Magnetoresistance in a doped Mott-Hubbard system: R TiO3

T. Ito, Y. Shimada, T. Katsufuji*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


We studied the magnetoresistance of RTiO3 (R=Pr and Ce) with offstoichiometry as a doped Mott-Hubbard system and found positive magnetoresistance proportional to the absolute value of the magnetic field in the antiferromagnetic phase of both insulating and metallic samples. This result indicates that not only the coherent state that appears with doping and is responsible for the metallic conduction, but also the incoherent state of the Mott-Hubbard insulator is affected by the spin configuration.

Original languageEnglish
Article number024411
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number2
Publication statusPublished - 2015 Jan 12

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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