MBE of wide bandgap II-VI compounds

R. L. Gunshor, Masakazu Kobayashi, L. A. Kolodziejski, N. Otsuka, A. V. Nurmikko

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

A pseudomorphic epilayer/epilayer heterojunction consisting of ZnTe on AlSb, having potential for the development of novel visible light emitting injection devices, has been grown by MBE. A variety of microstructural and optical evaluation techniques have provided evidence of high structural quality. The nonequilibrium growth capability of the MBE technique has enabled the growth of heterostructures incorporating a previously hypothetical widegap magnetic semiconductor, the zincblende phase of MnTe. Electron diffraction measurements of cross-sectional samples reveal only zincblende phases. Double barrier structures incorporating zincblende MnTe are found to exhibit 2D electron and hole confinement in CdTe and ZnTe quantum well layers, and serve to confirm the zincblende MnTe bandgap at 3.2 eV.

Original languageEnglish
Pages (from-to)390-398
Number of pages9
JournalJournal of Crystal Growth
Volume99
Issue number1-4
DOIs
Publication statusPublished - 1990
Externally publishedYes

Fingerprint

Epilayers
zincblende
Molecular beam epitaxy
Heterojunctions
Energy gap
Magnetic semiconductors
Electron diffraction
Semiconductor quantum wells
Electrons
heterojunctions
electron diffraction
quantum wells
injection
evaluation
electrons

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Gunshor, R. L., Kobayashi, M., Kolodziejski, L. A., Otsuka, N., & Nurmikko, A. V. (1990). MBE of wide bandgap II-VI compounds. Journal of Crystal Growth, 99(1-4), 390-398. https://doi.org/10.1016/0022-0248(90)90550-5

MBE of wide bandgap II-VI compounds. / Gunshor, R. L.; Kobayashi, Masakazu; Kolodziejski, L. A.; Otsuka, N.; Nurmikko, A. V.

In: Journal of Crystal Growth, Vol. 99, No. 1-4, 1990, p. 390-398.

Research output: Contribution to journalArticle

Gunshor, RL, Kobayashi, M, Kolodziejski, LA, Otsuka, N & Nurmikko, AV 1990, 'MBE of wide bandgap II-VI compounds', Journal of Crystal Growth, vol. 99, no. 1-4, pp. 390-398. https://doi.org/10.1016/0022-0248(90)90550-5
Gunshor RL, Kobayashi M, Kolodziejski LA, Otsuka N, Nurmikko AV. MBE of wide bandgap II-VI compounds. Journal of Crystal Growth. 1990;99(1-4):390-398. https://doi.org/10.1016/0022-0248(90)90550-5
Gunshor, R. L. ; Kobayashi, Masakazu ; Kolodziejski, L. A. ; Otsuka, N. ; Nurmikko, A. V. / MBE of wide bandgap II-VI compounds. In: Journal of Crystal Growth. 1990 ; Vol. 99, No. 1-4. pp. 390-398.
@article{b9b8abb3ae19490e861adf7e3a78c4b0,
title = "MBE of wide bandgap II-VI compounds",
abstract = "A pseudomorphic epilayer/epilayer heterojunction consisting of ZnTe on AlSb, having potential for the development of novel visible light emitting injection devices, has been grown by MBE. A variety of microstructural and optical evaluation techniques have provided evidence of high structural quality. The nonequilibrium growth capability of the MBE technique has enabled the growth of heterostructures incorporating a previously hypothetical widegap magnetic semiconductor, the zincblende phase of MnTe. Electron diffraction measurements of cross-sectional samples reveal only zincblende phases. Double barrier structures incorporating zincblende MnTe are found to exhibit 2D electron and hole confinement in CdTe and ZnTe quantum well layers, and serve to confirm the zincblende MnTe bandgap at 3.2 eV.",
author = "Gunshor, {R. L.} and Masakazu Kobayashi and Kolodziejski, {L. A.} and N. Otsuka and Nurmikko, {A. V.}",
year = "1990",
doi = "10.1016/0022-0248(90)90550-5",
language = "English",
volume = "99",
pages = "390--398",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "1-4",

}

TY - JOUR

T1 - MBE of wide bandgap II-VI compounds

AU - Gunshor, R. L.

AU - Kobayashi, Masakazu

AU - Kolodziejski, L. A.

AU - Otsuka, N.

AU - Nurmikko, A. V.

PY - 1990

Y1 - 1990

N2 - A pseudomorphic epilayer/epilayer heterojunction consisting of ZnTe on AlSb, having potential for the development of novel visible light emitting injection devices, has been grown by MBE. A variety of microstructural and optical evaluation techniques have provided evidence of high structural quality. The nonequilibrium growth capability of the MBE technique has enabled the growth of heterostructures incorporating a previously hypothetical widegap magnetic semiconductor, the zincblende phase of MnTe. Electron diffraction measurements of cross-sectional samples reveal only zincblende phases. Double barrier structures incorporating zincblende MnTe are found to exhibit 2D electron and hole confinement in CdTe and ZnTe quantum well layers, and serve to confirm the zincblende MnTe bandgap at 3.2 eV.

AB - A pseudomorphic epilayer/epilayer heterojunction consisting of ZnTe on AlSb, having potential for the development of novel visible light emitting injection devices, has been grown by MBE. A variety of microstructural and optical evaluation techniques have provided evidence of high structural quality. The nonequilibrium growth capability of the MBE technique has enabled the growth of heterostructures incorporating a previously hypothetical widegap magnetic semiconductor, the zincblende phase of MnTe. Electron diffraction measurements of cross-sectional samples reveal only zincblende phases. Double barrier structures incorporating zincblende MnTe are found to exhibit 2D electron and hole confinement in CdTe and ZnTe quantum well layers, and serve to confirm the zincblende MnTe bandgap at 3.2 eV.

UR - http://www.scopus.com/inward/record.url?scp=0025234109&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0025234109&partnerID=8YFLogxK

U2 - 10.1016/0022-0248(90)90550-5

DO - 10.1016/0022-0248(90)90550-5

M3 - Article

AN - SCOPUS:0025234109

VL - 99

SP - 390

EP - 398

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 1-4

ER -