Abstract
In-plane directional electric property measurement in the semiconductors via electromechanical coupling is proposed. To estimate the properties in the crystal with less than 1 Ω·m (which is general value in intrinsic wide band-gap semiconductors), in-plane directional GHz bulk acoustic wave velocities and attenuations in a ZnO crystal have been theoretically and experimentally investigated, using Brillouin scattering method. Distribution of electric properties in the crystal, also separately measured by the electrode, has been clearly detected by the acoustic velocity distribution measurement.
| Original language | English |
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| Title of host publication | 2009 IEEE International Ultrasonics Symposium and Short Courses, IUS 2009 |
| DOIs | |
| Publication status | Published - 2009 Dec 1 |
| Externally published | Yes |
| Event | 2009 IEEE International Ultrasonics Symposium, IUS 2009 - Rome, Italy Duration: 2009 Sep 20 → 2009 Sep 23 |
Publication series
| Name | Proceedings - IEEE Ultrasonics Symposium |
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| ISSN (Print) | 1051-0117 |
Other
| Other | 2009 IEEE International Ultrasonics Symposium, IUS 2009 |
|---|---|
| Country | Italy |
| City | Rome |
| Period | 09/9/20 → 09/9/23 |
Keywords
- Acousto-electric effect
- Brillouin scattering
- Component
- In-plane electric properties
- Piezoelectric semiconductors
- ZnO
ASJC Scopus subject areas
- Acoustics and Ultrasonics
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Cite this
Yanagitani, T., Sano, H., & Matsukawa, M. (2009). Measurement of electric properties in a ZnO single crystal via electromechanical coupling using Brillouin scattering method. In 2009 IEEE International Ultrasonics Symposium and Short Courses, IUS 2009 [5441851] (Proceedings - IEEE Ultrasonics Symposium). https://doi.org/10.1109/ULTSYM.2009.5441851