Low-temperature synthesis of diamond films using magneto-microwave plasma CVD

Jin Wei, Hiroshi Kawarada, Jun ichi Suzuki, Akio Hiraki

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

At a low temperature of 500°C, we have formed diamond films on Al substrates at 0.1 Torr using a magneto-microwave plasma CVD system. Since diamond can be formed at the low pressure of 0.1 Torr, the important parameters for diamond formation such as the plasma density during the diamond deposition can be measured and is found to be the highest (2.1 × 1011 cm-3) at ECR condition. Above 1 × 1011 cm-3, using a (CH4+CO2)/H2 mixture, which is a suitable reaction gas for low-temperature diamond formation, high-quality diamond films have been obtained at temperatures as low as 500°C and at low pressure (0.1 Torr) on Al.

Original languageEnglish
Pages (from-to)1483-1485
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume29
Issue number8
Publication statusPublished - 1990 Aug
Externally publishedYes

Fingerprint

Plasma CVD
Diamond films
diamond films
Diamonds
diamonds
Microwaves
vapor deposition
microwaves
synthesis
low pressure
Temperature
Plasma density
plasma density
Substrates
Gases
gases
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Low-temperature synthesis of diamond films using magneto-microwave plasma CVD. / Wei, Jin; Kawarada, Hiroshi; Suzuki, Jun ichi; Hiraki, Akio.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 29, No. 8, 08.1990, p. 1483-1485.

Research output: Contribution to journalArticle

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