TY - JOUR
T1 - Low-voltage operation of ink-jet-printed single-walled carbon nanotube thin film transistors
AU - Okimoto, Haruya
AU - Takenobu, Taishi
AU - Yanagi, Kazuhiro
AU - Shimotani, Hizekazu
AU - Miyata, Yasumitsu
AU - Kataura, Hiromichi
AU - Iwasa, Yoshihiro
PY - 2010
Y1 - 2010
N2 - We demonstrate a low-voltage and less hysteresis operation of single-walled carbon nanotube thin film transistors (SWCNT-TFTs) using an ionic liquid gate dielectric layer. We fabricated the density controlled SWCNT-TFTs using the inkjet printing technique, where both source/drain electrodes and the semiconducting transistor channel were made from SWCNT films. As the gate dielectric, we have adopted a printable ionic liquid for future all-printable processes and achieved marked improvements in operating voltages and hysteretic response.
AB - We demonstrate a low-voltage and less hysteresis operation of single-walled carbon nanotube thin film transistors (SWCNT-TFTs) using an ionic liquid gate dielectric layer. We fabricated the density controlled SWCNT-TFTs using the inkjet printing technique, where both source/drain electrodes and the semiconducting transistor channel were made from SWCNT films. As the gate dielectric, we have adopted a printable ionic liquid for future all-printable processes and achieved marked improvements in operating voltages and hysteretic response.
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U2 - 10.1143/JJAP.49.02BD09
DO - 10.1143/JJAP.49.02BD09
M3 - Article
AN - SCOPUS:79955528347
SN - 0021-4922
VL - 49
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 2 PART 2
M1 - 02BD09
ER -