Low-temperature transport properties of holes introduced by ionic liquid gating in hydrogen-terminated diamond surfaces

Takahide Yamaguchi, Eiichiro Watanabe, Hirotaka Osato, Daiju Tsuya, Keita Deguchi, Tohru Watanabe, Hiroyuki Takeya, Yoshihiko Takano, Shinichiro Kurihara, Hiroshi Kawarada

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Abstract

The surface conductivity of (111)- and (100)-oriented hydrogen-terminated diamonds was investigated at low temperatures for different carrier densities. The carrier density was controlled in a wide range in an electric doublelayer transistor configuration using ionic liquids. As the carrier density was increased, the temperature dependences of sheet resistance and mobility changed from semiconducting to metallic ones: the sheet resistance and mobility for the (111) surface were nearly independent of temperature for a sheet carrier density of ̃4 × 1013 cm-2, indicating metallic carrier transport. It was also found that the interface capacitance, determined from the gate voltage dependence of the Hall carrier density, depended significantly on the crystal orientation.

Original languageEnglish
Article number074718
Journaljournal of the physical society of japan
Volume82
Issue number7
DOIs
Publication statusPublished - 2013 Jul 1

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Keywords

  • Diamond
  • Field effect
  • Hydrogen termination
  • Ionic liquid
  • Surface conductivity

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Yamaguchi, T., Watanabe, E., Osato, H., Tsuya, D., Deguchi, K., Watanabe, T., Takeya, H., Takano, Y., Kurihara, S., & Kawarada, H. (2013). Low-temperature transport properties of holes introduced by ionic liquid gating in hydrogen-terminated diamond surfaces. journal of the physical society of japan, 82(7), [074718]. https://doi.org/10.7566/JPSJ.82.074718