Magnetic impurities and itinerant carriers in doped SrTi O3: Anomalous Hall resistivity

D. Satoh, K. Okamoto, Takuro Katsufuji

    Research output: Contribution to journalArticle

    9 Citations (Scopus)

    Abstract

    We studied perovskite SrTi O3 into which magnetic impurities (Cr or V) and itinerant carriers (electrons in the Ti 3d band) are introduced. We found that the itinerancy of the electrons on the magnetic impurities and magnetic properties of the compounds depend on the species of the transition metal as impurities. Anomalous Hall resistivity was observed in Cr-doped SrTi O3, and it was found that its coefficient is inversely proportional to the number of itinerant carriers.

    Original languageEnglish
    Article number121201
    JournalPhysical Review B - Condensed Matter and Materials Physics
    Volume77
    Issue number12
    DOIs
    Publication statusPublished - 2008 Mar 6

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    Impurities
    impurities
    electrical resistivity
    Electrons
    Perovskite
    Transition metals
    Magnetic properties
    electrons
    transition metals
    magnetic properties
    coefficients
    perovskite

    ASJC Scopus subject areas

    • Condensed Matter Physics

    Cite this

    Magnetic impurities and itinerant carriers in doped SrTi O3 : Anomalous Hall resistivity. / Satoh, D.; Okamoto, K.; Katsufuji, Takuro.

    In: Physical Review B - Condensed Matter and Materials Physics, Vol. 77, No. 12, 121201, 06.03.2008.

    Research output: Contribution to journalArticle

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    AB - We studied perovskite SrTi O3 into which magnetic impurities (Cr or V) and itinerant carriers (electrons in the Ti 3d band) are introduced. We found that the itinerancy of the electrons on the magnetic impurities and magnetic properties of the compounds depend on the species of the transition metal as impurities. Anomalous Hall resistivity was observed in Cr-doped SrTi O3, and it was found that its coefficient is inversely proportional to the number of itinerant carriers.

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