MBE growth and microstructural evaluation of Zn(S,Se)-based LEDs and diode lasers

D. C. Grillo, W. Xie, Masakazu Kobayashi, R. L. Gunshor, G. C. Hua, N. Otsuka, H. Jeon, J. Ding, A. V. Nurmikko

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The use of a nitrogen radio frequency plasma source together with an appropriate quantum well configuration have recently resulted in the successful realization of p-type ZnSe by molecular beam epitaxy. This has enabled a variety of pn heterojunction based devices to be built including the first semiconductor injection lasers operating in the blue/green portion of the spectrum first reported by 3M and the Brown/Purdue group. In this paper, we discuss two lattice matched multiple quantum well structures that produce laser emission in the blue and blue/green portion of the spectrum.

Original languageEnglish
Pages (from-to)441-444
Number of pages4
JournalJournal of Electronic Materials
Volume22
Issue number5
DOIs
Publication statusPublished - 1993 May
Externally publishedYes

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Keywords

  • Blue laser emission
  • molecular beam epitaxy
  • Zn(S,Se)-based light emitting diodes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Electrical and Electronic Engineering

Cite this

Grillo, D. C., Xie, W., Kobayashi, M., Gunshor, R. L., Hua, G. C., Otsuka, N., Jeon, H., Ding, J., & Nurmikko, A. V. (1993). MBE growth and microstructural evaluation of Zn(S,Se)-based LEDs and diode lasers. Journal of Electronic Materials, 22(5), 441-444. https://doi.org/10.1007/BF02661610