Measurement of mismatch factor and noise of SRAM PUF using small bias voltage

Ziyang Cui, Baikun Zheng, Yanhao Piao, Shiyu Liu, Ronghao Xie, Hirofumi Shinohara

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

Mismatch factor of SRAM bit cell and noise factor that affects its power up state are measured using 256 bit SRAM PUF test structure with bias voltage inputs. Probability of power up state is used to extract a mismatch factor normalized by σn (sigma noise voltage). By combining shifted bias voltages and repeat evaluation, whole 256 bit mismatch factors from real SRAM with small modification are obtained. According to the measurement data, it is confirmed that both noise factor and mismatch factor follow Gaussian distribution within a range of ±3.5σ and ± 2.9σ, respectively.

Original languageEnglish
Title of host publication2017 International Conference of Microelectronic Test Structures, ICMTS 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509036158
DOIs
Publication statusPublished - 2017 Jun 20
Event2017 International Conference of Microelectronic Test Structures, ICMTS 2017 - Grenoble, France
Duration: 2017 Mar 272017 Mar 30

Other

Other2017 International Conference of Microelectronic Test Structures, ICMTS 2017
CountryFrance
CityGrenoble
Period17/3/2717/3/30

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • Cite this

    Cui, Z., Zheng, B., Piao, Y., Liu, S., Xie, R., & Shinohara, H. (2017). Measurement of mismatch factor and noise of SRAM PUF using small bias voltage. In 2017 International Conference of Microelectronic Test Structures, ICMTS 2017 [7954264] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICMTS.2017.7954264