Abstract
A novel point-arc microwave plasma chemical vapor deposition (CVD) apparatus was employed to grow single-walled carbon nanotubes (SWNTs) on Si substrates coated with a sandwich-like nano-layer structure of 0.7 nm Al 2O3 (top)/0.5nm Fe/ 5-70 nm Al2O3 by conventional high frequency sputtering. The growth of extremely dense and vertically aligned SWNTs with an almost constant growth rate of 270 μm/h within 40 min at a temperature as low as 600°C was demonstrated for the first time. The volume density of the as-grown SWNT films is as higher as 66kg/m3.
Original language | English |
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Pages (from-to) | 1558-1561 |
Number of pages | 4 |
Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
Volume | 44 |
Issue number | 4 A |
DOIs | |
Publication status | Published - 2005 Apr |
Keywords
- Catalyst
- Chemical vapor deposition
- Low-temperature deposition
- Point-arc microwave plasma
- Single-walled carbon nanotubes
- Vertical alignment
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)