Low temperature specific heat of GaP, InP, GaAs and InAs compounds

Katsunori Yamaguchi, Yoshiyuki Chiba, Masahito Yoshizawa, Kazuo Kameda

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

Low temperature specific heats of the GaP, InP, GaAs and InAs compounds were measured over the temperature range 4.5 to 298.15 K using an adiabatic calorimeter. The Debye temperatures were derived from the obtained specific heat data. The curves of Debye temperature as a function of temperature for the GaP, InP, GaAs and InAs compounds exhibit a minimum in the temperature range of 15-30 K and a maximum at somewhat higher temparatures (approximately 130∼180 K). The standard entropies of the GaP, InP, GaAs and InAs compounds determined from the specific heat data were 50.5, 62.1, 64.1 and 75.5 J/(mol·K), respectively. A relation was found between the standard entropy and the cohesive energy. The standard entropies of the III-V compounds decreased linearly with increasing cohesive energy per bond.

Original languageEnglish
Pages (from-to)1181-1186
Number of pages6
JournalNippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals
Volume60
Issue number12
DOIs
Publication statusPublished - 1996
Externally publishedYes

    Fingerprint

Keywords

  • Adiabatic calorimeter
  • Debye temperature
  • GaAs
  • GaP
  • III-V compound semiconductor
  • InAs
  • InP
  • Specific heat
  • Standard entropy

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Mechanics of Materials
  • Metals and Alloys
  • Materials Chemistry

Cite this