MBE growth and characterization of ZnTe epilayers on m-plane sapphire substrates

Taizo Nakasu, Wei Che Sun, Sotaro Yamashita, Takayuki Aiba, Kosuke Taguri, Masakazu Kobayashi, Toshiaki Asahi, Hiroyoshi Togo

    Research output: Contribution to journalArticle

    9 Citations (Scopus)

    Abstract

    ZnTe epilayers were grown on transparent (10-10) oriented (m -plane) sapphire substrates by molecular beam epitaxy (MBE). Pole figure imaging was used to study the domain distribution within the layer. (211)-oriented ZnTe domains were formed on m -plane sapphire. The presence of only one kind of (211) ZnTe domain formed on the 2°-tilted m -plane sapphire substrates was confirmed. Thus, single domain (211) ZnTe epilayers can be grown on the m -plane sapphire using MBE. Although differences in the crystal structure and lattice mismatch are large, precise control of the substrate surface lattice arrangement result in the formation of high-quality epitaxial layers.

    Original languageEnglish
    Pages (from-to)1182-1185
    Number of pages4
    JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
    Volume11
    Issue number7-8
    DOIs
    Publication statusPublished - 2014

    Fingerprint

    sapphire
    molecular beam epitaxy
    crystal lattices
    poles
    crystal structure

    Keywords

    • Heteroepitaxy
    • Molecular beam epitaxy
    • Pole figure
    • Sapphire
    • ZnTe

    ASJC Scopus subject areas

    • Condensed Matter Physics

    Cite this

    MBE growth and characterization of ZnTe epilayers on m-plane sapphire substrates. / Nakasu, Taizo; Sun, Wei Che; Yamashita, Sotaro; Aiba, Takayuki; Taguri, Kosuke; Kobayashi, Masakazu; Asahi, Toshiaki; Togo, Hiroyoshi.

    In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 11, No. 7-8, 2014, p. 1182-1185.

    Research output: Contribution to journalArticle

    Nakasu, Taizo ; Sun, Wei Che ; Yamashita, Sotaro ; Aiba, Takayuki ; Taguri, Kosuke ; Kobayashi, Masakazu ; Asahi, Toshiaki ; Togo, Hiroyoshi. / MBE growth and characterization of ZnTe epilayers on m-plane sapphire substrates. In: Physica Status Solidi (C) Current Topics in Solid State Physics. 2014 ; Vol. 11, No. 7-8. pp. 1182-1185.
    @article{f35bd08202b14bae92855ac3a1a85069,
    title = "MBE growth and characterization of ZnTe epilayers on m-plane sapphire substrates",
    abstract = "ZnTe epilayers were grown on transparent (10-10) oriented (m -plane) sapphire substrates by molecular beam epitaxy (MBE). Pole figure imaging was used to study the domain distribution within the layer. (211)-oriented ZnTe domains were formed on m -plane sapphire. The presence of only one kind of (211) ZnTe domain formed on the 2°-tilted m -plane sapphire substrates was confirmed. Thus, single domain (211) ZnTe epilayers can be grown on the m -plane sapphire using MBE. Although differences in the crystal structure and lattice mismatch are large, precise control of the substrate surface lattice arrangement result in the formation of high-quality epitaxial layers.",
    keywords = "Heteroepitaxy, Molecular beam epitaxy, Pole figure, Sapphire, ZnTe",
    author = "Taizo Nakasu and Sun, {Wei Che} and Sotaro Yamashita and Takayuki Aiba and Kosuke Taguri and Masakazu Kobayashi and Toshiaki Asahi and Hiroyoshi Togo",
    year = "2014",
    doi = "10.1002/pssc.201300582",
    language = "English",
    volume = "11",
    pages = "1182--1185",
    journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",
    issn = "1862-6351",
    publisher = "Wiley-VCH Verlag",
    number = "7-8",

    }

    TY - JOUR

    T1 - MBE growth and characterization of ZnTe epilayers on m-plane sapphire substrates

    AU - Nakasu, Taizo

    AU - Sun, Wei Che

    AU - Yamashita, Sotaro

    AU - Aiba, Takayuki

    AU - Taguri, Kosuke

    AU - Kobayashi, Masakazu

    AU - Asahi, Toshiaki

    AU - Togo, Hiroyoshi

    PY - 2014

    Y1 - 2014

    N2 - ZnTe epilayers were grown on transparent (10-10) oriented (m -plane) sapphire substrates by molecular beam epitaxy (MBE). Pole figure imaging was used to study the domain distribution within the layer. (211)-oriented ZnTe domains were formed on m -plane sapphire. The presence of only one kind of (211) ZnTe domain formed on the 2°-tilted m -plane sapphire substrates was confirmed. Thus, single domain (211) ZnTe epilayers can be grown on the m -plane sapphire using MBE. Although differences in the crystal structure and lattice mismatch are large, precise control of the substrate surface lattice arrangement result in the formation of high-quality epitaxial layers.

    AB - ZnTe epilayers were grown on transparent (10-10) oriented (m -plane) sapphire substrates by molecular beam epitaxy (MBE). Pole figure imaging was used to study the domain distribution within the layer. (211)-oriented ZnTe domains were formed on m -plane sapphire. The presence of only one kind of (211) ZnTe domain formed on the 2°-tilted m -plane sapphire substrates was confirmed. Thus, single domain (211) ZnTe epilayers can be grown on the m -plane sapphire using MBE. Although differences in the crystal structure and lattice mismatch are large, precise control of the substrate surface lattice arrangement result in the formation of high-quality epitaxial layers.

    KW - Heteroepitaxy

    KW - Molecular beam epitaxy

    KW - Pole figure

    KW - Sapphire

    KW - ZnTe

    UR - http://www.scopus.com/inward/record.url?scp=84904046025&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=84904046025&partnerID=8YFLogxK

    U2 - 10.1002/pssc.201300582

    DO - 10.1002/pssc.201300582

    M3 - Article

    AN - SCOPUS:84904046025

    VL - 11

    SP - 1182

    EP - 1185

    JO - Physica Status Solidi (C) Current Topics in Solid State Physics

    JF - Physica Status Solidi (C) Current Topics in Solid State Physics

    SN - 1862-6351

    IS - 7-8

    ER -