Low-Threshold (3.2 mA per Element) 1.3 μm InGaAsP MQW Laser Array on a p-Type Substrate

S. Yamashita, A. Oka, T. Kawano, T. Tsuchiya, K. Saitoh, K. Uomi, Y. Ono

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

A low threshold 1.3 μm InGaAsP MQW laser array has been fabricated on a p-type InP substrate considering compatibility with n/p/n type laser-driver circuits. The laser has a p/n-type current-blocking structure and is made entirely by metal-organic chemical vapor deposition (MOCVD). A 10-channel laser array with a threshold current as low as 3.2 + 0.2 mA (per element) and a slope efficiency of 0.27 ±0.01 W/A is obtained.

Original languageEnglish
Pages (from-to)954-957
Number of pages4
JournalIEEE Photonics Technology Letters
Volume4
Issue number9
DOIs
Publication statusPublished - 1992 Sep
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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