LOW-THRESHOLD-CURRENT DISTRIBUTED-FEEBACK InGaAsP/InP cw LASERS.

S. Akiba, Katsuyuki Utaka, K. Sakai, Yuichi Matsushima

Research output: Contribution to journalArticle

32 Citations (Scopus)

Abstract

Distributed-feedback buried-heterostructure InGaAsP/InP lasers with room temperature cw threshold current as low as 50 ma, corresponding to a current density of 2. 3 Ka/cm**2, are presented. CW operation in the temperauture range from minus 20 degree C to 58 degree C was confirmed.

Original languageEnglish
Pages (from-to)77-78
Number of pages2
JournalElectronics Letters
Volume18
Issue number2
Publication statusPublished - 1982 Jan 1
Externally publishedYes

Fingerprint

Heterojunctions
Current density
Feedback
Lasers
Temperature

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Akiba, S., Utaka, K., Sakai, K., & Matsushima, Y. (1982). LOW-THRESHOLD-CURRENT DISTRIBUTED-FEEBACK InGaAsP/InP cw LASERS. Electronics Letters, 18(2), 77-78.

LOW-THRESHOLD-CURRENT DISTRIBUTED-FEEBACK InGaAsP/InP cw LASERS. / Akiba, S.; Utaka, Katsuyuki; Sakai, K.; Matsushima, Yuichi.

In: Electronics Letters, Vol. 18, No. 2, 01.01.1982, p. 77-78.

Research output: Contribution to journalArticle

Akiba, S, Utaka, K, Sakai, K & Matsushima, Y 1982, 'LOW-THRESHOLD-CURRENT DISTRIBUTED-FEEBACK InGaAsP/InP cw LASERS.', Electronics Letters, vol. 18, no. 2, pp. 77-78.
Akiba, S. ; Utaka, Katsuyuki ; Sakai, K. ; Matsushima, Yuichi. / LOW-THRESHOLD-CURRENT DISTRIBUTED-FEEBACK InGaAsP/InP cw LASERS. In: Electronics Letters. 1982 ; Vol. 18, No. 2. pp. 77-78.
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