Magnetic and electric field effects of photoluminescence of excitons bound to nitrogen atom pairs in GaAs

Koji Onomitsu, Takehito Okabe, Toshiki Makimoto, Hisao Saito, Manfred Ramsteiner, Hai Jun Zhu, Atsushi Kawaharazuka, Klaus Ploog, Yoshiji Horikoshi

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The Magnetic and electric field effects of photoluminescence of excitons bound to nitrogen atom pairs in GaAs have been investigated for nitrogen 5-doped samples grown on (001) GaAs substrates. The excitons bound to nitrogen atom pairs produce a number of photoluminescence lines. However, these lines are much fewer than those observed in uniformly nitrogen-doped samples because of the limited spacing between two-dimensionally distributed nitrogen atoms. Among these lines, those appearing at 1.488, 1.476, and 1.428 eV are the most dominant. In this study, the characteristics of these dominant lines are investigated by an applying external field. The observed phenomena are explained by assuming that there is a continuous flow of excitons from a lower to a higher binding energy state under continuous excitation. Each photoluminescence line is found to split into two or more lines without applying an external field. The lines show a further split under a magnetic field and are finally quenched when the magnetic field is increased. The photoluminescence intensity of each line is modulated by the localization of excitons by a magnetic field and by the delocalization by an electric field.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume43
Issue number6 B
Publication statusPublished - 2004 Jun 15
Externally publishedYes

Fingerprint

Electric field effects
Magnetic field effects
Excitons
nitrogen atoms
Photoluminescence
excitons
Nitrogen
photoluminescence
Atoms
electric fields
magnetic fields
Magnetic fields
nitrogen
Binding energy
binding energy
Electron energy levels
spacing
Electric fields
excitation
Substrates

Keywords

  • δ doping
  • Isoelectronic trap
  • Magnetic field dependence
  • Nitrogen atom pair
  • Photoluminescence

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Magnetic and electric field effects of photoluminescence of excitons bound to nitrogen atom pairs in GaAs. / Onomitsu, Koji; Okabe, Takehito; Makimoto, Toshiki; Saito, Hisao; Ramsteiner, Manfred; Zhu, Hai Jun; Kawaharazuka, Atsushi; Ploog, Klaus; Horikoshi, Yoshiji.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 43, No. 6 B, 15.06.2004.

Research output: Contribution to journalArticle

Onomitsu, K, Okabe, T, Makimoto, T, Saito, H, Ramsteiner, M, Zhu, HJ, Kawaharazuka, A, Ploog, K & Horikoshi, Y 2004, 'Magnetic and electric field effects of photoluminescence of excitons bound to nitrogen atom pairs in GaAs', Japanese Journal of Applied Physics, Part 2: Letters, vol. 43, no. 6 B.
Onomitsu, Koji ; Okabe, Takehito ; Makimoto, Toshiki ; Saito, Hisao ; Ramsteiner, Manfred ; Zhu, Hai Jun ; Kawaharazuka, Atsushi ; Ploog, Klaus ; Horikoshi, Yoshiji. / Magnetic and electric field effects of photoluminescence of excitons bound to nitrogen atom pairs in GaAs. In: Japanese Journal of Applied Physics, Part 2: Letters. 2004 ; Vol. 43, No. 6 B.
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AU - Ramsteiner, Manfred

AU - Zhu, Hai Jun

AU - Kawaharazuka, Atsushi

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AB - The Magnetic and electric field effects of photoluminescence of excitons bound to nitrogen atom pairs in GaAs have been investigated for nitrogen 5-doped samples grown on (001) GaAs substrates. The excitons bound to nitrogen atom pairs produce a number of photoluminescence lines. However, these lines are much fewer than those observed in uniformly nitrogen-doped samples because of the limited spacing between two-dimensionally distributed nitrogen atoms. Among these lines, those appearing at 1.488, 1.476, and 1.428 eV are the most dominant. In this study, the characteristics of these dominant lines are investigated by an applying external field. The observed phenomena are explained by assuming that there is a continuous flow of excitons from a lower to a higher binding energy state under continuous excitation. Each photoluminescence line is found to split into two or more lines without applying an external field. The lines show a further split under a magnetic field and are finally quenched when the magnetic field is increased. The photoluminescence intensity of each line is modulated by the localization of excitons by a magnetic field and by the delocalization by an electric field.

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