MBE growth of InAs/AlInAs strained-layer multi quantum wells for optical device applications

Yuichi Matsushima, Hiroshi Kato, Katsuyuki Utaka, Kazuo Sakai

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

InAs/Al0.48In0.52As strained-layer single quantum wells and strained-layer multi quantum wells have been grown by molecular beam epitaxy (MBE) on (100)-InP substrates. Although there is highly biaxial compressive strain in this material, high-crystalline quality without misfit dislocations is demonstrated by transmission electron microscopy (TEM) and low temperature photoluminescence (PL) measurements. PL peaks have been successfully observed from the MQWs with well width Lz of 9-40 Å. As for the sample with Lz = 9 Å, a large energy shift of 750 meV from the band-gap of bulk InAs was confirmed. A laser diode with InAs/AlInAs MQW active layer was also fabricated and the stimulated emission at 1.15 μm wavelength was confirmed at 77 K for the first time.

Original languageEnglish
Pages (from-to)210-214
Number of pages5
JournalJournal of Crystal Growth
Volume95
Issue number1-4
DOIs
Publication statusPublished - 1989 Feb 2
Externally publishedYes

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Optical devices
Molecular beam epitaxy
Semiconductor quantum wells
Photoluminescence
molecular beam epitaxy
quantum wells
Stimulated emission
Dislocations (crystals)
photoluminescence
Semiconductor lasers
Energy gap
Crystalline materials
Transmission electron microscopy
stimulated emission
Wavelength
Substrates
semiconductor lasers
transmission electron microscopy
shift
wavelengths

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

MBE growth of InAs/AlInAs strained-layer multi quantum wells for optical device applications. / Matsushima, Yuichi; Kato, Hiroshi; Utaka, Katsuyuki; Sakai, Kazuo.

In: Journal of Crystal Growth, Vol. 95, No. 1-4, 02.02.1989, p. 210-214.

Research output: Contribution to journalArticle

Matsushima, Yuichi ; Kato, Hiroshi ; Utaka, Katsuyuki ; Sakai, Kazuo. / MBE growth of InAs/AlInAs strained-layer multi quantum wells for optical device applications. In: Journal of Crystal Growth. 1989 ; Vol. 95, No. 1-4. pp. 210-214.
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