Measurements of Heat of Formation of GaP, InP, GaAs, InAs, GaSb and InSb

Katsunori Yamaguchi, Yoichi Takeda, Kazuo Kameda, Kimio Itagaki

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40 Citations (Scopus)


The heats of formation of six III-V compounds of GaP, InP, GaAs, InAs, GaSb and InSb were determined at 773 K from the heats of dissolution of these compounds and the components in a liquid tin solvent, using a Calvet-type twin solution calorimeter. The standard heats of formation at 298.15 K, ΔH° f, 298.15, are: GaP (P: red) -103.2±1.7 kJ/mol, InP (P: red) −70.2±4.4 kJ/mol, GaAs −87.7±0.5 kJ/mol, InAs − 60.0± 1.0 kJ/mol, GaSb −45.9±0.3 kJ/mol and InSb −34.1 ±0.6 kJ/mol. A relation was found between the heats of formation and the bond formation energy, and the overlap interaction in the cohesive energies of these compounds. ΔH° f, 298.15 decreased linearly with increasing bond formation energy and overlap interaction energy per bond.

Original languageEnglish
Pages (from-to)596-602
Number of pages7
JournalMaterials Transactions, JIM
Issue number9
Publication statusPublished - 1994
Externally publishedYes


  • GaAs
  • GaP
  • GaSb
  • InAs
  • InP
  • InSb
  • heat of dissolution
  • heat of formation
  • solution calorimeter

ASJC Scopus subject areas

  • Engineering(all)


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