Luminescence properties of CdS quantum dots on ZnSe

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Abstract

The luminescence properties of self-assembled CdS quantum dots (QDs) were studied. CdS QD structures formed on ZnSe buffer layers without capping layers showed intense photoluminescence (PL). The PL peak position could be controlled by changing the amount of CdS deposited. Introduction of the capping layer enhanced the PL intensity. The buffer layer material selected also affected the luminescence properties of the CdS QDs, and brighter PL with the higher transition energy was observed by replacing the ZnSe buffer layer with ZnSSe. A light emitting diode structure based on CdS QDs sandwiched in the pn junction of ZnSe was fabricated and bright blue or green luminescence from current injection was observed at 77 K as well as at room temperature.

Original languageEnglish
Pages (from-to)2005-2008
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume17
Issue number5
Publication statusPublished - 1999
Externally publishedYes

Fingerprint

Semiconductor quantum dots
Luminescence
Photoluminescence
Buffer layers
quantum dots
luminescence
photoluminescence
buffers
Light emitting diodes
light emitting diodes
injection
room temperature
Temperature
energy

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)
  • Surfaces and Interfaces

Cite this

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abstract = "The luminescence properties of self-assembled CdS quantum dots (QDs) were studied. CdS QD structures formed on ZnSe buffer layers without capping layers showed intense photoluminescence (PL). The PL peak position could be controlled by changing the amount of CdS deposited. Introduction of the capping layer enhanced the PL intensity. The buffer layer material selected also affected the luminescence properties of the CdS QDs, and brighter PL with the higher transition energy was observed by replacing the ZnSe buffer layer with ZnSSe. A light emitting diode structure based on CdS QDs sandwiched in the pn junction of ZnSe was fabricated and bright blue or green luminescence from current injection was observed at 77 K as well as at room temperature.",
author = "Masakazu Kobayashi",
year = "1999",
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volume = "17",
pages = "2005--2008",
journal = "Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena",
issn = "1071-1023",
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T1 - Luminescence properties of CdS quantum dots on ZnSe

AU - Kobayashi, Masakazu

PY - 1999

Y1 - 1999

N2 - The luminescence properties of self-assembled CdS quantum dots (QDs) were studied. CdS QD structures formed on ZnSe buffer layers without capping layers showed intense photoluminescence (PL). The PL peak position could be controlled by changing the amount of CdS deposited. Introduction of the capping layer enhanced the PL intensity. The buffer layer material selected also affected the luminescence properties of the CdS QDs, and brighter PL with the higher transition energy was observed by replacing the ZnSe buffer layer with ZnSSe. A light emitting diode structure based on CdS QDs sandwiched in the pn junction of ZnSe was fabricated and bright blue or green luminescence from current injection was observed at 77 K as well as at room temperature.

AB - The luminescence properties of self-assembled CdS quantum dots (QDs) were studied. CdS QD structures formed on ZnSe buffer layers without capping layers showed intense photoluminescence (PL). The PL peak position could be controlled by changing the amount of CdS deposited. Introduction of the capping layer enhanced the PL intensity. The buffer layer material selected also affected the luminescence properties of the CdS QDs, and brighter PL with the higher transition energy was observed by replacing the ZnSe buffer layer with ZnSSe. A light emitting diode structure based on CdS QDs sandwiched in the pn junction of ZnSe was fabricated and bright blue or green luminescence from current injection was observed at 77 K as well as at room temperature.

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VL - 17

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JO - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

JF - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

SN - 1071-1023

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