Low-temperature thermal conductivity of heavily doped p-type semiconductors

Takayuki Sota, K. Suzuki, D. Fortier

    Research output: Contribution to journalArticle

    2 Citations (Scopus)

    Abstract

    A theoretical and experimental investigation of the low-temperature thermal conductivity of heavily doped p-type semiconductors has been carried out. The concentration dependence of the thermal conductivity for GaSb and Si obtained here is found to be similar to that for other heavily doped p-type semiconductors. Calculations of the thermal conductivity for various p-type semiconductors including GaSb and Si have been done by using the expression for the phonon relaxation rate obtained in the authors' previous paper (see ibid. vol.17, p.2661 (1984)). They can semiquantitatively explain the thermal conductivity of semiconductors with the large spin-orbit splitting. It is shown that the essential features of the concentration dependence of the thermal conductivity are due to the concentration dependence of the shear terms arising from a multiband structure of the valence bands and of the cut-off frequency in the hole-phonon interaction.

    Original languageEnglish
    Article number006
    Pages (from-to)5935-5944
    Number of pages10
    JournalJournal of Physics C: Solid State Physics
    Volume17
    Issue number33
    DOIs
    Publication statusPublished - 1984

    Fingerprint

    p-type semiconductors
    Thermal conductivity
    thermal conductivity
    Semiconductor materials
    Temperature
    Cutoff frequency
    Valence bands
    Orbits
    cut-off
    shear
    valence
    orbits
    interactions

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics

    Cite this

    Low-temperature thermal conductivity of heavily doped p-type semiconductors. / Sota, Takayuki; Suzuki, K.; Fortier, D.

    In: Journal of Physics C: Solid State Physics, Vol. 17, No. 33, 006, 1984, p. 5935-5944.

    Research output: Contribution to journalArticle

    @article{a8db8d28e13e44b797bd83f1541ef992,
    title = "Low-temperature thermal conductivity of heavily doped p-type semiconductors",
    abstract = "A theoretical and experimental investigation of the low-temperature thermal conductivity of heavily doped p-type semiconductors has been carried out. The concentration dependence of the thermal conductivity for GaSb and Si obtained here is found to be similar to that for other heavily doped p-type semiconductors. Calculations of the thermal conductivity for various p-type semiconductors including GaSb and Si have been done by using the expression for the phonon relaxation rate obtained in the authors' previous paper (see ibid. vol.17, p.2661 (1984)). They can semiquantitatively explain the thermal conductivity of semiconductors with the large spin-orbit splitting. It is shown that the essential features of the concentration dependence of the thermal conductivity are due to the concentration dependence of the shear terms arising from a multiband structure of the valence bands and of the cut-off frequency in the hole-phonon interaction.",
    author = "Takayuki Sota and K. Suzuki and D. Fortier",
    year = "1984",
    doi = "10.1088/0022-3719/17/33/006",
    language = "English",
    volume = "17",
    pages = "5935--5944",
    journal = "Journal of Physics Condensed Matter",
    issn = "0953-8984",
    publisher = "IOP Publishing Ltd.",
    number = "33",

    }

    TY - JOUR

    T1 - Low-temperature thermal conductivity of heavily doped p-type semiconductors

    AU - Sota, Takayuki

    AU - Suzuki, K.

    AU - Fortier, D.

    PY - 1984

    Y1 - 1984

    N2 - A theoretical and experimental investigation of the low-temperature thermal conductivity of heavily doped p-type semiconductors has been carried out. The concentration dependence of the thermal conductivity for GaSb and Si obtained here is found to be similar to that for other heavily doped p-type semiconductors. Calculations of the thermal conductivity for various p-type semiconductors including GaSb and Si have been done by using the expression for the phonon relaxation rate obtained in the authors' previous paper (see ibid. vol.17, p.2661 (1984)). They can semiquantitatively explain the thermal conductivity of semiconductors with the large spin-orbit splitting. It is shown that the essential features of the concentration dependence of the thermal conductivity are due to the concentration dependence of the shear terms arising from a multiband structure of the valence bands and of the cut-off frequency in the hole-phonon interaction.

    AB - A theoretical and experimental investigation of the low-temperature thermal conductivity of heavily doped p-type semiconductors has been carried out. The concentration dependence of the thermal conductivity for GaSb and Si obtained here is found to be similar to that for other heavily doped p-type semiconductors. Calculations of the thermal conductivity for various p-type semiconductors including GaSb and Si have been done by using the expression for the phonon relaxation rate obtained in the authors' previous paper (see ibid. vol.17, p.2661 (1984)). They can semiquantitatively explain the thermal conductivity of semiconductors with the large spin-orbit splitting. It is shown that the essential features of the concentration dependence of the thermal conductivity are due to the concentration dependence of the shear terms arising from a multiband structure of the valence bands and of the cut-off frequency in the hole-phonon interaction.

    UR - http://www.scopus.com/inward/record.url?scp=36149039854&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=36149039854&partnerID=8YFLogxK

    U2 - 10.1088/0022-3719/17/33/006

    DO - 10.1088/0022-3719/17/33/006

    M3 - Article

    AN - SCOPUS:36149039854

    VL - 17

    SP - 5935

    EP - 5944

    JO - Journal of Physics Condensed Matter

    JF - Journal of Physics Condensed Matter

    SN - 0953-8984

    IS - 33

    M1 - 006

    ER -