Low-temperature silicon-to-silicon anodic bonding with intermediate low melting point glass

Masavoshi Esashi, Aklra Nakano, Shuichi Shoji, Hiroyuki Hebiguchi

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

Room-temperature silicon-to-silicon bonding has been performed. It is an electrostatic bonding using sputtered low melting point glass as an intermediate layer. Wafers can be bonded at room temperature with an applied voltage of about 50 V. This technique is useful for the fabrication of intelligent sensors and microelectromechanical systems.

Original languageEnglish
Title of host publicationMicromechanics and MEMS
Subtitle of host publicationClassic and Seminal Papers to 1990
PublisherJohn Wiley and Sons Inc.
Pages588-591
Number of pages4
ISBN (Electronic)9780470545263
ISBN (Print)0780310853, 9780780310858
DOIs
Publication statusPublished - 1997 Jan 1
Externally publishedYes

Fingerprint

melting points
Melting point
electrostatic bonding
Glass
Silicon
glass
silicon
room temperature
microelectromechanical systems
MEMS
Electrostatics
wafers
Fabrication
Temperature
fabrication
sensors
Sensors
Electric potential
electric potential

ASJC Scopus subject areas

  • Computer Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)
  • Energy(all)

Cite this

Esashi, M., Nakano, A., Shoji, S., & Hebiguchi, H. (1997). Low-temperature silicon-to-silicon anodic bonding with intermediate low melting point glass. In Micromechanics and MEMS: Classic and Seminal Papers to 1990 (pp. 588-591). John Wiley and Sons Inc.. https://doi.org/10.1109/9780470545263.sect11

Low-temperature silicon-to-silicon anodic bonding with intermediate low melting point glass. / Esashi, Masavoshi; Nakano, Aklra; Shoji, Shuichi; Hebiguchi, Hiroyuki.

Micromechanics and MEMS: Classic and Seminal Papers to 1990. John Wiley and Sons Inc., 1997. p. 588-591.

Research output: Chapter in Book/Report/Conference proceedingChapter

Esashi, M, Nakano, A, Shoji, S & Hebiguchi, H 1997, Low-temperature silicon-to-silicon anodic bonding with intermediate low melting point glass. in Micromechanics and MEMS: Classic and Seminal Papers to 1990. John Wiley and Sons Inc., pp. 588-591. https://doi.org/10.1109/9780470545263.sect11
Esashi M, Nakano A, Shoji S, Hebiguchi H. Low-temperature silicon-to-silicon anodic bonding with intermediate low melting point glass. In Micromechanics and MEMS: Classic and Seminal Papers to 1990. John Wiley and Sons Inc. 1997. p. 588-591 https://doi.org/10.1109/9780470545263.sect11
Esashi, Masavoshi ; Nakano, Aklra ; Shoji, Shuichi ; Hebiguchi, Hiroyuki. / Low-temperature silicon-to-silicon anodic bonding with intermediate low melting point glass. Micromechanics and MEMS: Classic and Seminal Papers to 1990. John Wiley and Sons Inc., 1997. pp. 588-591
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