Luminescences from localized states in InGaN epilayers

S. Chichibu, T. Azuhata, Takayuki Sota, S. Nakamura

    Research output: Contribution to journalArticle

    406 Citations (Scopus)

    Abstract

    Optical spectra of the bulk three-dimensional InGaN alloys were measured using the commercially available light-emitting diode devices and their wafers. The emission from undoped InxGa1-xN (x<0.1) was assigned to the recombination of excitons localized at the potential minima originating from the large compositional fluctuation. The emission from heavily impurity-doped InGaN was also pointed out related to the localized states.

    Original languageEnglish
    Pages (from-to)2822-2824
    Number of pages3
    JournalApplied Physics Letters
    Volume70
    Issue number21
    Publication statusPublished - 1997 May 26

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    luminescence
    optical spectrum
    light emitting diodes
    excitons
    wafers
    impurities

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this

    Chichibu, S., Azuhata, T., Sota, T., & Nakamura, S. (1997). Luminescences from localized states in InGaN epilayers. Applied Physics Letters, 70(21), 2822-2824.

    Luminescences from localized states in InGaN epilayers. / Chichibu, S.; Azuhata, T.; Sota, Takayuki; Nakamura, S.

    In: Applied Physics Letters, Vol. 70, No. 21, 26.05.1997, p. 2822-2824.

    Research output: Contribution to journalArticle

    Chichibu, S, Azuhata, T, Sota, T & Nakamura, S 1997, 'Luminescences from localized states in InGaN epilayers', Applied Physics Letters, vol. 70, no. 21, pp. 2822-2824.
    Chichibu S, Azuhata T, Sota T, Nakamura S. Luminescences from localized states in InGaN epilayers. Applied Physics Letters. 1997 May 26;70(21):2822-2824.
    Chichibu, S. ; Azuhata, T. ; Sota, Takayuki ; Nakamura, S. / Luminescences from localized states in InGaN epilayers. In: Applied Physics Letters. 1997 ; Vol. 70, No. 21. pp. 2822-2824.
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