MBE growth of device-Quality cubic GaN on atomically flat (001) GaAs prepared by atomic-Hydrogen treatment at high-Temperatures

A. Yoshikawa; Z. Qin; H. Nagano; Y. Sugure; A. Jia; M. Kobayashi; Y. Kato; K. Takahashi

doi:10.4028/www.scientific.net/msf.264-268.1221

MBE growth of device-Quality cubic GaN on atomically flat (001) GaAs prepared by atomic-Hydrogen treatment at high-Temperatures

A. Yoshikawa^*, Z. Qin, H. Nagano, Y. Sugure, A. Jia, M. Kobayashi, Y. Kato, K. Takahashi

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Growth of high-quality and/or "purely cubic" GaN layers on (001) GaAs has been investigated by an rf-radical source MBE paying particular attention to the effect of surface cleaning and smoothing on the structural properties of the GaN epilayers. Device-quality c-GaN layers can be grown on the (001) GaAs treated by atomic hydrogen at high temperatures; the FWHM of X-ray rocking curve for the c-GaN (002) plane is as small as 80-90 arcsec and also the inclusion of the hexagonal phase GaN in the epilayer can be less than 4×10^-3.

Original language	English
Pages (from-to)	1221-1224
Number of pages	4
Journal	Materials Science Forum
Volume	264-268
Issue number	PART 2
DOIs	https://doi.org/10.4028/www.scientific.net/msf.264-268.1221
Publication status	Published - 1998
Externally published	Yes

Keywords

AFM
Atomic Hydrogen
Cubic GaN
GaAs Substrate
High-Resolution XRD
MBE
RHEED
Reciprocal Space Mapping

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.4028/www.scientific.net/msf.264-268.1221

Cite this

@article{af27a91d42c84015ba8e71b0831b3919,

title = "MBE growth of device-Quality cubic GaN on atomically flat (001) GaAs prepared by atomic-Hydrogen treatment at high-Temperatures",

abstract = "Growth of high-quality and/or {"}purely cubic{"} GaN layers on (001) GaAs has been investigated by an rf-radical source MBE paying particular attention to the effect of surface cleaning and smoothing on the structural properties of the GaN epilayers. Device-quality c-GaN layers can be grown on the (001) GaAs treated by atomic hydrogen at high temperatures; the FWHM of X-ray rocking curve for the c-GaN (002) plane is as small as 80-90 arcsec and also the inclusion of the hexagonal phase GaN in the epilayer can be less than 4×10-3.",

keywords = "AFM, Atomic Hydrogen, Cubic GaN, GaAs Substrate, High-Resolution XRD, MBE, RHEED, Reciprocal Space Mapping",

author = "A. Yoshikawa and Z. Qin and H. Nagano and Y. Sugure and A. Jia and M. Kobayashi and Y. Kato and K. Takahashi",

year = "1998",

doi = "10.4028/www.scientific.net/msf.264-268.1221",

language = "English",

volume = "264-268",

pages = "1221--1224",

journal = "Materials Science Forum",

issn = "0255-5476",

publisher = "Trans Tech Publications",

number = "PART 2",

}

TY - JOUR

T1 - MBE growth of device-Quality cubic GaN on atomically flat (001) GaAs prepared by atomic-Hydrogen treatment at high-Temperatures

AU - Yoshikawa, A.

AU - Qin, Z.

AU - Nagano, H.

AU - Sugure, Y.

AU - Jia, A.

AU - Kobayashi, M.

AU - Kato, Y.

AU - Takahashi, K.

PY - 1998

Y1 - 1998

N2 - Growth of high-quality and/or "purely cubic" GaN layers on (001) GaAs has been investigated by an rf-radical source MBE paying particular attention to the effect of surface cleaning and smoothing on the structural properties of the GaN epilayers. Device-quality c-GaN layers can be grown on the (001) GaAs treated by atomic hydrogen at high temperatures; the FWHM of X-ray rocking curve for the c-GaN (002) plane is as small as 80-90 arcsec and also the inclusion of the hexagonal phase GaN in the epilayer can be less than 4×10-3.

AB - Growth of high-quality and/or "purely cubic" GaN layers on (001) GaAs has been investigated by an rf-radical source MBE paying particular attention to the effect of surface cleaning and smoothing on the structural properties of the GaN epilayers. Device-quality c-GaN layers can be grown on the (001) GaAs treated by atomic hydrogen at high temperatures; the FWHM of X-ray rocking curve for the c-GaN (002) plane is as small as 80-90 arcsec and also the inclusion of the hexagonal phase GaN in the epilayer can be less than 4×10-3.

KW - AFM

KW - Atomic Hydrogen

KW - Cubic GaN

KW - GaAs Substrate

KW - High-Resolution XRD

KW - MBE

KW - RHEED

KW - Reciprocal Space Mapping

UR - http://www.scopus.com/inward/record.url?scp=11644299599&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=11644299599&partnerID=8YFLogxK

U2 - 10.4028/www.scientific.net/msf.264-268.1221

DO - 10.4028/www.scientific.net/msf.264-268.1221

M3 - Article

AN - SCOPUS:11644299599

VL - 264-268

SP - 1221

EP - 1224

JO - Materials Science Forum

JF - Materials Science Forum

SN - 0255-5476

IS - PART 2

ER -

MBE growth of device-Quality cubic GaN on atomically flat (001) GaAs prepared by atomic-Hydrogen treatment at high-Temperatures

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this