Low-temperature wafer bonding using sub-micron gold particles for wafer-level MEMS packaging

H. Ishida, T. Ogashiwa, Y. Kanehira, S. Ito, T. Yazaki, Jun Mizuno

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Low-temperature wafer bonding using sub-m gold particles together with wafer-level pattern transfer method has been developed. Sub-m Au particle patterns were successfully transferred at 150°C and wafer bonding was performed at 200°C. Surface compliant performance was demonstrated by compression deformation measurement.

Original languageEnglish
Title of host publicationProceedings of 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012
Pages173
Number of pages1
DOIs
Publication statusPublished - 2012
Event2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012 - Tokyo
Duration: 2012 May 222012 May 23

Other

Other2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012
CityTokyo
Period12/5/2212/5/23

Fingerprint

Wafer bonding
MEMS
Packaging
Gold
Temperature

ASJC Scopus subject areas

  • Computer Graphics and Computer-Aided Design
  • Computer Vision and Pattern Recognition

Cite this

Ishida, H., Ogashiwa, T., Kanehira, Y., Ito, S., Yazaki, T., & Mizuno, J. (2012). Low-temperature wafer bonding using sub-micron gold particles for wafer-level MEMS packaging. In Proceedings of 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012 (pp. 173). [6238083] https://doi.org/10.1109/LTB-3D.2012.6238083

Low-temperature wafer bonding using sub-micron gold particles for wafer-level MEMS packaging. / Ishida, H.; Ogashiwa, T.; Kanehira, Y.; Ito, S.; Yazaki, T.; Mizuno, Jun.

Proceedings of 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012. 2012. p. 173 6238083.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ishida, H, Ogashiwa, T, Kanehira, Y, Ito, S, Yazaki, T & Mizuno, J 2012, Low-temperature wafer bonding using sub-micron gold particles for wafer-level MEMS packaging. in Proceedings of 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012., 6238083, pp. 173, 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012, Tokyo, 12/5/22. https://doi.org/10.1109/LTB-3D.2012.6238083
Ishida H, Ogashiwa T, Kanehira Y, Ito S, Yazaki T, Mizuno J. Low-temperature wafer bonding using sub-micron gold particles for wafer-level MEMS packaging. In Proceedings of 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012. 2012. p. 173. 6238083 https://doi.org/10.1109/LTB-3D.2012.6238083
Ishida, H. ; Ogashiwa, T. ; Kanehira, Y. ; Ito, S. ; Yazaki, T. ; Mizuno, Jun. / Low-temperature wafer bonding using sub-micron gold particles for wafer-level MEMS packaging. Proceedings of 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012. 2012. pp. 173
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