LPE growth of low doped n-type 4H-SiC layer on on-axis substrate for power device application

R. Hattori, K. Kamei, K. Kusunoki, N. Yashiro, S. Shimosaki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

LPE (liquid phase epitaxy) growth of low nitrogen unintentionally doped SiC epitaxial layer on on-axis 4H-SiC substrate using nitrogen getter Si based solution was investigated to realize basal plane dislocation (BPD) free epitaxial layer. A significant reduction in BPD was demonstrated.

Original languageEnglish
Title of host publicationMaterials Science Forum
Pages141-144
Number of pages4
Volume615 617
DOIs
Publication statusPublished - 2009
Externally publishedYes
Event7th European Conference on Silicon Carbide and Related Materials, ECSCRM 2008 - Barcelona, Spain
Duration: 2008 Sep 72008 Sep 11

Publication series

NameMaterials Science Forum
Volume615 617
ISSN (Print)02555476

Other

Other7th European Conference on Silicon Carbide and Related Materials, ECSCRM 2008
CountrySpain
CityBarcelona
Period08/9/708/9/11

Keywords

  • Basal plane dislocations
  • LPE
  • Nitrogen
  • On-axis
  • SiC
  • Solution growth
  • Solvent
  • Stacking fault

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

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