MBE growth of ZnSe/MgCdS and ZnCdS/MgCdS superlattices for UV-A sensors

J. Ueno, K. Ogura, A. Ichiba, S. Katsuta, Masakazu Kobayashi, K. Onomitsu, Y. Horikoshi

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    2 Citations (Scopus)

    Abstract

    ZnSe/MgCdS and ZnCdS/MgCdS superlattices were grown on semi insulating (001) oriented GaAs substrates by molecular beam epitaxy (MBE). The crystal quality and optical properties were examined for both superlattices. The observed photoluminescence (PL) peak intensity of ZnCdS/MgCdS was much stronger than that of ZnSe/MgCdS while ZnSe/MgCdS showed sharper luminescence line width. The PL peak energy position was compared with the theoretical value derived from the Kronig-Penny model. The degradation of crystal quality was observed by increasing Mg content in MgCdS layer and drastic PL property degradation was observed when the Mg content in the layer exceeded a certain value. Two superlattices were applied to the UV-A sensor of the metal-semiconductor-metal (MSM) configuration. Both photodetectors exhibited a high sensitivity in the UV-A region with a sharp cut-off in the visible wave-length region; the ON-OFF ratio of sensor was about 103 for both structures.

    Original languageEnglish
    Title of host publicationPhysica Status Solidi C: Conferences
    Pages1225-1228
    Number of pages4
    Volume3
    Edition4
    DOIs
    Publication statusPublished - 2006
    Event12th International Conference on II-VI Compounds - Warsaw, Poland
    Duration: 2005 Sep 122005 Sep 16

    Other

    Other12th International Conference on II-VI Compounds
    CountryPoland
    CityWarsaw
    Period05/9/1205/9/16

    Fingerprint

    superlattices
    molecular beam epitaxy
    photoluminescence
    sensors
    degradation
    metals
    crystals
    photometers
    cut-off
    luminescence
    optical properties
    sensitivity
    configurations
    energy

    ASJC Scopus subject areas

    • Condensed Matter Physics

    Cite this

    Ueno, J., Ogura, K., Ichiba, A., Katsuta, S., Kobayashi, M., Onomitsu, K., & Horikoshi, Y. (2006). MBE growth of ZnSe/MgCdS and ZnCdS/MgCdS superlattices for UV-A sensors. In Physica Status Solidi C: Conferences (4 ed., Vol. 3, pp. 1225-1228) https://doi.org/10.1002/pssc.200564728

    MBE growth of ZnSe/MgCdS and ZnCdS/MgCdS superlattices for UV-A sensors. / Ueno, J.; Ogura, K.; Ichiba, A.; Katsuta, S.; Kobayashi, Masakazu; Onomitsu, K.; Horikoshi, Y.

    Physica Status Solidi C: Conferences. Vol. 3 4. ed. 2006. p. 1225-1228.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Ueno, J, Ogura, K, Ichiba, A, Katsuta, S, Kobayashi, M, Onomitsu, K & Horikoshi, Y 2006, MBE growth of ZnSe/MgCdS and ZnCdS/MgCdS superlattices for UV-A sensors. in Physica Status Solidi C: Conferences. 4 edn, vol. 3, pp. 1225-1228, 12th International Conference on II-VI Compounds, Warsaw, Poland, 05/9/12. https://doi.org/10.1002/pssc.200564728
    Ueno J, Ogura K, Ichiba A, Katsuta S, Kobayashi M, Onomitsu K et al. MBE growth of ZnSe/MgCdS and ZnCdS/MgCdS superlattices for UV-A sensors. In Physica Status Solidi C: Conferences. 4 ed. Vol. 3. 2006. p. 1225-1228 https://doi.org/10.1002/pssc.200564728
    Ueno, J. ; Ogura, K. ; Ichiba, A. ; Katsuta, S. ; Kobayashi, Masakazu ; Onomitsu, K. ; Horikoshi, Y. / MBE growth of ZnSe/MgCdS and ZnCdS/MgCdS superlattices for UV-A sensors. Physica Status Solidi C: Conferences. Vol. 3 4. ed. 2006. pp. 1225-1228
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    abstract = "ZnSe/MgCdS and ZnCdS/MgCdS superlattices were grown on semi insulating (001) oriented GaAs substrates by molecular beam epitaxy (MBE). The crystal quality and optical properties were examined for both superlattices. The observed photoluminescence (PL) peak intensity of ZnCdS/MgCdS was much stronger than that of ZnSe/MgCdS while ZnSe/MgCdS showed sharper luminescence line width. The PL peak energy position was compared with the theoretical value derived from the Kronig-Penny model. The degradation of crystal quality was observed by increasing Mg content in MgCdS layer and drastic PL property degradation was observed when the Mg content in the layer exceeded a certain value. Two superlattices were applied to the UV-A sensor of the metal-semiconductor-metal (MSM) configuration. Both photodetectors exhibited a high sensitivity in the UV-A region with a sharp cut-off in the visible wave-length region; the ON-OFF ratio of sensor was about 103 for both structures.",
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    AU - Ichiba, A.

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    AU - Kobayashi, Masakazu

    AU - Onomitsu, K.

    AU - Horikoshi, Y.

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    AB - ZnSe/MgCdS and ZnCdS/MgCdS superlattices were grown on semi insulating (001) oriented GaAs substrates by molecular beam epitaxy (MBE). The crystal quality and optical properties were examined for both superlattices. The observed photoluminescence (PL) peak intensity of ZnCdS/MgCdS was much stronger than that of ZnSe/MgCdS while ZnSe/MgCdS showed sharper luminescence line width. The PL peak energy position was compared with the theoretical value derived from the Kronig-Penny model. The degradation of crystal quality was observed by increasing Mg content in MgCdS layer and drastic PL property degradation was observed when the Mg content in the layer exceeded a certain value. Two superlattices were applied to the UV-A sensor of the metal-semiconductor-metal (MSM) configuration. Both photodetectors exhibited a high sensitivity in the UV-A region with a sharp cut-off in the visible wave-length region; the ON-OFF ratio of sensor was about 103 for both structures.

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