Luminescence properties of defects in P+- or B+-implanted thermally grown silicon dioxide

K. S. Seol, A. Ieki, Yoshimichi Ohki, H. Nishikawa, M. Takiyama

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    3 Citations (Scopus)

    Abstract

    The photoluminescence (PL) spectra from P+- or B+-implanted thermally grown film obtained by synchrotron radiation and excimer laser are studied and the nature of the defects induced by the ion implantation is discussed. Results show that under the excitation of KrF excimer laser, three PL bands at 4.3 eV, 2.7 eV, and 1.9 eV are observed. As for the PL bands at 4.3 eV and 1.9 eV, the intensity increases with a decrease in the temperature, while it decreases for the PL at 2.7 eV. From the similarities of the temperature dependence and the decay profile between the present ion-implanted SiO2 film and the well-identified bulk silica glass, the two PL bands at 4.3 eV and 2.7 eV are attributable to the oxygen vacancy, while the PL at 1.9 eV is from NBOHC.

    Original languageEnglish
    Title of host publicationProceedings of the Symposium on Electrical Insulating Materials
    Place of PublicationTokyo, Japan
    PublisherInst of Electrical Engineers of Japan
    Pages85-88
    Number of pages4
    Publication statusPublished - 1995
    EventProceedings of the 1995 International Symposium on Electrical Insulating Materials - Tokyo, Jpn
    Duration: 1995 Sep 171995 Sep 20

    Other

    OtherProceedings of the 1995 International Symposium on Electrical Insulating Materials
    CityTokyo, Jpn
    Period95/9/1795/9/20

    Fingerprint

    Luminescence
    Photoluminescence
    Silica
    Defects
    Excimer lasers
    Oxygen vacancies
    Fused silica
    Synchrotron radiation
    Ion implantation
    Temperature
    Ions

    ASJC Scopus subject areas

    • Engineering(all)

    Cite this

    Seol, K. S., Ieki, A., Ohki, Y., Nishikawa, H., & Takiyama, M. (1995). Luminescence properties of defects in P+- or B+-implanted thermally grown silicon dioxide. In Proceedings of the Symposium on Electrical Insulating Materials (pp. 85-88). Tokyo, Japan: Inst of Electrical Engineers of Japan.

    Luminescence properties of defects in P+- or B+-implanted thermally grown silicon dioxide. / Seol, K. S.; Ieki, A.; Ohki, Yoshimichi; Nishikawa, H.; Takiyama, M.

    Proceedings of the Symposium on Electrical Insulating Materials. Tokyo, Japan : Inst of Electrical Engineers of Japan, 1995. p. 85-88.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Seol, KS, Ieki, A, Ohki, Y, Nishikawa, H & Takiyama, M 1995, Luminescence properties of defects in P+- or B+-implanted thermally grown silicon dioxide. in Proceedings of the Symposium on Electrical Insulating Materials. Inst of Electrical Engineers of Japan, Tokyo, Japan, pp. 85-88, Proceedings of the 1995 International Symposium on Electrical Insulating Materials, Tokyo, Jpn, 95/9/17.
    Seol KS, Ieki A, Ohki Y, Nishikawa H, Takiyama M. Luminescence properties of defects in P+- or B+-implanted thermally grown silicon dioxide. In Proceedings of the Symposium on Electrical Insulating Materials. Tokyo, Japan: Inst of Electrical Engineers of Japan. 1995. p. 85-88
    Seol, K. S. ; Ieki, A. ; Ohki, Yoshimichi ; Nishikawa, H. ; Takiyama, M. / Luminescence properties of defects in P+- or B+-implanted thermally grown silicon dioxide. Proceedings of the Symposium on Electrical Insulating Materials. Tokyo, Japan : Inst of Electrical Engineers of Japan, 1995. pp. 85-88
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    abstract = "The photoluminescence (PL) spectra from P+- or B+-implanted thermally grown film obtained by synchrotron radiation and excimer laser are studied and the nature of the defects induced by the ion implantation is discussed. Results show that under the excitation of KrF excimer laser, three PL bands at 4.3 eV, 2.7 eV, and 1.9 eV are observed. As for the PL bands at 4.3 eV and 1.9 eV, the intensity increases with a decrease in the temperature, while it decreases for the PL at 2.7 eV. From the similarities of the temperature dependence and the decay profile between the present ion-implanted SiO2 film and the well-identified bulk silica glass, the two PL bands at 4.3 eV and 2.7 eV are attributable to the oxygen vacancy, while the PL at 1.9 eV is from NBOHC.",
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    AU - Seol, K. S.

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    AU - Ohki, Yoshimichi

    AU - Nishikawa, H.

    AU - Takiyama, M.

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    N2 - The photoluminescence (PL) spectra from P+- or B+-implanted thermally grown film obtained by synchrotron radiation and excimer laser are studied and the nature of the defects induced by the ion implantation is discussed. Results show that under the excitation of KrF excimer laser, three PL bands at 4.3 eV, 2.7 eV, and 1.9 eV are observed. As for the PL bands at 4.3 eV and 1.9 eV, the intensity increases with a decrease in the temperature, while it decreases for the PL at 2.7 eV. From the similarities of the temperature dependence and the decay profile between the present ion-implanted SiO2 film and the well-identified bulk silica glass, the two PL bands at 4.3 eV and 2.7 eV are attributable to the oxygen vacancy, while the PL at 1.9 eV is from NBOHC.

    AB - The photoluminescence (PL) spectra from P+- or B+-implanted thermally grown film obtained by synchrotron radiation and excimer laser are studied and the nature of the defects induced by the ion implantation is discussed. Results show that under the excitation of KrF excimer laser, three PL bands at 4.3 eV, 2.7 eV, and 1.9 eV are observed. As for the PL bands at 4.3 eV and 1.9 eV, the intensity increases with a decrease in the temperature, while it decreases for the PL at 2.7 eV. From the similarities of the temperature dependence and the decay profile between the present ion-implanted SiO2 film and the well-identified bulk silica glass, the two PL bands at 4.3 eV and 2.7 eV are attributable to the oxygen vacancy, while the PL at 1.9 eV is from NBOHC.

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