Luminescences from localized states in InGaN epilayers

S. Chichibu*, T. Azuhata, T. Sota, S. Nakamura

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

425 Citations (Scopus)


Optical spectra of the bulk three-dimensional InGaN alloys were measured using the commercially available light-emitting diode devices and their wafers. The emission from undoped InxGa1-xN (x<0.1) was assigned to the recombination of excitons localized at the potential minima originating from the large compositional fluctuation. The emission from heavily impurity-doped InGaN was also pointed out related to the localized states.

Original languageEnglish
Pages (from-to)2822-2824
Number of pages3
JournalApplied Physics Letters
Issue number21
Publication statusPublished - 1997 May 26

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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