MBE growth and characterization of ZnTe epilayers on m-plane sapphire substrates

Taizo Nakasu, Wei Che Sun, Sotaro Yamashita, Takayuki Aiba, Kosuke Taguri, Masakazu Kobayashi, Toshiaki Asahi, Hiroyoshi Togo

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    Abstract

    ZnTe epilayers were grown on transparent (10-10) oriented (m -plane) sapphire substrates by molecular beam epitaxy (MBE). Pole figure imaging was used to study the domain distribution within the layer. (211)-oriented ZnTe domains were formed on m -plane sapphire. The presence of only one kind of (211) ZnTe domain formed on the 2°-tilted m -plane sapphire substrates was confirmed. Thus, single domain (211) ZnTe epilayers can be grown on the m -plane sapphire using MBE. Although differences in the crystal structure and lattice mismatch are large, precise control of the substrate surface lattice arrangement result in the formation of high-quality epitaxial layers.

    Original languageEnglish
    Pages (from-to)1182-1185
    Number of pages4
    JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
    Volume11
    Issue number7-8
    DOIs
    Publication statusPublished - 2014

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    Keywords

    • Heteroepitaxy
    • Molecular beam epitaxy
    • Pole figure
    • Sapphire
    • ZnTe

    ASJC Scopus subject areas

    • Condensed Matter Physics

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