Measurements of Heat of Formation of GaP, InP, GaAs, InAs, GaSb and InSb

Katsunori Yamaguchi, Yoichi Takeda, Kazuo Kameda, Kimio Itagaki

Research output: Contribution to journalArticle

28 Citations (Scopus)

Abstract

The heats of formation of six III-V compounds of GaP, InP, GaAs, InAs, GaSb and InSb were determined at 773 K from the heats of dissolution of these compounds and the components in a liquid tin solvent, using a Calvet-type twin solution calorimeter. The standard heats of formation at 298.15 K, ΔH° f, 298.15, are: GaP (P: red) -103.2±1.7 kJ/mol, InP (P: red) −70.2±4.4 kJ/mol, GaAs −87.7±0.5 kJ/mol, InAs − 60.0± 1.0 kJ/mol, GaSb −45.9±0.3 kJ/mol and InSb −34.1 ±0.6 kJ/mol. A relation was found between the heats of formation and the bond formation energy, and the overlap interaction in the cohesive energies of these compounds. ΔH° f, 298.15 decreased linearly with increasing bond formation energy and overlap interaction energy per bond.

Original languageEnglish
Pages (from-to)596-602
Number of pages7
Journalmaterials transactions, jim
Volume35
Issue number9
DOIs
Publication statusPublished - 1994
Externally publishedYes

Fingerprint

heat of formation
energy of formation
calorimeters
Tin
tin
dissolving
Calorimeters
interactions
heat
Dissolution
energy
liquids
Hot Temperature
gallium arsenide
indium arsenide
Liquids

Keywords

  • GaAs
  • GaP
  • GaSb
  • heat of dissolution
  • heat of formation
  • InAs
  • InP
  • InSb
  • solution calorimeter

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Measurements of Heat of Formation of GaP, InP, GaAs, InAs, GaSb and InSb. / Yamaguchi, Katsunori; Takeda, Yoichi; Kameda, Kazuo; Itagaki, Kimio.

In: materials transactions, jim, Vol. 35, No. 9, 1994, p. 596-602.

Research output: Contribution to journalArticle

Yamaguchi, Katsunori ; Takeda, Yoichi ; Kameda, Kazuo ; Itagaki, Kimio. / Measurements of Heat of Formation of GaP, InP, GaAs, InAs, GaSb and InSb. In: materials transactions, jim. 1994 ; Vol. 35, No. 9. pp. 596-602.
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AU - Itagaki, Kimio

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AB - The heats of formation of six III-V compounds of GaP, InP, GaAs, InAs, GaSb and InSb were determined at 773 K from the heats of dissolution of these compounds and the components in a liquid tin solvent, using a Calvet-type twin solution calorimeter. The standard heats of formation at 298.15 K, ΔH° f, 298.15, are: GaP (P: red) -103.2±1.7 kJ/mol, InP (P: red) −70.2±4.4 kJ/mol, GaAs −87.7±0.5 kJ/mol, InAs − 60.0± 1.0 kJ/mol, GaSb −45.9±0.3 kJ/mol and InSb −34.1 ±0.6 kJ/mol. A relation was found between the heats of formation and the bond formation energy, and the overlap interaction in the cohesive energies of these compounds. ΔH° f, 298.15 decreased linearly with increasing bond formation energy and overlap interaction energy per bond.

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