glass

Masavoshi Esashi, Aklra Nakano, Shuichi Shoji, Hiroyuki Hebiguchi

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

Room-temperature silicon-to-silicon bonding has been performed. It is an electrostatic bonding using sputtered low melting point glass as an intermediate layer. Wafers can be bonded at room temperature with an applied voltage of about 50 V. This technique is useful for the fabrication of intelligent sensors and microelectromechanical systems.

Original languageEnglish
Title of host publicationMicromechanics and MEMS
Subtitle of host publicationClassic and Seminal Papers to 1990
PublisherJohn Wiley and Sons Inc.
Pages588-591
Number of pages4
ISBN (Electronic)9780470545263
ISBN (Print)0780310853, 9780780310858
DOIs
Publication statusPublished - 1997 Jan 1
Externally publishedYes

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ASJC Scopus subject areas

  • Computer Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)
  • Energy(all)

Cite this

Esashi, M., Nakano, A., Shoji, S., & Hebiguchi, H. (1997). Low-temperature silicon-to-silicon anodic bonding with intermediate low melting point glass. In Micromechanics and MEMS: Classic and Seminal Papers to 1990 (pp. 588-591). John Wiley and Sons Inc.. https://doi.org/10.1109/9780470545263.sect11