MBE growth and microstructural evaluation of Zn(S,Se)-based LEDs and diode lasers

D. C. Grillo, W. Xie, Masakazu Kobayashi, R. L. Gunshor, G. C. Hua, N. Otsuka, H. Jeon, J. Ding, A. V. Nurmikko

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The use of a nitrogen radio frequency plasma source together with an appropriate quantum well configuration have recently resulted in the successful realization of p-type ZnSe by molecular beam epitaxy. This has enabled a variety of pn heterojunction based devices to be built including the first semiconductor injection lasers operating in the blue/green portion of the spectrum first reported by 3M and the Brown/Purdue group. In this paper, we discuss two lattice matched multiple quantum well structures that produce laser emission in the blue and blue/green portion of the spectrum.

Original languageEnglish
Pages (from-to)441-444
Number of pages4
JournalJournal of Electronic Materials
Volume22
Issue number5
DOIs
Publication statusPublished - 1993 May
Externally publishedYes

Fingerprint

Molecular beam epitaxy
Semiconductor quantum wells
Light emitting diodes
Semiconductor lasers
light emitting diodes
semiconductor lasers
quantum wells
Injection lasers
injection lasers
Plasma sources
evaluation
Heterojunctions
heterojunctions
radio frequencies
Nitrogen
molecular beam epitaxy
Semiconductor materials
nitrogen
Lasers
configurations

Keywords

  • Blue laser emission
  • molecular beam epitaxy
  • Zn(S,Se)-based light emitting diodes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Electrical and Electronic Engineering

Cite this

Grillo, D. C., Xie, W., Kobayashi, M., Gunshor, R. L., Hua, G. C., Otsuka, N., ... Nurmikko, A. V. (1993). MBE growth and microstructural evaluation of Zn(S,Se)-based LEDs and diode lasers. Journal of Electronic Materials, 22(5), 441-444. https://doi.org/10.1007/BF02661610

MBE growth and microstructural evaluation of Zn(S,Se)-based LEDs and diode lasers. / Grillo, D. C.; Xie, W.; Kobayashi, Masakazu; Gunshor, R. L.; Hua, G. C.; Otsuka, N.; Jeon, H.; Ding, J.; Nurmikko, A. V.

In: Journal of Electronic Materials, Vol. 22, No. 5, 05.1993, p. 441-444.

Research output: Contribution to journalArticle

Grillo, DC, Xie, W, Kobayashi, M, Gunshor, RL, Hua, GC, Otsuka, N, Jeon, H, Ding, J & Nurmikko, AV 1993, 'MBE growth and microstructural evaluation of Zn(S,Se)-based LEDs and diode lasers', Journal of Electronic Materials, vol. 22, no. 5, pp. 441-444. https://doi.org/10.1007/BF02661610
Grillo, D. C. ; Xie, W. ; Kobayashi, Masakazu ; Gunshor, R. L. ; Hua, G. C. ; Otsuka, N. ; Jeon, H. ; Ding, J. ; Nurmikko, A. V. / MBE growth and microstructural evaluation of Zn(S,Se)-based LEDs and diode lasers. In: Journal of Electronic Materials. 1993 ; Vol. 22, No. 5. pp. 441-444.
@article{6b10df49c1fb4fd39f96a26907362704,
title = "MBE growth and microstructural evaluation of Zn(S,Se)-based LEDs and diode lasers",
abstract = "The use of a nitrogen radio frequency plasma source together with an appropriate quantum well configuration have recently resulted in the successful realization of p-type ZnSe by molecular beam epitaxy. This has enabled a variety of pn heterojunction based devices to be built including the first semiconductor injection lasers operating in the blue/green portion of the spectrum first reported by 3M and the Brown/Purdue group. In this paper, we discuss two lattice matched multiple quantum well structures that produce laser emission in the blue and blue/green portion of the spectrum.",
keywords = "Blue laser emission, molecular beam epitaxy, Zn(S,Se)-based light emitting diodes",
author = "Grillo, {D. C.} and W. Xie and Masakazu Kobayashi and Gunshor, {R. L.} and Hua, {G. C.} and N. Otsuka and H. Jeon and J. Ding and Nurmikko, {A. V.}",
year = "1993",
month = "5",
doi = "10.1007/BF02661610",
language = "English",
volume = "22",
pages = "441--444",
journal = "Journal of Electronic Materials",
issn = "0361-5235",
publisher = "Springer New York",
number = "5",

}

TY - JOUR

T1 - MBE growth and microstructural evaluation of Zn(S,Se)-based LEDs and diode lasers

AU - Grillo, D. C.

AU - Xie, W.

AU - Kobayashi, Masakazu

AU - Gunshor, R. L.

AU - Hua, G. C.

AU - Otsuka, N.

AU - Jeon, H.

AU - Ding, J.

AU - Nurmikko, A. V.

PY - 1993/5

Y1 - 1993/5

N2 - The use of a nitrogen radio frequency plasma source together with an appropriate quantum well configuration have recently resulted in the successful realization of p-type ZnSe by molecular beam epitaxy. This has enabled a variety of pn heterojunction based devices to be built including the first semiconductor injection lasers operating in the blue/green portion of the spectrum first reported by 3M and the Brown/Purdue group. In this paper, we discuss two lattice matched multiple quantum well structures that produce laser emission in the blue and blue/green portion of the spectrum.

AB - The use of a nitrogen radio frequency plasma source together with an appropriate quantum well configuration have recently resulted in the successful realization of p-type ZnSe by molecular beam epitaxy. This has enabled a variety of pn heterojunction based devices to be built including the first semiconductor injection lasers operating in the blue/green portion of the spectrum first reported by 3M and the Brown/Purdue group. In this paper, we discuss two lattice matched multiple quantum well structures that produce laser emission in the blue and blue/green portion of the spectrum.

KW - Blue laser emission

KW - molecular beam epitaxy

KW - Zn(S,Se)-based light emitting diodes

UR - http://www.scopus.com/inward/record.url?scp=51249169362&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=51249169362&partnerID=8YFLogxK

U2 - 10.1007/BF02661610

DO - 10.1007/BF02661610

M3 - Article

AN - SCOPUS:51249169362

VL - 22

SP - 441

EP - 444

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

SN - 0361-5235

IS - 5

ER -