Low-voltage organic field-effect transistors with a gate insulator of Ta2O5 formed by sputtering

Heisuke Sakai, Yukio Furukawa*, Eiichi Fujiwara, Hirokazu Tada

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)


The Ta2O5 film prepared on silicon by RF sputtering has been used as a gate insulator for the top-contact field-effect transistors fabricated with poly(2-methoxy-5-(2′-ethylhexyloxy)-1,4-phenylenevinylene) (MEH-PPV) or pentacene. Good transistor characteristics have been obtained with saturation at low drive voltages (about -3 V) and with hole mobilities of 5.2 × 10-4 cm2/Vs (MEH-PPV) and 0.8 cm2/Vs (pentacene).

Original languageEnglish
Pages (from-to)1172-1173
Number of pages2
JournalChemistry Letters
Issue number9
Publication statusPublished - 2004 Sep 5

ASJC Scopus subject areas

  • Chemistry(all)


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