MBE growth of GaN on MgO substrate

Ryotaro Suzuki, Atsushi Kawaharazuka, Yoshiji Horikoshi

Research output: Contribution to journalArticle

10 Citations (Scopus)


We grow GaN on MgO substrate by plasma-assisted molecular beam epitaxy (MBE). It is revealed that hexagonal GaN grows on (1 1 1) MgO substrate and cubic GaN grows on (0 0 1) MgO substrate according to the symmetry of the substrates. Mixture of hexagonal phase into cubic GaN is found to be formed in the growth on (0 0 1) MgO, and is investigated by reciprocal space mapping. We obtained GaN epitaxial films with flat surface morphology and good crystalline quality on (1 1 1) MgO substrate.

Original languageEnglish
Pages (from-to)478-481
Number of pages4
JournalJournal of Crystal Growth
Issue numberSPEC. ISS.
Publication statusPublished - 2007 Apr


  • A1. Crystal structure
  • A1. Photoluminescence
  • A1. X-ray diffraction
  • A3. Molecular beam epitaxy
  • B1. Nitrides
  • B2. Semiconducting gallium compounds

ASJC Scopus subject areas

  • Condensed Matter Physics

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    Suzuki, R., Kawaharazuka, A., & Horikoshi, Y. (2007). MBE growth of GaN on MgO substrate. Journal of Crystal Growth, 301-302(SPEC. ISS.), 478-481. https://doi.org/10.1016/j.jcrysgro.2006.11.095