TY - JOUR
T1 - Measurement of changes in resistance of a Ag2+δ S nano-island on removal of dopant δ-Ag atoms
AU - Mishima, Nozomi
AU - Tsuruoka, Tohru
AU - Hasegawa, Tsuyoshi
N1 - Publisher Copyright:
© 2021 The Japan Society of Applied Physics.
PY - 2021/4/1
Y1 - 2021/4/1
N2 - Changes in the resistance of a Ag2+δ S nano-island, in which non-stoichiometric δ-Ag atoms work as a dopant in an n-type semiconductor, was induced by electrochemical removal of the dopant δ-Ag atoms using conductive-atomic force microscopy. The removed Ag atoms grew a Ag nanowire on a nano-island, the height of which corresponded to the measured resistance. Conductance (1/resistance) linearly decreased as the height of a Ag nanowire increased, in accordance with the theory of semiconductor conductivity. The technique has the potential for the dynamic control of conductance in nanostructures post-fabrication.
AB - Changes in the resistance of a Ag2+δ S nano-island, in which non-stoichiometric δ-Ag atoms work as a dopant in an n-type semiconductor, was induced by electrochemical removal of the dopant δ-Ag atoms using conductive-atomic force microscopy. The removed Ag atoms grew a Ag nanowire on a nano-island, the height of which corresponded to the measured resistance. Conductance (1/resistance) linearly decreased as the height of a Ag nanowire increased, in accordance with the theory of semiconductor conductivity. The technique has the potential for the dynamic control of conductance in nanostructures post-fabrication.
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U2 - 10.35848/1347-4065/abefab
DO - 10.35848/1347-4065/abefab
M3 - Article
AN - SCOPUS:85103828501
SN - 0021-4922
VL - 60
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - SE
M1 - SE1001
ER -