Luminescence spectra from InGaN multiquantum wells heavily doped with Si

T. Deguchi, A. Shikanai, K. Torii, T. Sota, S. Chichibu, S. Nakamura

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Abstract

A systematic study has been carried out on emission spectra of heavily Si-doped InGaN multiquantum wells with different degree of potential fluctuation of InGaN in the lateral plane by the use of the various excitation sources. It is demonstrated that the quantum-confined Stark effect due to the piezoelectric field plays no serious role in optical spectra under appropriate doping conditions and, then, the degree of potential fluctuation of InGaN alloys is clearly reflected in spontaneous emission spectra.

Original languageEnglish
Pages (from-to)3329-3331
Number of pages3
JournalApplied Physics Letters
Volume72
Issue number25
DOIs
Publication statusPublished - 1998 Dec 1

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Deguchi, T., Shikanai, A., Torii, K., Sota, T., Chichibu, S., & Nakamura, S. (1998). Luminescence spectra from InGaN multiquantum wells heavily doped with Si. Applied Physics Letters, 72(25), 3329-3331. https://doi.org/10.1063/1.121594