Abstract
The origin of anomalously large p-n junction leakage current in Si is investigated. The leakage has strong electric field dependence and weak temperature dependence, and therefore cannot be explained by either generation-recombination current or diffusion current. It may be explained by the local Zener effect at local enhancement of the electric field around small precipitates in the depletion layer. Supposing a spherical precipitate, the electric field will be enhanced as much as 1.3 times for a SiO2 precipitate and 3 times for a metal precipitate. The leakage features are explained by the electric field dependence and the temperature dependence of the local Zener probability. A new approach to reduce the local Zener probability by controlling the profile of the electric field is proposed, and the validity of the approach is confirmed by direct experiment and by improvement in the refresh operation of DRAM cells.
| Original language | English |
|---|---|
| Pages (from-to) | 1404-1412 |
| Number of pages | 9 |
| Journal | IEEE Transactions on Electron Devices |
| Volume | 42 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - 1995 Aug |
| Externally published | Yes |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Physics and Astronomy (miscellaneous)
Cite this
Mechanism and a reduction technique for large reverse leakage current in p-n junctions. / Ohyu, Kiyonori; Ohkura, Makoto; Hiraiwa, Atsushi; Watanabe, Kozo.
In: IEEE Transactions on Electron Devices, Vol. 42, No. 8, 08.1995, p. 1404-1412.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Mechanism and a reduction technique for large reverse leakage current in p-n junctions
AU - Ohyu, Kiyonori
AU - Ohkura, Makoto
AU - Hiraiwa, Atsushi
AU - Watanabe, Kozo
PY - 1995/8
Y1 - 1995/8
N2 - The origin of anomalously large p-n junction leakage current in Si is investigated. The leakage has strong electric field dependence and weak temperature dependence, and therefore cannot be explained by either generation-recombination current or diffusion current. It may be explained by the local Zener effect at local enhancement of the electric field around small precipitates in the depletion layer. Supposing a spherical precipitate, the electric field will be enhanced as much as 1.3 times for a SiO2 precipitate and 3 times for a metal precipitate. The leakage features are explained by the electric field dependence and the temperature dependence of the local Zener probability. A new approach to reduce the local Zener probability by controlling the profile of the electric field is proposed, and the validity of the approach is confirmed by direct experiment and by improvement in the refresh operation of DRAM cells.
AB - The origin of anomalously large p-n junction leakage current in Si is investigated. The leakage has strong electric field dependence and weak temperature dependence, and therefore cannot be explained by either generation-recombination current or diffusion current. It may be explained by the local Zener effect at local enhancement of the electric field around small precipitates in the depletion layer. Supposing a spherical precipitate, the electric field will be enhanced as much as 1.3 times for a SiO2 precipitate and 3 times for a metal precipitate. The leakage features are explained by the electric field dependence and the temperature dependence of the local Zener probability. A new approach to reduce the local Zener probability by controlling the profile of the electric field is proposed, and the validity of the approach is confirmed by direct experiment and by improvement in the refresh operation of DRAM cells.
UR - http://www.scopus.com/inward/record.url?scp=0029358405&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0029358405&partnerID=8YFLogxK
U2 - 10.1109/16.398655
DO - 10.1109/16.398655
M3 - Article
AN - SCOPUS:0029358405
VL - 42
SP - 1404
EP - 1412
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
SN - 0018-9383
IS - 8
ER -