Measurement of electrical properties of materials under the oxide layer by microwave-AFM probe

Lan Zhang, Yang Ju, Atsushi Hosoi, Akifumi Fujimoto

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The capability of a new AFM-based apparatus named microwave atomic force microscope (M-AFM) which can measure the topography and electrical information of samples simultaneously was investigated. Some special samples with different thicknesses of dielectric film (SiO2) which plays the role of oxide layer creating on the material surface were fabricated. The measurement of electrical properties of materials under the oxide layer by the M-AFM was studied. The results indicate that the M-AFM can lead the microwave signal penetrate the oxide film (SiO2) with a limited thickness of 60 nm and obtain the electrical information of underlying materials.

Original languageEnglish
Title of host publicationDTIP 2011 - Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS
Pages334-338
Number of pages5
Publication statusPublished - 2011
Externally publishedYes
Event2011 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS, DTIP 2011 - Aix-en-Provence
Duration: 2011 May 112011 May 13

Other

Other2011 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS, DTIP 2011
CityAix-en-Provence
Period11/5/1111/5/13

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ASJC Scopus subject areas

  • Hardware and Architecture

Cite this

Zhang, L., Ju, Y., Hosoi, A., & Fujimoto, A. (2011). Measurement of electrical properties of materials under the oxide layer by microwave-AFM probe. In DTIP 2011 - Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS (pp. 334-338). [6108014]