Luminescence properties of sol-gel synthesized silica glass induced by an ArF excimer laser

K. Mukasa, M. Ono, R. Wakabayashi, K. Ishii, Yoshimichi Ohki, H. Nishikawa

    Research output: Contribution to journalArticle

    4 Citations (Scopus)

    Abstract

    When sol-gel synthesized silica glass containing about 260 ppm of OH groups is irradiated with an ArF excimer laser, photoluminescence appears at 1.9 eV (650 nm). From measurements of luminescence lifetime, the absorption spectrum and electron-spin-resonance spectroscopy, the luminescence is thought to be due to a non-bridging oxygen hole centre, a kind of point defect in silica glass.

    Original languageEnglish
    Pages (from-to)283-285
    Number of pages3
    JournalJournal of Physics D: Applied Physics
    Volume30
    Issue number2
    DOIs
    Publication statusPublished - 1997 Jan 21

    Fingerprint

    silica glass
    Excimer lasers
    Fused silica
    excimer lasers
    Sol-gels
    Luminescence
    gels
    luminescence
    Electron spin resonance spectroscopy
    Point defects
    point defects
    Absorption spectra
    electron paramagnetic resonance
    Photoluminescence
    Oxygen
    absorption spectra
    photoluminescence
    life (durability)
    oxygen
    spectroscopy

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this

    Luminescence properties of sol-gel synthesized silica glass induced by an ArF excimer laser. / Mukasa, K.; Ono, M.; Wakabayashi, R.; Ishii, K.; Ohki, Yoshimichi; Nishikawa, H.

    In: Journal of Physics D: Applied Physics, Vol. 30, No. 2, 21.01.1997, p. 283-285.

    Research output: Contribution to journalArticle

    Mukasa, K. ; Ono, M. ; Wakabayashi, R. ; Ishii, K. ; Ohki, Yoshimichi ; Nishikawa, H. / Luminescence properties of sol-gel synthesized silica glass induced by an ArF excimer laser. In: Journal of Physics D: Applied Physics. 1997 ; Vol. 30, No. 2. pp. 283-285.
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    AU - Ohki, Yoshimichi

    AU - Nishikawa, H.

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