TY - GEN
T1 - Magnetic and transport properties of antiperovskite nitride Co3FeN films
AU - Kawai, S.
AU - Ando, H.
AU - Sakakibara, H.
AU - Kuroki, Y.
AU - Hajiri, T.
AU - Ueda, K.
AU - Asano, H.
N1 - Publisher Copyright:
© 2015 IEEE.
PY - 2015/7/14
Y1 - 2015/7/14
N2 - Highly spin-polarized ferromagnetic materials have attracted much attention for high-performance spintronic devices. Recently, antiperovskite 3d ferromagnetic nitirides such as Fe4N and CoxFe4-xN are focused because they do not contain rare earth elements and harmful elements. Recent first-principle calculation suggests that Co3FeN has a high negative spin polarization (P = -1), hence Co3FeN is most promising material for spintronics [1]. Up to now, epitaxial growth and properties of Co3FeN thin films on SrTiO3 substrates (lattice mismuch = -3.9%) by molecular beam epitaxy (MBE) were reported[2]. Recently, we succeeded in epitaxial growth of Co3FeN thin films on (La0.18Sr0.82)(Al0. 59Ta0.41)O3 (LSAT) substrates (lattice mismatch = -2.8 %) by reactive magnetron sputtering in Ar+N2 atmosphere (volume concentration of N2 gas N2% = 8∼15% and substrate temperature Ts = 350 °C) [3]. The sign and the absolute value of AMR ratio are considered to be strong related to spin polarization [4]. We obtained the anisotropic magnetoresistance (AMR) ratio of -0.88% [3], so that our Co3FeN thin film is expected high spin polarization. In this study, we report a systematical study by changing Ts on growth of Co3FeN thin films on LSAT substrate and its magnetic properties including AMR ratio. As a result, we obtain larger absolute value of the AMR ratio than our previous report. In addition, we succeeded in measuring the spin polarization of Co3FeN by point contact Andreev reflection. Finally, we would like to discuss the relationship between AMR ratio and spin polarization.
AB - Highly spin-polarized ferromagnetic materials have attracted much attention for high-performance spintronic devices. Recently, antiperovskite 3d ferromagnetic nitirides such as Fe4N and CoxFe4-xN are focused because they do not contain rare earth elements and harmful elements. Recent first-principle calculation suggests that Co3FeN has a high negative spin polarization (P = -1), hence Co3FeN is most promising material for spintronics [1]. Up to now, epitaxial growth and properties of Co3FeN thin films on SrTiO3 substrates (lattice mismuch = -3.9%) by molecular beam epitaxy (MBE) were reported[2]. Recently, we succeeded in epitaxial growth of Co3FeN thin films on (La0.18Sr0.82)(Al0. 59Ta0.41)O3 (LSAT) substrates (lattice mismatch = -2.8 %) by reactive magnetron sputtering in Ar+N2 atmosphere (volume concentration of N2 gas N2% = 8∼15% and substrate temperature Ts = 350 °C) [3]. The sign and the absolute value of AMR ratio are considered to be strong related to spin polarization [4]. We obtained the anisotropic magnetoresistance (AMR) ratio of -0.88% [3], so that our Co3FeN thin film is expected high spin polarization. In this study, we report a systematical study by changing Ts on growth of Co3FeN thin films on LSAT substrate and its magnetic properties including AMR ratio. As a result, we obtain larger absolute value of the AMR ratio than our previous report. In addition, we succeeded in measuring the spin polarization of Co3FeN by point contact Andreev reflection. Finally, we would like to discuss the relationship between AMR ratio and spin polarization.
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U2 - 10.1109/INTMAG.2015.7156909
DO - 10.1109/INTMAG.2015.7156909
M3 - Conference contribution
AN - SCOPUS:84942436702
T3 - 2015 IEEE International Magnetics Conference, INTERMAG 2015
BT - 2015 IEEE International Magnetics Conference, INTERMAG 2015
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2015 IEEE International Magnetics Conference, INTERMAG 2015
Y2 - 11 May 2015 through 15 May 2015
ER -