Measurement of static random access memory power-up state using an addressable cell array test structure

Kiyoshi Takeuchi, Tomoko Mizutani, Hirofumi Shinohara, Takuya Saraya, Masaharu Kobayashi, Toshiro Hiramoto

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Abstract

The data stored in a static random access memory (SRAM) immediately after power-up is of practical interest for some applications, such as SRAM physical unclonable functions. In this paper, measurements of SRAM cell power-up state (i.e., whether the cell is storing 0 or 1 after the power supply is turned on) using an addressable cell array test structure are reported. The test structure provides direct access to individual transistor characteristics of many SRAM cells, which would facilitate the characterization of SRAM power-up behavior. Methods and considerations necessary for reliable and stable power-up state characterization using the test structure will be discussed and demonstrated.

Original languageEnglish
Article number7895199
Pages (from-to)209-215
Number of pages7
JournalIEEE Transactions on Semiconductor Manufacturing
Volume30
Issue number3
DOIs
Publication statusPublished - 2017 Aug 1

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Keywords

  • Physical unclonable function (PUF)
  • SRAM
  • test structure

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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