MBE growth of InAs/AlInAs strained-layer multi quantum wells for optical device applications

Yuichi Matsushima, Hiroshi Kato, Katsuyuki Utaka, Kazuo Sakai

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5 Citations (Scopus)


InAs/Al0.48In0.52As strained-layer single quantum wells and strained-layer multi quantum wells have been grown by molecular beam epitaxy (MBE) on (100)-InP substrates. Although there is highly biaxial compressive strain in this material, high-crystalline quality without misfit dislocations is demonstrated by transmission electron microscopy (TEM) and low temperature photoluminescence (PL) measurements. PL peaks have been successfully observed from the MQWs with well width Lz of 9-40 Å. As for the sample with Lz = 9 Å, a large energy shift of 750 meV from the band-gap of bulk InAs was confirmed. A laser diode with InAs/AlInAs MQW active layer was also fabricated and the stimulated emission at 1.15 μm wavelength was confirmed at 77 K for the first time.

Original languageEnglish
Pages (from-to)210-214
Number of pages5
JournalJournal of Crystal Growth
Issue number1-4
Publication statusPublished - 1989 Feb 2


ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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