Luminescence energy shift and carrier lifetime change dependence on carrier density in In0.12Ga0.88N/In0.03Ga0.97N quantum wells

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    Abstract

    To clarify the carrier density dependence of carrier lifetime and luminescence energy, we have performed a systematic study of time-resolved photoluminescence (PL) measurements of In0.12Ga0.88N/In0.03Ga0.97N multiple quantum wells for various carrier density. The carrier recombination rate and the PL energy, for the carrier density below 1.5× 1018cm-3, are found to decrease nonlinearly with the decrease of the carrier density, although the carrier lifetime is constant and the PL energy shifts linearly for carrier density above this value. We show that the energy shift for the small carrier density and the change in the carrier lifetime are well explained by the free carrier screening effect which compensates the internal electric field. The linear energy shift for the high carrier density is attributed to the band-filling effect.

    Original languageEnglish
    Pages (from-to)3753-3755
    Number of pages3
    JournalApplied Physics Letters
    Volume76
    Issue number25
    Publication statusPublished - 2000 Jun 19

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    carrier lifetime
    quantum wells
    luminescence
    life (durability)
    shift
    energy
    photoluminescence
    screening
    electric fields

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this

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    title = "Luminescence energy shift and carrier lifetime change dependence on carrier density in In0.12Ga0.88N/In0.03Ga0.97N quantum wells",
    abstract = "To clarify the carrier density dependence of carrier lifetime and luminescence energy, we have performed a systematic study of time-resolved photoluminescence (PL) measurements of In0.12Ga0.88N/In0.03Ga0.97N multiple quantum wells for various carrier density. The carrier recombination rate and the PL energy, for the carrier density below 1.5× 1018cm-3, are found to decrease nonlinearly with the decrease of the carrier density, although the carrier lifetime is constant and the PL energy shifts linearly for carrier density above this value. We show that the energy shift for the small carrier density and the change in the carrier lifetime are well explained by the free carrier screening effect which compensates the internal electric field. The linear energy shift for the high carrier density is attributed to the band-filling effect.",
    author = "Takamasa Kuroda and Atsushi Tackeuchi and Takayuki Sota",
    year = "2000",
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    pages = "3753--3755",
    journal = "Applied Physics Letters",
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    TY - JOUR

    T1 - Luminescence energy shift and carrier lifetime change dependence on carrier density in In0.12Ga0.88N/In0.03Ga0.97N quantum wells

    AU - Kuroda, Takamasa

    AU - Tackeuchi, Atsushi

    AU - Sota, Takayuki

    PY - 2000/6/19

    Y1 - 2000/6/19

    N2 - To clarify the carrier density dependence of carrier lifetime and luminescence energy, we have performed a systematic study of time-resolved photoluminescence (PL) measurements of In0.12Ga0.88N/In0.03Ga0.97N multiple quantum wells for various carrier density. The carrier recombination rate and the PL energy, for the carrier density below 1.5× 1018cm-3, are found to decrease nonlinearly with the decrease of the carrier density, although the carrier lifetime is constant and the PL energy shifts linearly for carrier density above this value. We show that the energy shift for the small carrier density and the change in the carrier lifetime are well explained by the free carrier screening effect which compensates the internal electric field. The linear energy shift for the high carrier density is attributed to the band-filling effect.

    AB - To clarify the carrier density dependence of carrier lifetime and luminescence energy, we have performed a systematic study of time-resolved photoluminescence (PL) measurements of In0.12Ga0.88N/In0.03Ga0.97N multiple quantum wells for various carrier density. The carrier recombination rate and the PL energy, for the carrier density below 1.5× 1018cm-3, are found to decrease nonlinearly with the decrease of the carrier density, although the carrier lifetime is constant and the PL energy shifts linearly for carrier density above this value. We show that the energy shift for the small carrier density and the change in the carrier lifetime are well explained by the free carrier screening effect which compensates the internal electric field. The linear energy shift for the high carrier density is attributed to the band-filling effect.

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