MBE growth of sulfur-based binary and ternary widegap II-VI alloys using elemental sulfur source

A. W. Jia, T. Yamada, Masakazu Kobayashi, A. Yoshikawa

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

We report on the molecular beam epitaxial (MBE) growth of sulfur-based binary and ternary widegap II-VI alloys using elemental sulfur source. The growth temperatures used arranged from 180 to 310°C. The valved-cracker cell with three independently controllable heaters is used for the S source. The epitaxial layers were grown using thermally cracked S source at 200, 500 and 900°C, and the film quality was characterized by X-ray diffraction and photoluminescence.

Original languageEnglish
Title of host publicationMaterials Science Forum
PublisherTrans Tech Publ
Pages403-406
Number of pages4
Volume182-184
Publication statusPublished - 1995
Externally publishedYes
EventProceedings of the 4th International Workshop on Semimagnetic (Diluted Magnetic) Semiconductors - Linz, Austria
Duration: 1994 Sep 261994 Sep 28

Other

OtherProceedings of the 4th International Workshop on Semimagnetic (Diluted Magnetic) Semiconductors
CityLinz, Austria
Period94/9/2694/9/28

Fingerprint

Molecular beams
Sulfur
Epitaxial growth
Epitaxial layers
Growth temperature
Photoluminescence
X ray diffraction

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Jia, A. W., Yamada, T., Kobayashi, M., & Yoshikawa, A. (1995). MBE growth of sulfur-based binary and ternary widegap II-VI alloys using elemental sulfur source. In Materials Science Forum (Vol. 182-184, pp. 403-406). Trans Tech Publ.

MBE growth of sulfur-based binary and ternary widegap II-VI alloys using elemental sulfur source. / Jia, A. W.; Yamada, T.; Kobayashi, Masakazu; Yoshikawa, A.

Materials Science Forum. Vol. 182-184 Trans Tech Publ, 1995. p. 403-406.

Research output: Chapter in Book/Report/Conference proceedingChapter

Jia, AW, Yamada, T, Kobayashi, M & Yoshikawa, A 1995, MBE growth of sulfur-based binary and ternary widegap II-VI alloys using elemental sulfur source. in Materials Science Forum. vol. 182-184, Trans Tech Publ, pp. 403-406, Proceedings of the 4th International Workshop on Semimagnetic (Diluted Magnetic) Semiconductors, Linz, Austria, 94/9/26.
Jia AW, Yamada T, Kobayashi M, Yoshikawa A. MBE growth of sulfur-based binary and ternary widegap II-VI alloys using elemental sulfur source. In Materials Science Forum. Vol. 182-184. Trans Tech Publ. 1995. p. 403-406
Jia, A. W. ; Yamada, T. ; Kobayashi, Masakazu ; Yoshikawa, A. / MBE growth of sulfur-based binary and ternary widegap II-VI alloys using elemental sulfur source. Materials Science Forum. Vol. 182-184 Trans Tech Publ, 1995. pp. 403-406
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