Low temperature synthesis of extremely dense and vertically aligned single-walled carbon nanotubes

Guofang Zhong, Takayuki Iwasaki, Kotaro Honda, Yukio Furukawa, Iwao Ohdomari, Hiroshi Kawarada

    Research output: Contribution to journalArticle

    132 Citations (Scopus)

    Abstract

    A novel point-arc microwave plasma chemical vapor deposition (CVD) apparatus was employed to grow single-walled carbon nanotubes (SWNTs) on Si substrates coated with a sandwich-like nano-layer structure of 0.7 nm Al 2O3 (top)/0.5nm Fe/ 5-70 nm Al2O3 by conventional high frequency sputtering. The growth of extremely dense and vertically aligned SWNTs with an almost constant growth rate of 270 μm/h within 40 min at a temperature as low as 600°C was demonstrated for the first time. The volume density of the as-grown SWNT films is as higher as 66kg/m3.

    Original languageEnglish
    Pages (from-to)1558-1561
    Number of pages4
    JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
    Volume44
    Issue number4 A
    DOIs
    Publication statusPublished - 2005 Apr

    Fingerprint

    Single-walled carbon nanotubes (SWCN)
    carbon nanotubes
    synthesis
    Temperature
    Sputtering
    Chemical vapor deposition
    arcs
    sputtering
    Microwaves
    vapor deposition
    Plasmas
    microwaves
    Substrates
    temperature

    Keywords

    • Catalyst
    • Chemical vapor deposition
    • Low-temperature deposition
    • Point-arc microwave plasma
    • Single-walled carbon nanotubes
    • Vertical alignment

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this

    Low temperature synthesis of extremely dense and vertically aligned single-walled carbon nanotubes. / Zhong, Guofang; Iwasaki, Takayuki; Honda, Kotaro; Furukawa, Yukio; Ohdomari, Iwao; Kawarada, Hiroshi.

    In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 44, No. 4 A, 04.2005, p. 1558-1561.

    Research output: Contribution to journalArticle

    @article{07083dae5f954e98918755b2476b8ccd,
    title = "Low temperature synthesis of extremely dense and vertically aligned single-walled carbon nanotubes",
    abstract = "A novel point-arc microwave plasma chemical vapor deposition (CVD) apparatus was employed to grow single-walled carbon nanotubes (SWNTs) on Si substrates coated with a sandwich-like nano-layer structure of 0.7 nm Al 2O3 (top)/0.5nm Fe/ 5-70 nm Al2O3 by conventional high frequency sputtering. The growth of extremely dense and vertically aligned SWNTs with an almost constant growth rate of 270 μm/h within 40 min at a temperature as low as 600°C was demonstrated for the first time. The volume density of the as-grown SWNT films is as higher as 66kg/m3.",
    keywords = "Catalyst, Chemical vapor deposition, Low-temperature deposition, Point-arc microwave plasma, Single-walled carbon nanotubes, Vertical alignment",
    author = "Guofang Zhong and Takayuki Iwasaki and Kotaro Honda and Yukio Furukawa and Iwao Ohdomari and Hiroshi Kawarada",
    year = "2005",
    month = "4",
    doi = "10.1143/JJAP.44.1558",
    language = "English",
    volume = "44",
    pages = "1558--1561",
    journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
    issn = "0021-4922",
    publisher = "Japan Society of Applied Physics",
    number = "4 A",

    }

    TY - JOUR

    T1 - Low temperature synthesis of extremely dense and vertically aligned single-walled carbon nanotubes

    AU - Zhong, Guofang

    AU - Iwasaki, Takayuki

    AU - Honda, Kotaro

    AU - Furukawa, Yukio

    AU - Ohdomari, Iwao

    AU - Kawarada, Hiroshi

    PY - 2005/4

    Y1 - 2005/4

    N2 - A novel point-arc microwave plasma chemical vapor deposition (CVD) apparatus was employed to grow single-walled carbon nanotubes (SWNTs) on Si substrates coated with a sandwich-like nano-layer structure of 0.7 nm Al 2O3 (top)/0.5nm Fe/ 5-70 nm Al2O3 by conventional high frequency sputtering. The growth of extremely dense and vertically aligned SWNTs with an almost constant growth rate of 270 μm/h within 40 min at a temperature as low as 600°C was demonstrated for the first time. The volume density of the as-grown SWNT films is as higher as 66kg/m3.

    AB - A novel point-arc microwave plasma chemical vapor deposition (CVD) apparatus was employed to grow single-walled carbon nanotubes (SWNTs) on Si substrates coated with a sandwich-like nano-layer structure of 0.7 nm Al 2O3 (top)/0.5nm Fe/ 5-70 nm Al2O3 by conventional high frequency sputtering. The growth of extremely dense and vertically aligned SWNTs with an almost constant growth rate of 270 μm/h within 40 min at a temperature as low as 600°C was demonstrated for the first time. The volume density of the as-grown SWNT films is as higher as 66kg/m3.

    KW - Catalyst

    KW - Chemical vapor deposition

    KW - Low-temperature deposition

    KW - Point-arc microwave plasma

    KW - Single-walled carbon nanotubes

    KW - Vertical alignment

    UR - http://www.scopus.com/inward/record.url?scp=21244453150&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=21244453150&partnerID=8YFLogxK

    U2 - 10.1143/JJAP.44.1558

    DO - 10.1143/JJAP.44.1558

    M3 - Article

    AN - SCOPUS:21244453150

    VL - 44

    SP - 1558

    EP - 1561

    JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

    JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

    SN - 0021-4922

    IS - 4 A

    ER -