TY - JOUR
T1 - Magnetoresistance in a doped Mott-Hubbard system
T2 - R TiO3
AU - Ito, T.
AU - Shimada, Y.
AU - Katsufuji, T.
N1 - Publisher Copyright:
© 2015 American Physical Society.
PY - 2015/1/12
Y1 - 2015/1/12
N2 - We studied the magnetoresistance of RTiO3 (R=Pr and Ce) with offstoichiometry as a doped Mott-Hubbard system and found positive magnetoresistance proportional to the absolute value of the magnetic field in the antiferromagnetic phase of both insulating and metallic samples. This result indicates that not only the coherent state that appears with doping and is responsible for the metallic conduction, but also the incoherent state of the Mott-Hubbard insulator is affected by the spin configuration.
AB - We studied the magnetoresistance of RTiO3 (R=Pr and Ce) with offstoichiometry as a doped Mott-Hubbard system and found positive magnetoresistance proportional to the absolute value of the magnetic field in the antiferromagnetic phase of both insulating and metallic samples. This result indicates that not only the coherent state that appears with doping and is responsible for the metallic conduction, but also the incoherent state of the Mott-Hubbard insulator is affected by the spin configuration.
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U2 - 10.1103/PhysRevB.91.024411
DO - 10.1103/PhysRevB.91.024411
M3 - Article
AN - SCOPUS:84921058876
SN - 0163-1829
VL - 91
JO - Physical Review B-Condensed Matter
JF - Physical Review B-Condensed Matter
IS - 2
M1 - 024411
ER -