A low threshold 1.3 μm InGaAsP MQW laser array has been fabricated on a p-type InP substrate considering compatibility with n/p/n type laser-driver circuits. The laser has a p/n-type current-blocking structure and is made entirely by metal-organic chemical vapor deposition (MOCVD). A 10-channel laser array with a threshold current as low as 3.2 + 0.2 mA (per element) and a slope efficiency of 0.27 ±0.01 W/A is obtained.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering