Luminescence spectra from InGaN multiquantum wells heavily doped with Si

T. Deguchi, A. Shikanai, K. Torii, Takayuki Sota, S. Chichibu, S. Nakamura

    Research output: Contribution to journalArticle

    84 Citations (Scopus)

    Abstract

    A systematic study has been carried out on emission spectra of heavily Si-doped InGaN multiquantum wells with different degree of potential fluctuation of InGaN in the lateral plane by the use of the various excitation sources. It is demonstrated that the quantum-confined Stark effect due to the piezoelectric field plays no serious role in optical spectra under appropriate doping conditions and, then, the degree of potential fluctuation of InGaN alloys is clearly reflected in spontaneous emission spectra.

    Original languageEnglish
    Pages (from-to)3329-3331
    Number of pages3
    JournalApplied Physics Letters
    Volume72
    Issue number25
    DOIs
    Publication statusPublished - 1998

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    emission spectra
    luminescence
    Stark effect
    spontaneous emission
    optical spectrum
    excitation

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this

    Deguchi, T., Shikanai, A., Torii, K., Sota, T., Chichibu, S., & Nakamura, S. (1998). Luminescence spectra from InGaN multiquantum wells heavily doped with Si. Applied Physics Letters, 72(25), 3329-3331. https://doi.org/10.1063/1.121594

    Luminescence spectra from InGaN multiquantum wells heavily doped with Si. / Deguchi, T.; Shikanai, A.; Torii, K.; Sota, Takayuki; Chichibu, S.; Nakamura, S.

    In: Applied Physics Letters, Vol. 72, No. 25, 1998, p. 3329-3331.

    Research output: Contribution to journalArticle

    Deguchi, T, Shikanai, A, Torii, K, Sota, T, Chichibu, S & Nakamura, S 1998, 'Luminescence spectra from InGaN multiquantum wells heavily doped with Si', Applied Physics Letters, vol. 72, no. 25, pp. 3329-3331. https://doi.org/10.1063/1.121594
    Deguchi, T. ; Shikanai, A. ; Torii, K. ; Sota, Takayuki ; Chichibu, S. ; Nakamura, S. / Luminescence spectra from InGaN multiquantum wells heavily doped with Si. In: Applied Physics Letters. 1998 ; Vol. 72, No. 25. pp. 3329-3331.
    @article{c4ec1355065849518f39be407d8dfe2b,
    title = "Luminescence spectra from InGaN multiquantum wells heavily doped with Si",
    abstract = "A systematic study has been carried out on emission spectra of heavily Si-doped InGaN multiquantum wells with different degree of potential fluctuation of InGaN in the lateral plane by the use of the various excitation sources. It is demonstrated that the quantum-confined Stark effect due to the piezoelectric field plays no serious role in optical spectra under appropriate doping conditions and, then, the degree of potential fluctuation of InGaN alloys is clearly reflected in spontaneous emission spectra.",
    author = "T. Deguchi and A. Shikanai and K. Torii and Takayuki Sota and S. Chichibu and S. Nakamura",
    year = "1998",
    doi = "10.1063/1.121594",
    language = "English",
    volume = "72",
    pages = "3329--3331",
    journal = "Applied Physics Letters",
    issn = "0003-6951",
    publisher = "American Institute of Physics Publising LLC",
    number = "25",

    }

    TY - JOUR

    T1 - Luminescence spectra from InGaN multiquantum wells heavily doped with Si

    AU - Deguchi, T.

    AU - Shikanai, A.

    AU - Torii, K.

    AU - Sota, Takayuki

    AU - Chichibu, S.

    AU - Nakamura, S.

    PY - 1998

    Y1 - 1998

    N2 - A systematic study has been carried out on emission spectra of heavily Si-doped InGaN multiquantum wells with different degree of potential fluctuation of InGaN in the lateral plane by the use of the various excitation sources. It is demonstrated that the quantum-confined Stark effect due to the piezoelectric field plays no serious role in optical spectra under appropriate doping conditions and, then, the degree of potential fluctuation of InGaN alloys is clearly reflected in spontaneous emission spectra.

    AB - A systematic study has been carried out on emission spectra of heavily Si-doped InGaN multiquantum wells with different degree of potential fluctuation of InGaN in the lateral plane by the use of the various excitation sources. It is demonstrated that the quantum-confined Stark effect due to the piezoelectric field plays no serious role in optical spectra under appropriate doping conditions and, then, the degree of potential fluctuation of InGaN alloys is clearly reflected in spontaneous emission spectra.

    UR - http://www.scopus.com/inward/record.url?scp=0001391803&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=0001391803&partnerID=8YFLogxK

    U2 - 10.1063/1.121594

    DO - 10.1063/1.121594

    M3 - Article

    AN - SCOPUS:0001391803

    VL - 72

    SP - 3329

    EP - 3331

    JO - Applied Physics Letters

    JF - Applied Physics Letters

    SN - 0003-6951

    IS - 25

    ER -