MBE growth of device-Quality cubic GaN on atomically flat (001) GaAs prepared by atomic-Hydrogen treatment at high-Temperatures

A. Yoshikawa, Z. Qin, H. Nagano, Y. Sugure, A. Jia, Masakazu Kobayashi, Y. Kato, K. Takahashi

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Growth of high-quality and/or "purely cubic" GaN layers on (001) GaAs has been investigated by an rf-radical source MBE paying particular attention to the effect of surface cleaning and smoothing on the structural properties of the GaN epilayers. Device-quality c-GaN layers can be grown on the (001) GaAs treated by atomic hydrogen at high temperatures; the FWHM of X-ray rocking curve for the c-GaN (002) plane is as small as 80-90 arcsec and also the inclusion of the hexagonal phase GaN in the epilayer can be less than 4×10-3.

Original languageEnglish
Pages (from-to)1221-1224
Number of pages4
JournalMaterials Science Forum
Volume264-268
Issue numberPART 2
Publication statusPublished - 1998
Externally publishedYes

Fingerprint

Epilayers
Molecular beam epitaxy
Hydrogen
Surface cleaning
hydrogen
Full width at half maximum
smoothing
cleaning
Structural properties
inclusions
X rays
Temperature
curves
x rays
gallium arsenide

Keywords

  • AFM
  • Atomic Hydrogen
  • Cubic GaN
  • GaAs Substrate
  • High-Resolution XRD
  • MBE
  • Reciprocal Space Mapping
  • RHEED

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Yoshikawa, A., Qin, Z., Nagano, H., Sugure, Y., Jia, A., Kobayashi, M., ... Takahashi, K. (1998). MBE growth of device-Quality cubic GaN on atomically flat (001) GaAs prepared by atomic-Hydrogen treatment at high-Temperatures. Materials Science Forum, 264-268(PART 2), 1221-1224.

MBE growth of device-Quality cubic GaN on atomically flat (001) GaAs prepared by atomic-Hydrogen treatment at high-Temperatures. / Yoshikawa, A.; Qin, Z.; Nagano, H.; Sugure, Y.; Jia, A.; Kobayashi, Masakazu; Kato, Y.; Takahashi, K.

In: Materials Science Forum, Vol. 264-268, No. PART 2, 1998, p. 1221-1224.

Research output: Contribution to journalArticle

Yoshikawa, A, Qin, Z, Nagano, H, Sugure, Y, Jia, A, Kobayashi, M, Kato, Y & Takahashi, K 1998, 'MBE growth of device-Quality cubic GaN on atomically flat (001) GaAs prepared by atomic-Hydrogen treatment at high-Temperatures', Materials Science Forum, vol. 264-268, no. PART 2, pp. 1221-1224.
Yoshikawa, A. ; Qin, Z. ; Nagano, H. ; Sugure, Y. ; Jia, A. ; Kobayashi, Masakazu ; Kato, Y. ; Takahashi, K. / MBE growth of device-Quality cubic GaN on atomically flat (001) GaAs prepared by atomic-Hydrogen treatment at high-Temperatures. In: Materials Science Forum. 1998 ; Vol. 264-268, No. PART 2. pp. 1221-1224.
@article{af27a91d42c84015ba8e71b0831b3919,
title = "MBE growth of device-Quality cubic GaN on atomically flat (001) GaAs prepared by atomic-Hydrogen treatment at high-Temperatures",
abstract = "Growth of high-quality and/or {"}purely cubic{"} GaN layers on (001) GaAs has been investigated by an rf-radical source MBE paying particular attention to the effect of surface cleaning and smoothing on the structural properties of the GaN epilayers. Device-quality c-GaN layers can be grown on the (001) GaAs treated by atomic hydrogen at high temperatures; the FWHM of X-ray rocking curve for the c-GaN (002) plane is as small as 80-90 arcsec and also the inclusion of the hexagonal phase GaN in the epilayer can be less than 4×10-3.",
keywords = "AFM, Atomic Hydrogen, Cubic GaN, GaAs Substrate, High-Resolution XRD, MBE, Reciprocal Space Mapping, RHEED",
author = "A. Yoshikawa and Z. Qin and H. Nagano and Y. Sugure and A. Jia and Masakazu Kobayashi and Y. Kato and K. Takahashi",
year = "1998",
language = "English",
volume = "264-268",
pages = "1221--1224",
journal = "Materials Science Forum",
issn = "0255-5476",
publisher = "Trans Tech Publications",
number = "PART 2",

}

TY - JOUR

T1 - MBE growth of device-Quality cubic GaN on atomically flat (001) GaAs prepared by atomic-Hydrogen treatment at high-Temperatures

AU - Yoshikawa, A.

AU - Qin, Z.

AU - Nagano, H.

AU - Sugure, Y.

AU - Jia, A.

AU - Kobayashi, Masakazu

AU - Kato, Y.

AU - Takahashi, K.

PY - 1998

Y1 - 1998

N2 - Growth of high-quality and/or "purely cubic" GaN layers on (001) GaAs has been investigated by an rf-radical source MBE paying particular attention to the effect of surface cleaning and smoothing on the structural properties of the GaN epilayers. Device-quality c-GaN layers can be grown on the (001) GaAs treated by atomic hydrogen at high temperatures; the FWHM of X-ray rocking curve for the c-GaN (002) plane is as small as 80-90 arcsec and also the inclusion of the hexagonal phase GaN in the epilayer can be less than 4×10-3.

AB - Growth of high-quality and/or "purely cubic" GaN layers on (001) GaAs has been investigated by an rf-radical source MBE paying particular attention to the effect of surface cleaning and smoothing on the structural properties of the GaN epilayers. Device-quality c-GaN layers can be grown on the (001) GaAs treated by atomic hydrogen at high temperatures; the FWHM of X-ray rocking curve for the c-GaN (002) plane is as small as 80-90 arcsec and also the inclusion of the hexagonal phase GaN in the epilayer can be less than 4×10-3.

KW - AFM

KW - Atomic Hydrogen

KW - Cubic GaN

KW - GaAs Substrate

KW - High-Resolution XRD

KW - MBE

KW - Reciprocal Space Mapping

KW - RHEED

UR - http://www.scopus.com/inward/record.url?scp=11644299599&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=11644299599&partnerID=8YFLogxK

M3 - Article

VL - 264-268

SP - 1221

EP - 1224

JO - Materials Science Forum

JF - Materials Science Forum

SN - 0255-5476

IS - PART 2

ER -