MBE of wide bandgap II-VI compounds

R. L. Gunshor, Masakazu Kobayashi, L. A. Kolodziejski, N. Otsuka, A. V. Nurmikko

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Abstract

A pseudomorphic epilayer/epilayer heterojunction consisting of ZnTe on AlSb, having potential for the development of novel visible light emitting injection devices, has been grown by MBE. A variety of microstructural and optical evaluation techniques have provided evidence of high structural quality. The nonequilibrium growth capability of the MBE technique has enabled the growth of heterostructures incorporating a previously hypothetical widegap magnetic semiconductor, the zincblende phase of MnTe. Electron diffraction measurements of cross-sectional samples reveal only zincblende phases. Double barrier structures incorporating zincblende MnTe are found to exhibit 2D electron and hole confinement in CdTe and ZnTe quantum well layers, and serve to confirm the zincblende MnTe bandgap at 3.2 eV.

Original languageEnglish
Pages (from-to)390-398
Number of pages9
JournalJournal of Crystal Growth
Volume99
Issue number1-4
DOIs
Publication statusPublished - 1990
Externally publishedYes

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ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Gunshor, R. L., Kobayashi, M., Kolodziejski, L. A., Otsuka, N., & Nurmikko, A. V. (1990). MBE of wide bandgap II-VI compounds. Journal of Crystal Growth, 99(1-4), 390-398. https://doi.org/10.1016/0022-0248(90)90550-5