MBE growth of InAs/AlInAs strained-layer multi quantum wells for optical device applications

Yuichi Matsushima; Hiroshi Kato; Katsuyuki Utaka; Kazuo Sakai

doi:10.1016/0022-0248(89)90385-0

MBE growth of InAs/AlInAs strained-layer multi quantum wells for optical device applications

Yuichi Matsushima^*, Hiroshi Kato, Katsuyuki Utaka, Kazuo Sakai

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

InAs/Al_0.48In_0.52As strained-layer single quantum wells and strained-layer multi quantum wells have been grown by molecular beam epitaxy (MBE) on (100)-InP substrates. Although there is highly biaxial compressive strain in this material, high-crystalline quality without misfit dislocations is demonstrated by transmission electron microscopy (TEM) and low temperature photoluminescence (PL) measurements. PL peaks have been successfully observed from the MQWs with well width L_z of 9-40 Å. As for the sample with L_z = 9 Å, a large energy shift of 750 meV from the band-gap of bulk InAs was confirmed. A laser diode with InAs/AlInAs MQW active layer was also fabricated and the stimulated emission at 1.15 μm wavelength was confirmed at 77 K for the first time.

Original language	English
Pages (from-to)	210-214
Number of pages	5
Journal	Journal of Crystal Growth
Volume	95
Issue number	1-4
DOIs	https://doi.org/10.1016/0022-0248(89)90385-0
Publication status	Published - 1989 Feb 2
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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Cite this

@article{16a430c41ca84c9bb8191865848ca7d8,

title = "MBE growth of InAs/AlInAs strained-layer multi quantum wells for optical device applications",

abstract = "InAs/Al0.48In0.52As strained-layer single quantum wells and strained-layer multi quantum wells have been grown by molecular beam epitaxy (MBE) on (100)-InP substrates. Although there is highly biaxial compressive strain in this material, high-crystalline quality without misfit dislocations is demonstrated by transmission electron microscopy (TEM) and low temperature photoluminescence (PL) measurements. PL peaks have been successfully observed from the MQWs with well width Lz of 9-40 {\AA}. As for the sample with Lz = 9 {\AA}, a large energy shift of 750 meV from the band-gap of bulk InAs was confirmed. A laser diode with InAs/AlInAs MQW active layer was also fabricated and the stimulated emission at 1.15 μm wavelength was confirmed at 77 K for the first time.",

author = "Yuichi Matsushima and Hiroshi Kato and Katsuyuki Utaka and Kazuo Sakai",

year = "1989",

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doi = "10.1016/0022-0248(89)90385-0",

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T1 - MBE growth of InAs/AlInAs strained-layer multi quantum wells for optical device applications

AU - Matsushima, Yuichi

AU - Kato, Hiroshi

AU - Utaka, Katsuyuki

AU - Sakai, Kazuo

PY - 1989/2/2

Y1 - 1989/2/2

N2 - InAs/Al0.48In0.52As strained-layer single quantum wells and strained-layer multi quantum wells have been grown by molecular beam epitaxy (MBE) on (100)-InP substrates. Although there is highly biaxial compressive strain in this material, high-crystalline quality without misfit dislocations is demonstrated by transmission electron microscopy (TEM) and low temperature photoluminescence (PL) measurements. PL peaks have been successfully observed from the MQWs with well width Lz of 9-40 Å. As for the sample with Lz = 9 Å, a large energy shift of 750 meV from the band-gap of bulk InAs was confirmed. A laser diode with InAs/AlInAs MQW active layer was also fabricated and the stimulated emission at 1.15 μm wavelength was confirmed at 77 K for the first time.

AB - InAs/Al0.48In0.52As strained-layer single quantum wells and strained-layer multi quantum wells have been grown by molecular beam epitaxy (MBE) on (100)-InP substrates. Although there is highly biaxial compressive strain in this material, high-crystalline quality without misfit dislocations is demonstrated by transmission electron microscopy (TEM) and low temperature photoluminescence (PL) measurements. PL peaks have been successfully observed from the MQWs with well width Lz of 9-40 Å. As for the sample with Lz = 9 Å, a large energy shift of 750 meV from the band-gap of bulk InAs was confirmed. A laser diode with InAs/AlInAs MQW active layer was also fabricated and the stimulated emission at 1.15 μm wavelength was confirmed at 77 K for the first time.

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JO - Journal of Crystal Growth

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ER -

MBE growth of InAs/AlInAs strained-layer multi quantum wells for optical device applications

Abstract

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