Luminescences from localized states in InGaN epilayers

S. Chichibu; T. Azuhata; T. Sota; S. Nakamura

doi:10.1063/1.119013

Luminescences from localized states in InGaN epilayers

S. Chichibu^*, T. Azuhata, T. Sota, S. Nakamura

^*Corresponding author for this work

School of Advanced Science and Engineering

Research output: Contribution to journal › Article › peer-review

425 Citations (Scopus)

Abstract

Optical spectra of the bulk three-dimensional InGaN alloys were measured using the commercially available light-emitting diode devices and their wafers. The emission from undoped In_xGa_1-xN (x<0.1) was assigned to the recombination of excitons localized at the potential minima originating from the large compositional fluctuation. The emission from heavily impurity-doped InGaN was also pointed out related to the localized states.

Original language	English
Pages (from-to)	2822-2824
Number of pages	3
Journal	Applied Physics Letters
Volume	70
Issue number	21
DOIs	https://doi.org/10.1063/1.119013
Publication status	Published - 1997 May 26

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.119013

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title = "Luminescences from localized states in InGaN epilayers",

abstract = "Optical spectra of the bulk three-dimensional InGaN alloys were measured using the commercially available light-emitting diode devices and their wafers. The emission from undoped InxGa1-xN (x<0.1) was assigned to the recombination of excitons localized at the potential minima originating from the large compositional fluctuation. The emission from heavily impurity-doped InGaN was also pointed out related to the localized states.",

author = "S. Chichibu and T. Azuhata and T. Sota and S. Nakamura",

year = "1997",

month = may,

day = "26",

doi = "10.1063/1.119013",

language = "English",

volume = "70",

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journal = "Applied Physics Letters",

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T1 - Luminescences from localized states in InGaN epilayers

AU - Chichibu, S.

AU - Azuhata, T.

AU - Sota, T.

AU - Nakamura, S.

PY - 1997/5/26

Y1 - 1997/5/26

N2 - Optical spectra of the bulk three-dimensional InGaN alloys were measured using the commercially available light-emitting diode devices and their wafers. The emission from undoped InxGa1-xN (x<0.1) was assigned to the recombination of excitons localized at the potential minima originating from the large compositional fluctuation. The emission from heavily impurity-doped InGaN was also pointed out related to the localized states.

AB - Optical spectra of the bulk three-dimensional InGaN alloys were measured using the commercially available light-emitting diode devices and their wafers. The emission from undoped InxGa1-xN (x<0.1) was assigned to the recombination of excitons localized at the potential minima originating from the large compositional fluctuation. The emission from heavily impurity-doped InGaN was also pointed out related to the localized states.

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DO - 10.1063/1.119013

M3 - Article

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Luminescences from localized states in InGaN epilayers

Abstract

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