Measurement of mismatch factor and noise of SRAM PUF using small bias voltage

Ziyang Cui; Baikun Zheng; Yanhao Piao; Shiyu Liu; Ronghao Xie; Hirofumi Shinohara

doi:10.1109/ICMTS.2017.7954264

Measurement of mismatch factor and noise of SRAM PUF using small bias voltage

Ziyang Cui, Baikun Zheng, Yanhao Piao, Shiyu Liu, Ronghao Xie, Hirofumi Shinohara

Graduate School of Information, Production and Systems

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Citations (Scopus)

Abstract

Mismatch factor of SRAM bit cell and noise factor that affects its power up state are measured using 256 bit SRAM PUF test structure with bias voltage inputs. Probability of power up state is used to extract a mismatch factor normalized by σ_n (sigma noise voltage). By combining shifted bias voltages and repeat evaluation, whole 256 bit mismatch factors from real SRAM with small modification are obtained. According to the measurement data, it is confirmed that both noise factor and mismatch factor follow Gaussian distribution within a range of ±3.5σ and ± 2.9σ, respectively.

Original language	English
Title of host publication	2017 International Conference of Microelectronic Test Structures, ICMTS 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781509036158
DOIs	https://doi.org/10.1109/ICMTS.2017.7954264
Publication status	Published - 2017 Jun 20
Event	2017 International Conference of Microelectronic Test Structures, ICMTS 2017 - Grenoble, France Duration: 2017 Mar 27 → 2017 Mar 30

Other

Other	2017 International Conference of Microelectronic Test Structures, ICMTS 2017
Country	France
City	Grenoble
Period	17/3/27 → 17/3/30

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1109/ICMTS.2017.7954264

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Measurement of mismatch factor and noise of SRAM PUF using small bias voltage. / Cui, Ziyang; Zheng, Baikun; Piao, Yanhao; Liu, Shiyu; Xie, Ronghao; Shinohara, Hirofumi.

2017 International Conference of Microelectronic Test Structures, ICMTS 2017. Institute of Electrical and Electronics Engineers Inc., 2017. 7954264.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Cui, Z, Zheng, B, Piao, Y, Liu, S, Xie, R & Shinohara, H 2017, Measurement of mismatch factor and noise of SRAM PUF using small bias voltage. in 2017 International Conference of Microelectronic Test Structures, ICMTS 2017., 7954264, Institute of Electrical and Electronics Engineers Inc., 2017 International Conference of Microelectronic Test Structures, ICMTS 2017, Grenoble, France, 17/3/27. https://doi.org/10.1109/ICMTS.2017.7954264

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abstract = "Mismatch factor of SRAM bit cell and noise factor that affects its power up state are measured using 256 bit SRAM PUF test structure with bias voltage inputs. Probability of power up state is used to extract a mismatch factor normalized by σn (sigma noise voltage). By combining shifted bias voltages and repeat evaluation, whole 256 bit mismatch factors from real SRAM with small modification are obtained. According to the measurement data, it is confirmed that both noise factor and mismatch factor follow Gaussian distribution within a range of ±3.5σ and ± 2.9σ, respectively.",

author = "Ziyang Cui and Baikun Zheng and Yanhao Piao and Shiyu Liu and Ronghao Xie and Hirofumi Shinohara",

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AU - Cui, Ziyang

AU - Zheng, Baikun

AU - Piao, Yanhao

AU - Liu, Shiyu

AU - Xie, Ronghao

AU - Shinohara, Hirofumi

PY - 2017/6/20

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N2 - Mismatch factor of SRAM bit cell and noise factor that affects its power up state are measured using 256 bit SRAM PUF test structure with bias voltage inputs. Probability of power up state is used to extract a mismatch factor normalized by σn (sigma noise voltage). By combining shifted bias voltages and repeat evaluation, whole 256 bit mismatch factors from real SRAM with small modification are obtained. According to the measurement data, it is confirmed that both noise factor and mismatch factor follow Gaussian distribution within a range of ±3.5σ and ± 2.9σ, respectively.

AB - Mismatch factor of SRAM bit cell and noise factor that affects its power up state are measured using 256 bit SRAM PUF test structure with bias voltage inputs. Probability of power up state is used to extract a mismatch factor normalized by σn (sigma noise voltage). By combining shifted bias voltages and repeat evaluation, whole 256 bit mismatch factors from real SRAM with small modification are obtained. According to the measurement data, it is confirmed that both noise factor and mismatch factor follow Gaussian distribution within a range of ±3.5σ and ± 2.9σ, respectively.

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