Abstract
Growth of high-quality and/or "purely cubic" GaN layers on (001) GaAs has been investigated by an rf-radical source MBE paying particular attention to the effect of surface cleaning and smoothing on the structural properties of the GaN epilayers. Device-quality c-GaN layers can be grown on the (001) GaAs treated by atomic hydrogen at high temperatures; the FWHM of X-ray rocking curve for the c-GaN (002) plane is as small as 80-90 arcsec and also the inclusion of the hexagonal phase GaN in the epilayer can be less than 4×10-3.
| Original language | English |
|---|---|
| Pages (from-to) | 1221-1224 |
| Number of pages | 4 |
| Journal | Materials Science Forum |
| Volume | 264-268 |
| Issue number | PART 2 |
| Publication status | Published - 1998 |
| Externally published | Yes |
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Keywords
- AFM
- Atomic Hydrogen
- Cubic GaN
- GaAs Substrate
- High-Resolution XRD
- MBE
- Reciprocal Space Mapping
- RHEED
ASJC Scopus subject areas
- Materials Science(all)
Cite this
MBE growth of device-Quality cubic GaN on atomically flat (001) GaAs prepared by atomic-Hydrogen treatment at high-Temperatures. / Yoshikawa, A.; Qin, Z.; Nagano, H.; Sugure, Y.; Jia, A.; Kobayashi, Masakazu; Kato, Y.; Takahashi, K.
In: Materials Science Forum, Vol. 264-268, No. PART 2, 1998, p. 1221-1224.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - MBE growth of device-Quality cubic GaN on atomically flat (001) GaAs prepared by atomic-Hydrogen treatment at high-Temperatures
AU - Yoshikawa, A.
AU - Qin, Z.
AU - Nagano, H.
AU - Sugure, Y.
AU - Jia, A.
AU - Kobayashi, Masakazu
AU - Kato, Y.
AU - Takahashi, K.
PY - 1998
Y1 - 1998
N2 - Growth of high-quality and/or "purely cubic" GaN layers on (001) GaAs has been investigated by an rf-radical source MBE paying particular attention to the effect of surface cleaning and smoothing on the structural properties of the GaN epilayers. Device-quality c-GaN layers can be grown on the (001) GaAs treated by atomic hydrogen at high temperatures; the FWHM of X-ray rocking curve for the c-GaN (002) plane is as small as 80-90 arcsec and also the inclusion of the hexagonal phase GaN in the epilayer can be less than 4×10-3.
AB - Growth of high-quality and/or "purely cubic" GaN layers on (001) GaAs has been investigated by an rf-radical source MBE paying particular attention to the effect of surface cleaning and smoothing on the structural properties of the GaN epilayers. Device-quality c-GaN layers can be grown on the (001) GaAs treated by atomic hydrogen at high temperatures; the FWHM of X-ray rocking curve for the c-GaN (002) plane is as small as 80-90 arcsec and also the inclusion of the hexagonal phase GaN in the epilayer can be less than 4×10-3.
KW - AFM
KW - Atomic Hydrogen
KW - Cubic GaN
KW - GaAs Substrate
KW - High-Resolution XRD
KW - MBE
KW - Reciprocal Space Mapping
KW - RHEED
UR - http://www.scopus.com/inward/record.url?scp=11644299599&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=11644299599&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:11644299599
VL - 264-268
SP - 1221
EP - 1224
JO - Materials Science Forum
JF - Materials Science Forum
SN - 0255-5476
IS - PART 2
ER -