Luminescence and semiconducting properties of plasma CVD diamond

H. Kawarada; Y. Yokota; Y. Mori; A. Tomiyama; J. S. Ma; J. Wei; J. Suzuki; A. Hiraki

doi:10.1016/0042-207X(90)93812-W

Luminescence and semiconducting properties of plasma CVD diamond

H. Kawarada^*, Y. Yokota, Y. Mori, A. Tomiyama, J. S. Ma, J. Wei, J. Suzuki, A. Hiraki

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Chemical vapor deposition (CVD) of diamond has the advantage of enlarging the applications of semiconducting diamond. The rectifying properties of Schottky diodes of polycrystalline CVD diamonds are equivalent to those of bulk diamonds. The breakdown voltage is more than 100V in polycrystalline phase. The dominant cathodoluminescence center in CVD diamond is in the blue region of 2.6-3.0 eV and has the same properties as those observe in the Band A luminescence of natural type IIa (insulating) or type IIb (semiconducting) diamond. The electroluminescence has been also observed in boron-doped CVD diamonds. Using selective nucleation and growth, a new type of crystal growth suitable for CVD diamond, where hetero-epitaxial growth has been hardly achieved, has been developed as an advanced material fabrication based on CVD.

Original language	English
Pages (from-to)	885-888
Number of pages	4
Journal	Vacuum
Volume	41
Issue number	4-6
DOIs	https://doi.org/10.1016/0042-207X(90)93812-W
Publication status	Published - 1990
Externally published	Yes

ASJC Scopus subject areas

Instrumentation
Condensed Matter Physics
Surfaces, Coatings and Films

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10.1016/0042-207X(90)93812-W

Cite this

@article{19e53ea874a74ef4be777d6387cc9b28,

title = "Luminescence and semiconducting properties of plasma CVD diamond",

abstract = "Chemical vapor deposition (CVD) of diamond has the advantage of enlarging the applications of semiconducting diamond. The rectifying properties of Schottky diodes of polycrystalline CVD diamonds are equivalent to those of bulk diamonds. The breakdown voltage is more than 100V in polycrystalline phase. The dominant cathodoluminescence center in CVD diamond is in the blue region of 2.6-3.0 eV and has the same properties as those observe in the Band A luminescence of natural type IIa (insulating) or type IIb (semiconducting) diamond. The electroluminescence has been also observed in boron-doped CVD diamonds. Using selective nucleation and growth, a new type of crystal growth suitable for CVD diamond, where hetero-epitaxial growth has been hardly achieved, has been developed as an advanced material fabrication based on CVD.",

author = "H. Kawarada and Y. Yokota and Y. Mori and A. Tomiyama and Ma, {J. S.} and J. Wei and J. Suzuki and A. Hiraki",

note = "Funding Information: The authors are grateful to Osaka Diamond Industrial Co, especially to Mr K Nishimura, Shimadzu Co, Cannon Inc, especially to Dr T Yonehara, Kyocera Corp, and Idemitsu Petrochemical Inc, for technical support. This work was supported in part by a Grant-in-Aid for Developmental Scientific Research (63850008) for the Ministry of Eduction, Science and Culture of Japan.",

year = "1990",

doi = "10.1016/0042-207X(90)93812-W",

language = "English",

volume = "41",

pages = "885--888",

journal = "Vacuum",

issn = "0042-207X",

publisher = "Elsevier Limited",

number = "4-6",

}

TY - JOUR

T1 - Luminescence and semiconducting properties of plasma CVD diamond

AU - Kawarada, H.

AU - Yokota, Y.

AU - Mori, Y.

AU - Tomiyama, A.

AU - Ma, J. S.

AU - Wei, J.

AU - Suzuki, J.

AU - Hiraki, A.

N1 - Funding Information: The authors are grateful to Osaka Diamond Industrial Co, especially to Mr K Nishimura, Shimadzu Co, Cannon Inc, especially to Dr T Yonehara, Kyocera Corp, and Idemitsu Petrochemical Inc, for technical support. This work was supported in part by a Grant-in-Aid for Developmental Scientific Research (63850008) for the Ministry of Eduction, Science and Culture of Japan.

PY - 1990

Y1 - 1990

N2 - Chemical vapor deposition (CVD) of diamond has the advantage of enlarging the applications of semiconducting diamond. The rectifying properties of Schottky diodes of polycrystalline CVD diamonds are equivalent to those of bulk diamonds. The breakdown voltage is more than 100V in polycrystalline phase. The dominant cathodoluminescence center in CVD diamond is in the blue region of 2.6-3.0 eV and has the same properties as those observe in the Band A luminescence of natural type IIa (insulating) or type IIb (semiconducting) diamond. The electroluminescence has been also observed in boron-doped CVD diamonds. Using selective nucleation and growth, a new type of crystal growth suitable for CVD diamond, where hetero-epitaxial growth has been hardly achieved, has been developed as an advanced material fabrication based on CVD.

AB - Chemical vapor deposition (CVD) of diamond has the advantage of enlarging the applications of semiconducting diamond. The rectifying properties of Schottky diodes of polycrystalline CVD diamonds are equivalent to those of bulk diamonds. The breakdown voltage is more than 100V in polycrystalline phase. The dominant cathodoluminescence center in CVD diamond is in the blue region of 2.6-3.0 eV and has the same properties as those observe in the Band A luminescence of natural type IIa (insulating) or type IIb (semiconducting) diamond. The electroluminescence has been also observed in boron-doped CVD diamonds. Using selective nucleation and growth, a new type of crystal growth suitable for CVD diamond, where hetero-epitaxial growth has been hardly achieved, has been developed as an advanced material fabrication based on CVD.

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U2 - 10.1016/0042-207X(90)93812-W

DO - 10.1016/0042-207X(90)93812-W

M3 - Article

AN - SCOPUS:0025561086

SN - 0042-207X

VL - 41

SP - 885

EP - 888

JO - Vacuum

JF - Vacuum

IS - 4-6

ER -

Luminescence and semiconducting properties of plasma CVD diamond

Abstract

ASJC Scopus subject areas

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