MBE growth of GaN on MgO substrate

Ryotaro Suzuki; Atsushi Kawaharazuka; Yoshiji Horikoshi

doi:10.1016/j.jcrysgro.2006.11.095

MBE growth of GaN on MgO substrate

Ryotaro Suzuki^*, Atsushi Kawaharazuka, Yoshiji Horikoshi

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

We grow GaN on MgO substrate by plasma-assisted molecular beam epitaxy (MBE). It is revealed that hexagonal GaN grows on (1 1 1) MgO substrate and cubic GaN grows on (0 0 1) MgO substrate according to the symmetry of the substrates. Mixture of hexagonal phase into cubic GaN is found to be formed in the growth on (0 0 1) MgO, and is investigated by reciprocal space mapping. We obtained GaN epitaxial films with flat surface morphology and good crystalline quality on (1 1 1) MgO substrate.

Original language	English
Pages (from-to)	478-481
Number of pages	4
Journal	Journal of Crystal Growth
Volume	301-302
Issue number	SPEC. ISS.
DOIs	https://doi.org/10.1016/j.jcrysgro.2006.11.095
Publication status	Published - 2007 Apr

Keywords

A1. Crystal structure
A1. Photoluminescence
A1. X-ray diffraction
A3. Molecular beam epitaxy
B1. Nitrides
B2. Semiconducting gallium compounds

ASJC Scopus subject areas

Condensed Matter Physics

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10.1016/j.jcrysgro.2006.11.095

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title = "MBE growth of GaN on MgO substrate",

abstract = "We grow GaN on MgO substrate by plasma-assisted molecular beam epitaxy (MBE). It is revealed that hexagonal GaN grows on (1 1 1) MgO substrate and cubic GaN grows on (0 0 1) MgO substrate according to the symmetry of the substrates. Mixture of hexagonal phase into cubic GaN is found to be formed in the growth on (0 0 1) MgO, and is investigated by reciprocal space mapping. We obtained GaN epitaxial films with flat surface morphology and good crystalline quality on (1 1 1) MgO substrate.",

keywords = "A1. Crystal structure, A1. Photoluminescence, A1. X-ray diffraction, A3. Molecular beam epitaxy, B1. Nitrides, B2. Semiconducting gallium compounds",

author = "Ryotaro Suzuki and Atsushi Kawaharazuka and Yoshiji Horikoshi",

year = "2007",

month = apr,

doi = "10.1016/j.jcrysgro.2006.11.095",

language = "English",

volume = "301-302",

pages = "478--481",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "SPEC. ISS.",

}

TY - JOUR

T1 - MBE growth of GaN on MgO substrate

AU - Suzuki, Ryotaro

AU - Kawaharazuka, Atsushi

AU - Horikoshi, Yoshiji

PY - 2007/4

Y1 - 2007/4

N2 - We grow GaN on MgO substrate by plasma-assisted molecular beam epitaxy (MBE). It is revealed that hexagonal GaN grows on (1 1 1) MgO substrate and cubic GaN grows on (0 0 1) MgO substrate according to the symmetry of the substrates. Mixture of hexagonal phase into cubic GaN is found to be formed in the growth on (0 0 1) MgO, and is investigated by reciprocal space mapping. We obtained GaN epitaxial films with flat surface morphology and good crystalline quality on (1 1 1) MgO substrate.

AB - We grow GaN on MgO substrate by plasma-assisted molecular beam epitaxy (MBE). It is revealed that hexagonal GaN grows on (1 1 1) MgO substrate and cubic GaN grows on (0 0 1) MgO substrate according to the symmetry of the substrates. Mixture of hexagonal phase into cubic GaN is found to be formed in the growth on (0 0 1) MgO, and is investigated by reciprocal space mapping. We obtained GaN epitaxial films with flat surface morphology and good crystalline quality on (1 1 1) MgO substrate.

KW - A1. Crystal structure

KW - A1. Photoluminescence

KW - A1. X-ray diffraction

KW - A3. Molecular beam epitaxy

KW - B1. Nitrides

KW - B2. Semiconducting gallium compounds

UR - http://www.scopus.com/inward/record.url?scp=33947329150&partnerID=8YFLogxK

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U2 - 10.1016/j.jcrysgro.2006.11.095

DO - 10.1016/j.jcrysgro.2006.11.095

M3 - Article

AN - SCOPUS:33947329150

SN - 0022-0248

VL - 301-302

SP - 478

EP - 481

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - SPEC. ISS.

ER -

MBE growth of GaN on MgO substrate

Abstract

Keywords

ASJC Scopus subject areas

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