Low-temperature thermal conductivity of heavily doped n-type Ge

Takayuki Sota, K. Suzuki, D. Fortier

    Research output: Contribution to journalArticle

    3 Citations (Scopus)

    Abstract

    We have theoretically studied the low-temperature thermal conductivity of heavily doped n-type Ge by using an expression of the phonon relaxation rate previously derived by us in which both the intravalley and intervalley relaxation times of the conduction electrons due to ionized impurities have been taken into account. We have measured of a Ge sample doped with 2.78×1018 As cm-3 at 1.2<T<7 K. The following is found: In the temperature region T<1 K, becomes more sensitive to the intervalley relaxation time as T decreases; that is, the dependence of on the impurity species becomes more pronounced. On the other hand, in the temperature region T2 K, depends weakly on the impurity species. This seems to be consistent with the experimental data reported previously and given by us here. Furthermore, the calculated thermal conductivity is quantitatively in fairly good agreement with the experiment. However, there exist some discrepancies between them. A discussion on this is given.

    Original languageEnglish
    Pages (from-to)7947-7952
    Number of pages6
    JournalPhysical Review B
    Volume31
    Issue number12
    DOIs
    Publication statusPublished - 1985

    Fingerprint

    Thermal conductivity
    thermal conductivity
    Impurities
    impurities
    Relaxation time
    relaxation time
    conduction electrons
    Temperature
    temperature
    Electrons
    Experiments

    ASJC Scopus subject areas

    • Condensed Matter Physics

    Cite this

    Low-temperature thermal conductivity of heavily doped n-type Ge. / Sota, Takayuki; Suzuki, K.; Fortier, D.

    In: Physical Review B, Vol. 31, No. 12, 1985, p. 7947-7952.

    Research output: Contribution to journalArticle

    Sota, Takayuki ; Suzuki, K. ; Fortier, D. / Low-temperature thermal conductivity of heavily doped n-type Ge. In: Physical Review B. 1985 ; Vol. 31, No. 12. pp. 7947-7952.
    @article{69f723fa7b374fd09e2fef0104bf3f9e,
    title = "Low-temperature thermal conductivity of heavily doped n-type Ge",
    abstract = "We have theoretically studied the low-temperature thermal conductivity of heavily doped n-type Ge by using an expression of the phonon relaxation rate previously derived by us in which both the intravalley and intervalley relaxation times of the conduction electrons due to ionized impurities have been taken into account. We have measured of a Ge sample doped with 2.78×1018 As cm-3 at 1.2<T<7 K. The following is found: In the temperature region T<1 K, becomes more sensitive to the intervalley relaxation time as T decreases; that is, the dependence of on the impurity species becomes more pronounced. On the other hand, in the temperature region T2 K, depends weakly on the impurity species. This seems to be consistent with the experimental data reported previously and given by us here. Furthermore, the calculated thermal conductivity is quantitatively in fairly good agreement with the experiment. However, there exist some discrepancies between them. A discussion on this is given.",
    author = "Takayuki Sota and K. Suzuki and D. Fortier",
    year = "1985",
    doi = "10.1103/PhysRevB.31.7947",
    language = "English",
    volume = "31",
    pages = "7947--7952",
    journal = "Physical Review B-Condensed Matter",
    issn = "0163-1829",
    publisher = "American Institute of Physics Publising LLC",
    number = "12",

    }

    TY - JOUR

    T1 - Low-temperature thermal conductivity of heavily doped n-type Ge

    AU - Sota, Takayuki

    AU - Suzuki, K.

    AU - Fortier, D.

    PY - 1985

    Y1 - 1985

    N2 - We have theoretically studied the low-temperature thermal conductivity of heavily doped n-type Ge by using an expression of the phonon relaxation rate previously derived by us in which both the intravalley and intervalley relaxation times of the conduction electrons due to ionized impurities have been taken into account. We have measured of a Ge sample doped with 2.78×1018 As cm-3 at 1.2<T<7 K. The following is found: In the temperature region T<1 K, becomes more sensitive to the intervalley relaxation time as T decreases; that is, the dependence of on the impurity species becomes more pronounced. On the other hand, in the temperature region T2 K, depends weakly on the impurity species. This seems to be consistent with the experimental data reported previously and given by us here. Furthermore, the calculated thermal conductivity is quantitatively in fairly good agreement with the experiment. However, there exist some discrepancies between them. A discussion on this is given.

    AB - We have theoretically studied the low-temperature thermal conductivity of heavily doped n-type Ge by using an expression of the phonon relaxation rate previously derived by us in which both the intravalley and intervalley relaxation times of the conduction electrons due to ionized impurities have been taken into account. We have measured of a Ge sample doped with 2.78×1018 As cm-3 at 1.2<T<7 K. The following is found: In the temperature region T<1 K, becomes more sensitive to the intervalley relaxation time as T decreases; that is, the dependence of on the impurity species becomes more pronounced. On the other hand, in the temperature region T2 K, depends weakly on the impurity species. This seems to be consistent with the experimental data reported previously and given by us here. Furthermore, the calculated thermal conductivity is quantitatively in fairly good agreement with the experiment. However, there exist some discrepancies between them. A discussion on this is given.

    UR - http://www.scopus.com/inward/record.url?scp=35949018667&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=35949018667&partnerID=8YFLogxK

    U2 - 10.1103/PhysRevB.31.7947

    DO - 10.1103/PhysRevB.31.7947

    M3 - Article

    VL - 31

    SP - 7947

    EP - 7952

    JO - Physical Review B-Condensed Matter

    JF - Physical Review B-Condensed Matter

    SN - 0163-1829

    IS - 12

    ER -