Magnetic impurities and itinerant carriers in doped SrTi O3: Anomalous Hall resistivity

D. Satoh, K. Okamoto, T. Katsufuji

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Abstract

We studied perovskite SrTi O3 into which magnetic impurities (Cr or V) and itinerant carriers (electrons in the Ti 3d band) are introduced. We found that the itinerancy of the electrons on the magnetic impurities and magnetic properties of the compounds depend on the species of the transition metal as impurities. Anomalous Hall resistivity was observed in Cr-doped SrTi O3, and it was found that its coefficient is inversely proportional to the number of itinerant carriers.

Original languageEnglish
Article number121201
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume77
Issue number12
DOIs
Publication statusPublished - 2008 Mar 6

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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