Measurement of changes in resistance of a Ag2+δ S nano-island on removal of dopant δ-Ag atoms

Nozomi Mishima, Tohru Tsuruoka, Tsuyoshi Hasegawa

Research output: Contribution to journalArticlepeer-review

Abstract

Changes in the resistance of a Ag2+δ S nano-island, in which non-stoichiometric δ-Ag atoms work as a dopant in an n-type semiconductor, was induced by electrochemical removal of the dopant δ-Ag atoms using conductive-atomic force microscopy. The removed Ag atoms grew a Ag nanowire on a nano-island, the height of which corresponded to the measured resistance. Conductance (1/resistance) linearly decreased as the height of a Ag nanowire increased, in accordance with the theory of semiconductor conductivity. The technique has the potential for the dynamic control of conductance in nanostructures post-fabrication.

Original languageEnglish
Article numberSE1001
JournalJapanese journal of applied physics
Volume60
Issue numberSE
DOIs
Publication statusPublished - 2021 Apr 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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