Low temperature treatment of the (001) ZnTe substrate surface with the assist of atomic hydrogen

K. Tsutsumi, H. Terakado, M. Enami, Masakazu Kobayashi

    Research output: Contribution to journalArticle

    16 Citations (Scopus)

    Abstract

    The use of atomic hydrogen for the low temperature treatment of ZnTe substrate surface was discussed. The hydrogen treatment at 100°C removed the surface oxide of the compound prior to its nucleation. The reconstructed surface was achieved at 230°C through annealing and the nucleation was also confirmed.

    Original languageEnglish
    Pages (from-to)1959-1962
    Number of pages4
    JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
    Volume21
    Issue number4
    Publication statusPublished - 2003 Jul

    Fingerprint

    Hydrogen
    Nucleation
    Substrates
    hydrogen
    nucleation
    Temperature
    Annealing
    annealing
    Oxides
    oxides

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Surfaces and Interfaces
    • Physics and Astronomy (miscellaneous)

    Cite this

    Low temperature treatment of the (001) ZnTe substrate surface with the assist of atomic hydrogen. / Tsutsumi, K.; Terakado, H.; Enami, M.; Kobayashi, Masakazu.

    In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 21, No. 4, 07.2003, p. 1959-1962.

    Research output: Contribution to journalArticle

    @article{7cc7225360e443ec85a7d85216904ae6,
    title = "Low temperature treatment of the (001) ZnTe substrate surface with the assist of atomic hydrogen",
    abstract = "The use of atomic hydrogen for the low temperature treatment of ZnTe substrate surface was discussed. The hydrogen treatment at 100°C removed the surface oxide of the compound prior to its nucleation. The reconstructed surface was achieved at 230°C through annealing and the nucleation was also confirmed.",
    author = "K. Tsutsumi and H. Terakado and M. Enami and Masakazu Kobayashi",
    year = "2003",
    month = "7",
    language = "English",
    volume = "21",
    pages = "1959--1962",
    journal = "Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena",
    issn = "1071-1023",
    publisher = "AVS Science and Technology Society",
    number = "4",

    }

    TY - JOUR

    T1 - Low temperature treatment of the (001) ZnTe substrate surface with the assist of atomic hydrogen

    AU - Tsutsumi, K.

    AU - Terakado, H.

    AU - Enami, M.

    AU - Kobayashi, Masakazu

    PY - 2003/7

    Y1 - 2003/7

    N2 - The use of atomic hydrogen for the low temperature treatment of ZnTe substrate surface was discussed. The hydrogen treatment at 100°C removed the surface oxide of the compound prior to its nucleation. The reconstructed surface was achieved at 230°C through annealing and the nucleation was also confirmed.

    AB - The use of atomic hydrogen for the low temperature treatment of ZnTe substrate surface was discussed. The hydrogen treatment at 100°C removed the surface oxide of the compound prior to its nucleation. The reconstructed surface was achieved at 230°C through annealing and the nucleation was also confirmed.

    UR - http://www.scopus.com/inward/record.url?scp=0141681059&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=0141681059&partnerID=8YFLogxK

    M3 - Article

    VL - 21

    SP - 1959

    EP - 1962

    JO - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

    JF - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

    SN - 1071-1023

    IS - 4

    ER -