Low-Threshold (3.2 mA per Element) 1.3 μm InGaAsP MQW Laser Array on a p-Type Substrate

S. Yamashita, A. Oka, Toshihiro Kawano, T. Tsuchiya, K. Saitoh, K. Uomi, Y. Ono

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

A low threshold 1.3 μm InGaAsP MQW laser array has been fabricated on a p-type InP substrate considering compatibility with n/p/n type laser-driver circuits. The laser has a p/n-type current-blocking structure and is made entirely by metal-organic chemical vapor deposition (MOCVD). A 10-channel laser array with a threshold current as low as 3.2 + 0.2 mA (per element) and a slope efficiency of 0.27 ±0.01 W/A is obtained.

Original languageEnglish
Pages (from-to)954-957
Number of pages4
JournalIEEE Photonics Technology Letters
Volume4
Issue number9
DOIs
Publication statusPublished - 1992
Externally publishedYes

Fingerprint

laser arrays
thresholds
Lasers
Substrates
threshold currents
compatibility
lasers
metalorganic chemical vapor deposition
slopes
Organic Chemicals
Organic chemicals
Chemical vapor deposition
Metals
Networks (circuits)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Physics and Astronomy (miscellaneous)

Cite this

Low-Threshold (3.2 mA per Element) 1.3 μm InGaAsP MQW Laser Array on a p-Type Substrate. / Yamashita, S.; Oka, A.; Kawano, Toshihiro; Tsuchiya, T.; Saitoh, K.; Uomi, K.; Ono, Y.

In: IEEE Photonics Technology Letters, Vol. 4, No. 9, 1992, p. 954-957.

Research output: Contribution to journalArticle

Yamashita, S. ; Oka, A. ; Kawano, Toshihiro ; Tsuchiya, T. ; Saitoh, K. ; Uomi, K. ; Ono, Y. / Low-Threshold (3.2 mA per Element) 1.3 μm InGaAsP MQW Laser Array on a p-Type Substrate. In: IEEE Photonics Technology Letters. 1992 ; Vol. 4, No. 9. pp. 954-957.
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