MBE growth and characterization of ZnS1-xTex and Zn1-yMgyS1-xTex alloys

M. Kobayashi; C. Setiagung; K. Wakao; S. Nakamura; A. Yoshikawa; K. Takahashi

doi:10.1016/S0022-0248(98)80295-9

MBE growth and characterization of ZnS_1-xTe_x and Zn_1-yMg_yS_1-xTe_x alloys

M. Kobayashi^*, C. Setiagung, K. Wakao, S. Nakamura, A. Yoshikawa, K. Takahashi

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

ZnS_1-xTe_x and Zn_1-yMg_yS_1-xTe_x epilayers were grown on (1 0 0)GaAs by MBE. Ternary and quaternary alloys can be lattice matched to GaAs by adjusting the composition of the group VI and group II elements. Zincblende structure layers were grown and p-doping was achieved. A fairly good ohmic contact profile was obtained between gold and the alloy. By using the Au/p-ZnS_1-xTe_x contacting layer, ohmic contact was obtained to p-ZnSe. p-Zn_1-yMg_yS_1-xTe_x layers were applied to cladding layers of the LED, and bright luminescence was observed.

Original language	English
Pages (from-to)	66-69
Number of pages	4
Journal	Journal of Crystal Growth
Volume	184-185
DOIs	https://doi.org/10.1016/S0022-0248(98)80295-9
Publication status	Published - 1998
Externally published	Yes

Keywords

Electrical Properties
LED
MBE
ZnMgSTe
ZnSTe

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Access to Document

10.1016/S0022-0248(98)80295-9

Cite this

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title = "MBE growth and characterization of ZnS1-xTex and Zn1-yMgyS1-xTex alloys",

abstract = "ZnS1-xTex and Zn1-yMgyS1-xTex epilayers were grown on (1 0 0)GaAs by MBE. Ternary and quaternary alloys can be lattice matched to GaAs by adjusting the composition of the group VI and group II elements. Zincblende structure layers were grown and p-doping was achieved. A fairly good ohmic contact profile was obtained between gold and the alloy. By using the Au/p-ZnS1-xTex contacting layer, ohmic contact was obtained to p-ZnSe. p-Zn1-yMgyS1-xTex layers were applied to cladding layers of the LED, and bright luminescence was observed.",

keywords = "Electrical Properties, LED, MBE, ZnMgSTe, ZnSTe",

author = "M. Kobayashi and C. Setiagung and K. Wakao and S. Nakamura and A. Yoshikawa and K. Takahashi",

year = "1998",

doi = "10.1016/S0022-0248(98)80295-9",

language = "English",

volume = "184-185",

pages = "66--69",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

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TY - JOUR

T1 - MBE growth and characterization of ZnS1-xTex and Zn1-yMgyS1-xTex alloys

AU - Kobayashi, M.

AU - Setiagung, C.

AU - Wakao, K.

AU - Nakamura, S.

AU - Yoshikawa, A.

AU - Takahashi, K.

PY - 1998

Y1 - 1998

N2 - ZnS1-xTex and Zn1-yMgyS1-xTex epilayers were grown on (1 0 0)GaAs by MBE. Ternary and quaternary alloys can be lattice matched to GaAs by adjusting the composition of the group VI and group II elements. Zincblende structure layers were grown and p-doping was achieved. A fairly good ohmic contact profile was obtained between gold and the alloy. By using the Au/p-ZnS1-xTex contacting layer, ohmic contact was obtained to p-ZnSe. p-Zn1-yMgyS1-xTex layers were applied to cladding layers of the LED, and bright luminescence was observed.

AB - ZnS1-xTex and Zn1-yMgyS1-xTex epilayers were grown on (1 0 0)GaAs by MBE. Ternary and quaternary alloys can be lattice matched to GaAs by adjusting the composition of the group VI and group II elements. Zincblende structure layers were grown and p-doping was achieved. A fairly good ohmic contact profile was obtained between gold and the alloy. By using the Au/p-ZnS1-xTex contacting layer, ohmic contact was obtained to p-ZnSe. p-Zn1-yMgyS1-xTex layers were applied to cladding layers of the LED, and bright luminescence was observed.

KW - Electrical Properties

KW - LED

KW - MBE

KW - ZnMgSTe

KW - ZnSTe

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