Abstract
In-plane directional electric property measurement in the semiconductors via electromechanical coupling is proposed. To estimate the properties in the crystal with less than 1 Ω·m (which is general value in intrinsic wide band-gap semiconductors), in-plane directional GHz bulk acoustic wave velocities and attenuations in a ZnO crystal have been theoretically and experimentally investigated, using Brillouin scattering method. Distribution of electric properties in the crystal, also separately measured by the electrode, has been clearly detected by the acoustic velocity distribution measurement.
| Original language | English |
|---|---|
| Title of host publication | Proceedings - IEEE Ultrasonics Symposium |
| DOIs | |
| Publication status | Published - 2009 |
| Externally published | Yes |
| Event | 2009 IEEE International Ultrasonics Symposium, IUS 2009 - Rome, Italy Duration: 2009 Sep 20 → 2009 Sep 23 |
Other
| Other | 2009 IEEE International Ultrasonics Symposium, IUS 2009 |
|---|---|
| Country | Italy |
| City | Rome |
| Period | 09/9/20 → 09/9/23 |
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Keywords
- Acousto-electric effect
- Brillouin scattering
- Component
- In-plane electric properties
- Piezoelectric semiconductors
- ZnO
ASJC Scopus subject areas
- Acoustics and Ultrasonics
Cite this
Measurement of electric properties in a ZnO single crystal via electromechanical coupling using Brillouin scattering method. / Yanagitani, Takahiko; Sano, Hiroyuki; Matsukawa, Mami.
Proceedings - IEEE Ultrasonics Symposium. 2009. 5441851.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
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TY - GEN
T1 - Measurement of electric properties in a ZnO single crystal via electromechanical coupling using Brillouin scattering method
AU - Yanagitani, Takahiko
AU - Sano, Hiroyuki
AU - Matsukawa, Mami
PY - 2009
Y1 - 2009
N2 - In-plane directional electric property measurement in the semiconductors via electromechanical coupling is proposed. To estimate the properties in the crystal with less than 1 Ω·m (which is general value in intrinsic wide band-gap semiconductors), in-plane directional GHz bulk acoustic wave velocities and attenuations in a ZnO crystal have been theoretically and experimentally investigated, using Brillouin scattering method. Distribution of electric properties in the crystal, also separately measured by the electrode, has been clearly detected by the acoustic velocity distribution measurement.
AB - In-plane directional electric property measurement in the semiconductors via electromechanical coupling is proposed. To estimate the properties in the crystal with less than 1 Ω·m (which is general value in intrinsic wide band-gap semiconductors), in-plane directional GHz bulk acoustic wave velocities and attenuations in a ZnO crystal have been theoretically and experimentally investigated, using Brillouin scattering method. Distribution of electric properties in the crystal, also separately measured by the electrode, has been clearly detected by the acoustic velocity distribution measurement.
KW - Acousto-electric effect
KW - Brillouin scattering
KW - Component
KW - In-plane electric properties
KW - Piezoelectric semiconductors
KW - ZnO
UR - http://www.scopus.com/inward/record.url?scp=77952869966&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77952869966&partnerID=8YFLogxK
U2 - 10.1109/ULTSYM.2009.5441851
DO - 10.1109/ULTSYM.2009.5441851
M3 - Conference contribution
SN - 9781424443895
BT - Proceedings - IEEE Ultrasonics Symposium
ER -