Magnetic properties and anisotropic magnetoresistance of antiperovskite nitride Mn3GaN/Co3FeN exchange-coupled bilayers

H. Sakakibara; H. Ando; Y. Kuroki; S. Kawai; K. Ueda; H. Asano

doi:10.1063/1.4917501

Magnetic properties and anisotropic magnetoresistance of antiperovskite nitride Mn₃GaN/Co₃FeN exchange-coupled bilayers

H. Sakakibara^*, H. Ando, Y. Kuroki, S. Kawai, K. Ueda, H. Asano

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

Epitaxial bilayers of antiferromagnetic Mn₃GaN/ferromagnetic Co₃FeN with an antiperovskite structure were grown by reactive magnetron sputtering, and their structural, magnetic, and electrical properties were investigated. Exchange coupling with an exchange field H_ex of 0.4 kOe at 4 K was observed for Mn₃GaN (20 nm)/Co₃FeN (5 nm) bilayers. Negative anisotropic magnetoresistance (AMR) effect in Co₃FeN was observed and utilized to detect magnetization reversal in exchange-coupled Mn₃GaN/Co₃FeN bilayers. The AMR results showed evidence for current-induced spin transfer torque in antiferromagnetic Mn₃GaN.

Original language	English
Article number	17D725
Journal	Journal of Applied Physics
Volume	117
Issue number	17
DOIs	https://doi.org/10.1063/1.4917501
Publication status	Published - 2015 May 7
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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title = "Magnetic properties and anisotropic magnetoresistance of antiperovskite nitride Mn3GaN/Co3FeN exchange-coupled bilayers",

abstract = "Epitaxial bilayers of antiferromagnetic Mn3GaN/ferromagnetic Co3FeN with an antiperovskite structure were grown by reactive magnetron sputtering, and their structural, magnetic, and electrical properties were investigated. Exchange coupling with an exchange field Hex of 0.4 kOe at 4 K was observed for Mn3GaN (20 nm)/Co3FeN (5 nm) bilayers. Negative anisotropic magnetoresistance (AMR) effect in Co3FeN was observed and utilized to detect magnetization reversal in exchange-coupled Mn3GaN/Co3FeN bilayers. The AMR results showed evidence for current-induced spin transfer torque in antiferromagnetic Mn3GaN.",

author = "H. Sakakibara and H. Ando and Y. Kuroki and S. Kawai and K. Ueda and H. Asano",

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T1 - Magnetic properties and anisotropic magnetoresistance of antiperovskite nitride Mn3GaN/Co3FeN exchange-coupled bilayers

AU - Sakakibara, H.

AU - Ando, H.

AU - Kuroki, Y.

AU - Kawai, S.

AU - Ueda, K.

AU - Asano, H.

PY - 2015/5/7

Y1 - 2015/5/7

N2 - Epitaxial bilayers of antiferromagnetic Mn3GaN/ferromagnetic Co3FeN with an antiperovskite structure were grown by reactive magnetron sputtering, and their structural, magnetic, and electrical properties were investigated. Exchange coupling with an exchange field Hex of 0.4 kOe at 4 K was observed for Mn3GaN (20 nm)/Co3FeN (5 nm) bilayers. Negative anisotropic magnetoresistance (AMR) effect in Co3FeN was observed and utilized to detect magnetization reversal in exchange-coupled Mn3GaN/Co3FeN bilayers. The AMR results showed evidence for current-induced spin transfer torque in antiferromagnetic Mn3GaN.

AB - Epitaxial bilayers of antiferromagnetic Mn3GaN/ferromagnetic Co3FeN with an antiperovskite structure were grown by reactive magnetron sputtering, and their structural, magnetic, and electrical properties were investigated. Exchange coupling with an exchange field Hex of 0.4 kOe at 4 K was observed for Mn3GaN (20 nm)/Co3FeN (5 nm) bilayers. Negative anisotropic magnetoresistance (AMR) effect in Co3FeN was observed and utilized to detect magnetization reversal in exchange-coupled Mn3GaN/Co3FeN bilayers. The AMR results showed evidence for current-induced spin transfer torque in antiferromagnetic Mn3GaN.

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DO - 10.1063/1.4917501

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Magnetic properties and anisotropic magnetoresistance of antiperovskite nitride Mn₃GaN/Co₃FeN exchange-coupled bilayers

Abstract

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