Magnetoresistance in a doped Mott-Hubbard system

R TiO3

T. Ito, Y. Shimada, Takuro Katsufuji

    Research output: Contribution to journalArticle

    3 Citations (Scopus)

    Abstract

    We studied the magnetoresistance of RTiO3 (R=Pr and Ce) with offstoichiometry as a doped Mott-Hubbard system and found positive magnetoresistance proportional to the absolute value of the magnetic field in the antiferromagnetic phase of both insulating and metallic samples. This result indicates that not only the coherent state that appears with doping and is responsible for the metallic conduction, but also the incoherent state of the Mott-Hubbard insulator is affected by the spin configuration.

    Original languageEnglish
    Article number024411
    JournalPhysical Review B - Condensed Matter and Materials Physics
    Volume91
    Issue number2
    DOIs
    Publication statusPublished - 2015 Jan 12

    Fingerprint

    Magnetoresistance
    insulators
    conduction
    configurations
    magnetic fields
    Doping (additives)
    Magnetic fields

    ASJC Scopus subject areas

    • Condensed Matter Physics
    • Electronic, Optical and Magnetic Materials

    Cite this

    Magnetoresistance in a doped Mott-Hubbard system : R TiO3. / Ito, T.; Shimada, Y.; Katsufuji, Takuro.

    In: Physical Review B - Condensed Matter and Materials Physics, Vol. 91, No. 2, 024411, 12.01.2015.

    Research output: Contribution to journalArticle

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    AB - We studied the magnetoresistance of RTiO3 (R=Pr and Ce) with offstoichiometry as a doped Mott-Hubbard system and found positive magnetoresistance proportional to the absolute value of the magnetic field in the antiferromagnetic phase of both insulating and metallic samples. This result indicates that not only the coherent state that appears with doping and is responsible for the metallic conduction, but also the incoherent state of the Mott-Hubbard insulator is affected by the spin configuration.

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