Abstract
Growth of high-quality and/or "purely cubic" GaN layers on (001) GaAs has been investigated by an rf-radical source MBE paying particular attention to the effect of surface cleaning and smoothing on the structural properties of the GaN epilayers. Device-quality c-GaN layers can be grown on the (001) GaAs treated by atomic hydrogen at high temperatures; the FWHM of X-ray rocking curve for the c-GaN (002) plane is as small as 80-90 arcsec and also the inclusion of the hexagonal phase GaN in the epilayer can be less than 4×10-3.
| Original language | English |
|---|---|
| Pages (from-to) | 1221-1224 |
| Number of pages | 4 |
| Journal | Materials Science Forum |
| Volume | 264-268 |
| Issue number | PART 2 |
| Publication status | Published - 1998 Dec 1 |
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Keywords
- AFM
- Atomic Hydrogen
- Cubic GaN
- GaAs Substrate
- High-Resolution XRD
- MBE
- RHEED
- Reciprocal Space Mapping
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
Cite this
Yoshikawa, A., Qin, Z., Nagano, H., Sugure, Y., Jia, A., Kobayashi, M., Kato, Y., & Takahashi, K. (1998). MBE growth of device-Quality cubic GaN on atomically flat (001) GaAs prepared by atomic-Hydrogen treatment at high-Temperatures. Materials Science Forum, 264-268(PART 2), 1221-1224.