LPE growth of low doped n-type 4H-SiC layer on on-axis substrate for power device application

R. Hattori, K. Kamei, K. Kusunoki, N. Yashiro, S. Shimosaki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

LPE (liquid phase epitaxy) growth of low nitrogen unintentionally doped SiC epitaxial layer on on-axis 4H-SiC substrate using nitrogen getter Si based solution was investigated to realize basal plane dislocation (BPD) free epitaxial layer. A significant reduction in BPD was demonstrated.

Original languageEnglish
Title of host publicationMaterials Science Forum
Pages141-144
Number of pages4
Volume615 617
DOIs
Publication statusPublished - 2009
Externally publishedYes
Event7th European Conference on Silicon Carbide and Related Materials, ECSCRM 2008 - Barcelona, Spain
Duration: 2008 Sep 72008 Sep 11

Publication series

NameMaterials Science Forum
Volume615 617
ISSN (Print)02555476

Other

Other7th European Conference on Silicon Carbide and Related Materials, ECSCRM 2008
CountrySpain
CityBarcelona
Period08/9/708/9/11

Fingerprint

Liquid phase epitaxy
Epitaxial layers
liquid phase epitaxy
Dislocations (crystals)
Nitrogen
nitrogen
Substrates

Keywords

  • Basal plane dislocations
  • LPE
  • Nitrogen
  • On-axis
  • SiC
  • Solution growth
  • Solvent
  • Stacking fault

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Hattori, R., Kamei, K., Kusunoki, K., Yashiro, N., & Shimosaki, S. (2009). LPE growth of low doped n-type 4H-SiC layer on on-axis substrate for power device application. In Materials Science Forum (Vol. 615 617, pp. 141-144). (Materials Science Forum; Vol. 615 617). https://doi.org/10.4028/www.scientific.net/MSF.615-617.141

LPE growth of low doped n-type 4H-SiC layer on on-axis substrate for power device application. / Hattori, R.; Kamei, K.; Kusunoki, K.; Yashiro, N.; Shimosaki, S.

Materials Science Forum. Vol. 615 617 2009. p. 141-144 (Materials Science Forum; Vol. 615 617).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hattori, R, Kamei, K, Kusunoki, K, Yashiro, N & Shimosaki, S 2009, LPE growth of low doped n-type 4H-SiC layer on on-axis substrate for power device application. in Materials Science Forum. vol. 615 617, Materials Science Forum, vol. 615 617, pp. 141-144, 7th European Conference on Silicon Carbide and Related Materials, ECSCRM 2008, Barcelona, Spain, 08/9/7. https://doi.org/10.4028/www.scientific.net/MSF.615-617.141
Hattori R, Kamei K, Kusunoki K, Yashiro N, Shimosaki S. LPE growth of low doped n-type 4H-SiC layer on on-axis substrate for power device application. In Materials Science Forum. Vol. 615 617. 2009. p. 141-144. (Materials Science Forum). https://doi.org/10.4028/www.scientific.net/MSF.615-617.141
Hattori, R. ; Kamei, K. ; Kusunoki, K. ; Yashiro, N. ; Shimosaki, S. / LPE growth of low doped n-type 4H-SiC layer on on-axis substrate for power device application. Materials Science Forum. Vol. 615 617 2009. pp. 141-144 (Materials Science Forum).
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