Mechanism analysis of interrupted growth of single-walled carbon nanotube arrays

Takayuki Iwasaki, John Robertson, Hiroshi Kawarada

    Research output: Contribution to journal › Article

    39 Citations (Scopus)

    Abstract

    We investigated the growth mechanism of layered single-walled carbon nanotube (SWNT) mats by a cutting method. Transmission electron microscope observations revealed that new SWNTs grown below first grown SWNTs also have caps at their tips. Raman spectroscopy suggests that the SWNTs in each layer have the same chirality distribution. This growth method might be a way to prove a factor of chirality selection of SWNTs.

    Original languageEnglish
    Pages (from-to)886-890
    Number of pages5
    JournalNano Letters
    Volume8
    Issue number3
    DOIs
    Publication statusPublished - 2008 Mar

    Fingerprint

    Chirality
    Single-walled carbon nanotubes (SWCN)
    chirality
    carbon nanotubes
    caps
    Raman spectroscopy
    Electron microscopes
    electron microscopes

    ASJC Scopus subject areas

    • Condensed Matter Physics
    • Bioengineering
    • Chemistry(all)
    • Materials Science(all)
    • Mechanical Engineering

    Cite this

    Mechanism analysis of interrupted growth of single-walled carbon nanotube arrays. / Iwasaki, Takayuki; Robertson, John; Kawarada, Hiroshi.

    In: Nano Letters, Vol. 8, No. 3, 03.2008, p. 886-890.

    Research output: Contribution to journal › Article

    Iwasaki, T, Robertson, J & Kawarada, H 2008, 'Mechanism analysis of interrupted growth of single-walled carbon nanotube arrays', Nano Letters, vol. 8, no. 3, pp. 886-890. https://doi.org/10.1021/nl073119f
    Iwasaki T, Robertson J, Kawarada H. Mechanism analysis of interrupted growth of single-walled carbon nanotube arrays. Nano Letters. 2008 Mar;8(3):886-890. https://doi.org/10.1021/nl073119f
    Iwasaki, Takayuki ; Robertson, John ; Kawarada, Hiroshi. / Mechanism analysis of interrupted growth of single-walled carbon nanotube arrays. In: Nano Letters. 2008 ; Vol. 8, No. 3. pp. 886-890.
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