Optical spectra of the bulk three-dimensional InGaN alloys were measured using the commercially available light-emitting diode devices and their wafers. The emission from undoped InxGa1-xN (x<0.1) was assigned to the recombination of excitons localized at the potential minima originating from the large compositional fluctuation. The emission from heavily impurity-doped InGaN was also pointed out related to the localized states.
|Number of pages||3|
|Journal||Applied Physics Letters|
|Publication status||Published - 1997 May 26|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)