MBE growth of widegap II-VI injection lasers and LEDs

Masakazu Kobayashi, Robert L. Gunshor, Arto V. Nurmikko, Nobuo Otsuka

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The successful p-doping of ZnSe by substitutional nitrogen using a plasma cell incorporated into a molecular beam epitaxy chamber has led to the development of electroluminescent devices employing carrier injection at a p-n junction and in which the active region is based on (Zn,Cd) Se/Zn(S,Se) multiple quantum well structures. We report on the performance of p-n junction MQW diode lasers and LEDs which are grown on both p-type and n-type GaAs substrates, and where sulfur is, or is not incorporated. For all structures, efforts were made to minimize dislocations by lattice matching the active II-VI region to the GaAs substrate. Some designs have dislocation densities below 105 cm-2. In this work we have obtained pulsed high power, high quantum efficiency laser emission up to room temperature conditions, and continuous operation at liquid nitrogen temperatures. Efficient LED devices are described which operate in the blue (494 nm) at room temperature.

Original languageEnglish
Pages (from-to)1-10
Number of pages10
JournalOptoelectronics Tokyo
Volume7
Issue number1
Publication statusPublished - 1992 Jun
Externally publishedYes

Fingerprint

Injection lasers
Molecular beam epitaxy
Light emitting diodes
Luminescent devices
Liquid nitrogen
Substrates
Quantum efficiency
Temperature
Semiconductor quantum wells
Semiconductor lasers
Sulfur
Doping (additives)
Nitrogen
Plasmas
Lasers

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Kobayashi, M., Gunshor, R. L., Nurmikko, A. V., & Otsuka, N. (1992). MBE growth of widegap II-VI injection lasers and LEDs. Optoelectronics Tokyo, 7(1), 1-10.

MBE growth of widegap II-VI injection lasers and LEDs. / Kobayashi, Masakazu; Gunshor, Robert L.; Nurmikko, Arto V.; Otsuka, Nobuo.

In: Optoelectronics Tokyo, Vol. 7, No. 1, 06.1992, p. 1-10.

Research output: Contribution to journalArticle

Kobayashi, M, Gunshor, RL, Nurmikko, AV & Otsuka, N 1992, 'MBE growth of widegap II-VI injection lasers and LEDs', Optoelectronics Tokyo, vol. 7, no. 1, pp. 1-10.
Kobayashi M, Gunshor RL, Nurmikko AV, Otsuka N. MBE growth of widegap II-VI injection lasers and LEDs. Optoelectronics Tokyo. 1992 Jun;7(1):1-10.
Kobayashi, Masakazu ; Gunshor, Robert L. ; Nurmikko, Arto V. ; Otsuka, Nobuo. / MBE growth of widegap II-VI injection lasers and LEDs. In: Optoelectronics Tokyo. 1992 ; Vol. 7, No. 1. pp. 1-10.
@article{8cc062106b2c48f5ab600b428f5e1acd,
title = "MBE growth of widegap II-VI injection lasers and LEDs",
abstract = "The successful p-doping of ZnSe by substitutional nitrogen using a plasma cell incorporated into a molecular beam epitaxy chamber has led to the development of electroluminescent devices employing carrier injection at a p-n junction and in which the active region is based on (Zn,Cd) Se/Zn(S,Se) multiple quantum well structures. We report on the performance of p-n junction MQW diode lasers and LEDs which are grown on both p-type and n-type GaAs substrates, and where sulfur is, or is not incorporated. For all structures, efforts were made to minimize dislocations by lattice matching the active II-VI region to the GaAs substrate. Some designs have dislocation densities below 105 cm-2. In this work we have obtained pulsed high power, high quantum efficiency laser emission up to room temperature conditions, and continuous operation at liquid nitrogen temperatures. Efficient LED devices are described which operate in the blue (494 nm) at room temperature.",
author = "Masakazu Kobayashi and Gunshor, {Robert L.} and Nurmikko, {Arto V.} and Nobuo Otsuka",
year = "1992",
month = "6",
language = "English",
volume = "7",
pages = "1--10",
journal = "Optoelectronics - Devices and Technologies",
issn = "0912-5434",
publisher = "Mita Press",
number = "1",

}

TY - JOUR

T1 - MBE growth of widegap II-VI injection lasers and LEDs

AU - Kobayashi, Masakazu

AU - Gunshor, Robert L.

AU - Nurmikko, Arto V.

AU - Otsuka, Nobuo

PY - 1992/6

Y1 - 1992/6

N2 - The successful p-doping of ZnSe by substitutional nitrogen using a plasma cell incorporated into a molecular beam epitaxy chamber has led to the development of electroluminescent devices employing carrier injection at a p-n junction and in which the active region is based on (Zn,Cd) Se/Zn(S,Se) multiple quantum well structures. We report on the performance of p-n junction MQW diode lasers and LEDs which are grown on both p-type and n-type GaAs substrates, and where sulfur is, or is not incorporated. For all structures, efforts were made to minimize dislocations by lattice matching the active II-VI region to the GaAs substrate. Some designs have dislocation densities below 105 cm-2. In this work we have obtained pulsed high power, high quantum efficiency laser emission up to room temperature conditions, and continuous operation at liquid nitrogen temperatures. Efficient LED devices are described which operate in the blue (494 nm) at room temperature.

AB - The successful p-doping of ZnSe by substitutional nitrogen using a plasma cell incorporated into a molecular beam epitaxy chamber has led to the development of electroluminescent devices employing carrier injection at a p-n junction and in which the active region is based on (Zn,Cd) Se/Zn(S,Se) multiple quantum well structures. We report on the performance of p-n junction MQW diode lasers and LEDs which are grown on both p-type and n-type GaAs substrates, and where sulfur is, or is not incorporated. For all structures, efforts were made to minimize dislocations by lattice matching the active II-VI region to the GaAs substrate. Some designs have dislocation densities below 105 cm-2. In this work we have obtained pulsed high power, high quantum efficiency laser emission up to room temperature conditions, and continuous operation at liquid nitrogen temperatures. Efficient LED devices are described which operate in the blue (494 nm) at room temperature.

UR - http://www.scopus.com/inward/record.url?scp=0026880315&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0026880315&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0026880315

VL - 7

SP - 1

EP - 10

JO - Optoelectronics - Devices and Technologies

JF - Optoelectronics - Devices and Technologies

SN - 0912-5434

IS - 1

ER -