MBE growth and characterization of ZnS1-xTex and Zn1-yMgyS1-xTex alloys

M. Kobayashi*, C. Setiagung, K. Wakao, S. Nakamura, A. Yoshikawa, K. Takahashi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


ZnS1-xTex and Zn1-yMgyS1-xTex epilayers were grown on (1 0 0)GaAs by MBE. Ternary and quaternary alloys can be lattice matched to GaAs by adjusting the composition of the group VI and group II elements. Zincblende structure layers were grown and p-doping was achieved. A fairly good ohmic contact profile was obtained between gold and the alloy. By using the Au/p-ZnS1-xTex contacting layer, ohmic contact was obtained to p-ZnSe. p-Zn1-yMgyS1-xTex layers were applied to cladding layers of the LED, and bright luminescence was observed.

Original languageEnglish
Pages (from-to)66-69
Number of pages4
JournalJournal of Crystal Growth
Publication statusPublished - 1998
Externally publishedYes


  • Electrical Properties
  • LED
  • MBE
  • ZnMgSTe
  • ZnSTe

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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